KA5M0380 [FAIRCHILD]
SPS consist of high voltage power SenseFET and current mode PWM IC; SPS包括高压功率值SenseFET和电流模式PWM IC
| 型号： | KA5M0380 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | SPS consist of high voltage power SenseFET and current mode PWM IC |
| 文件： | 总14页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA5H0380R/KA5M0380R/KA5L0380R
SPS
Features
Description
• Precision fixed operating frequency (100/67/50kHz)
• Low start-up current(typ. 100uA)
• Pulse by pulse current limiting
• Over current protection
• Over voltage protecton (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
IC. Included PWM controller features integrated fixed fre-
quency oscillator, under voltage lock-out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal
shutdown protection, over voltage protection, and tempera-
ture compensated precision current sources for loopcompen-
sation and fault protection circuitry. Compared to discrete
MOSFET and PWM controller or RCC solution, a SPS can
reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reli-
ability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
• Internal high voltage sense FET
• Auto-restart mode
TO-220F-4L
1. GND 2. DRAIN 3. V
4. FB
CC
Internal Block Diagram
Vcc
DRAIN
INT ERNAL
BIAS
5V
Vref
SFET
UVLO
GOOD
LOGIC
OSC
9V
S
Q
5 uA
1 mA
R
_
FB
L.E.B
2.5R
1R
+
+
_
Rsens
S
GND
7.5V
Q
R
THERMAL S/D
+
_
POWER ON RESET
27V
Rev. .5.0
©2000 Fairchild Semiconductor International
KA5H0380R/KA5M0380R/KA5L0380R
Absolute Maximum Ratings
Characteristic
Symbol
VDSS
VDGR
VGS
Value
800
800
±30
12
Unit
V
Drain-source (GND) voltage (1)
Drain-Gate voltage (R =1MΩ)
V
GS
Gate-source (GND) voltage
Drain current pulsed (2)
V
IDM
A
DC
Single pulsed avalanche energy (3)
Avalanche current (4)
EAS
95
mJ
A
IAS
10
Continuous drain current (T =25°C)
ID
3.0
A
DC
A
DC
V
C
Continuous drain current (T =100°C)
ID
2.1
C
Supply voltage
VCC
30
Analog input voltage range
VFB
−0.3 to V
35
V
SD
PD (watt H/S)
Derating
TOPR
TSTG
W
W/°C
°C
Total power dissipation
0.28
Operating temperature
Storage temperature
−25 to +85
−55 to +150
°C
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, starting Tj=25°C
4. L=13µH, starting Tj=25°C
2
KA5H0380R/KA5M0380R/KA5L0380R
Electrical Characteristics (SFET part)
(Ta = 25°C unless otherwise specified)
Characteristic
Symbol
BV
Test condition
Min.
Typ. Max. Unit
DSS
Drain-source breakdown voltage
V
=0V, I =50µA
800
−
−
−
V
GS
D
V
V
=Max., Rating,
=0V
DS
GS
−
−
250
µA
Zero gate voltage drain current
I
DSS
V
V
=0.8Max., Rating,
DS
GS
−
1000
µA
=0V, T =125°C
C
Static drain-source on resistance (note)
Forward transconductance (note)
Input capacitance
R
V
V
=10V, I =0.5A
D
−
1.5
−
4
5
−
−
−
−
−
−
−
−
Ω
DS(ON)
GS
DS
g
=50V, I =0.5A
D
2.5
779
75.6
24.9
40
S
fs
C
iss
V
=0V, V =25V,
DS
GS
Output capacitance
Reverse transfer capacitance
Turn on delay time
C
−
pF
nS
oss
f=1MHz
C
−
rss
t
−
d(on)
V
=0.5BV , I =1.0A
DSS D
DD
(MOSFET switching
time are essentially
independent of
Rise time
t
−
95
r
Turn off delay time
t
−
150
60
d(off)
operating temperature)
Fall time
t
f
−
Total gate charge
(gate-source+gate-drain)
V
V
=10V, I =1.0A,
D
=0.5BV (MOSFET
DSS
GS
DS
Q
g
−
−
34
switching time are
essentially independent of
operating temperature)
nC
Gate-source charge
Q
Q
−
−
7.2
−
−
gs
Gate-drain (Miller) charge
12.1
gd
Note:
Pulse test: Pulse width < 300µS, duty < 2%
1
S = ---
R
3
KA5H0380R/KA5M0380R/KA5L0380R
Electrical Charcteristics (SFET part) (Continued)
(Ta = 25°C unless otherwise specified)
Characteristic
REFERENCE SECTION
Output voltage (1)
Symbol
Test condition
Min.
Typ. Max.
Unit
Vref
Ta=25°C
4.80
5.00
0.3
5.20
0.6
V
Temperature Stability (1)(2)
OSCILLATOR SECTION
Initial accuracy
Vref/∆T
−25°C≤Ta≤+85°C
−
mV/°C
F
OSC
F
OSC
F
OSC
KA5H0380R
KA5M0380R
KA5L0380R
90
61
45
−
100
67
110
73
kHz
kHz
kHz
%
Initial accuracy
Initial accuracy
50
55
Frequency change with temperature (2)
−25°C≤Ta≤+85°C
±5
±10
PWM SECTION
Maximum duty cycle
D
D
KA5H0380R
62
72
67
77
72
82
%
%
max
KA5M0380R
KA5L0380R
Maximum duty cycle
max
FEEDBACK SECTION
Feedback source current
Shutdown delay current
I
Ta=25°C, 0V<V <3V
fb
0.7
4
0.9
5
1.1
6
mA
FB
I
Ta=25°C, 5V≤V ≤V
fb SD
µA
delay
OVER CURRENT PROTECTION SECTION
Over current protection
UVLO SECTION
I
Max. inductor current
1.89
2.15
2.41
A
L(max)
Start threshold voltage
Minimum operating voltage
TOTAL STANDBY CURRENT SECTION
Start current
V
−
8.4
14
9
9.6
16
V
V
th(H)
V
After turn on
15
th(L)
I
V
V
=14V
<28
−
−
0.1
7
0.17
12
mA
mA
ST
CC
Operating supply current
(control part only)
I
OPR
CC
SHUTDOWN SECTION
Shutdown Feedback voltage
Thermal shutdown temperature (Tj) (1)
Over voltage protection
V
T
V >6.5V
fb
6.9
140
25
7.5
160
27
8.1
−
V
°C
V
SD
−
SD
V
V
>24V
CC
29
OVP
NOTE:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
4
KA5H0380R/KA5M0380R/KA5L0380R
Typical Performance Characteristics
1
1
10
10
V
GS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
0
0
10
10
150 oC
@Notes:
@ Notes:
25 oC
-25 oC
1. 300µs PulseTest
1. VDS = 30 V
2. TC = 25oC
2. 300µs PulseTest
-1
-1
10
10
0
1
10
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Thansfer Characteristics
Fig3. On-Resistance vs. Drain Current
8
7
6
5
4
3
2
1
0
10
Vgs=10V
Vgs=20V
1
25 oC
150 oC
@ Notes:
1. VGS = 0V
2. 300µs PulseTest
℃
@Note: Tj=25
0.1
0
1
2
3
4
0.4
0.6
0.8
1.0
VSD, Source-Drain Voltage [V]
ID,Drain Current
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
1000
C
iss = Cgs + Cgd (Cds = shorted)
10
900
800
700
600
500
400
300
200
100
0
V
DS=160V
Coss = Cds + Cgd
Crss = Cgd
V
DS=400V
8
6
4
2
0
V
DS=640V
C
iss
Coss
Crss
@Note: ID=3.0A
25
0
1
0
5
10
15
20
30
10
10
VDS, Drain-Source Voltage [V]
QG,Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
5
KA5H0380R/KA5M0380R/KA5L0380R
typical performance characteristics (continued)
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
1. VGS = 0V
2. ID = 250µA
@ Notes:
1. VGS = 10V
2. ID = 1.5 A
-50
0
50
100
150
-50
0
50
100
150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage vs. Temperature
Figure 8. On-Resistance vs. Temperature
2
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Operation in This Area
is Limited by R DS(on)
1
10
10
s
µ
100
s
µ
1 ms
10 ms
DC
0
10
@ Notes :
-1
10
1. T = 25 o
C
C
2. T = 150 o
C
J
3. Single Pulse
-2
10
1
2
3
10
10
10
40
60
80
100
120
140
TC, Case Temperature [oC]
VDS , Drain-Source Voltage [V]
Figure 9. Max. Safe Operating Area
Figure 10. Max. Drain Current vs. Case Temperature
100
D=0.5
@ Notes :
0.2
0.1
1. Zθ JC(t)=1.25 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*Zθ JC(t)
10-1
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
Figure 11. Thermal Response
6
KA5H0380R/KA5M0380R/KA5L0380R
typical performance characteristics (control part)
(These characteristic graphs are normalized at Ta = 25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
Ifb
1
0.95
0.9
Fosc
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 2. Feedback Source Current
Figure 1. Operating Frequency
1.1
1.2
1.15
1.1
1.05
Ipeak 1
1.05
Iop
0.95
0.9
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 4. Max Inductor Current
Figure 3. Operating Current
1.5
1.15
1.1
1.3
1.1
0.9
0.7
0.5
1.05
Istart
Vstart
1
0.95
0.9
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Figure 6. Start Threshold Voltage
Figure 5. Start up Current
7
KA5H0380R/KA5M0380R/KA5L0380R
typical performance characteristics (continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.15
1.1
1.15
1.1
1.05
1.05
Vstop 1
0.95
Dmax
1
0.95
0.9
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Figure 8. Maximum Duty Cycle
Figure 7. Stop Threshold Voltage
1.2
1.15
1.15
1.1
1.05
1.1
1.05
Vz
Vsd
1
0.95
0.9
1
0.95
0.9
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Figure 10. Shutdown Feedback Voltage
Figure 9. V
Zener Voltage
CC
1.15
1.2
1.15
1.1
1.05
1.1
1.05
Idelay
1
Vovp
1
0.95
0.9
0.95
0.9
0.85
0.8
0.85
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 12. Over Voltage Protection
Figure 11. Shutdown Delay Current
8
KA5H0380R/KA5M0380R/KA5L0380R
typical performance characteristics (continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.15
2.5
2
1.1
1.05
1.5
Vss
1
0.95
0.9
Rdson
1
0.5
0
0.85
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 14. Drain Source Turn-on Resistance
Figure13. Soft Start Voltage
9
KA5H0380R/KA5M0380R/KA5L0380R
Package Dimensions
TO-220F-4L
10
KA5H0380R/KA5M0380R/KA5L0380R
Package Dimensions (Continued)
TO-220F-4L (Forming)
11
KA5H0380R/KA5M0380R/KA5L0380R
Ordering Information
Product Number
Package
TO-220F-4L
Rating
Operating Temperature
KA5H0380R-TU
800V, 3A
-25°C to +85°C
KA5H0380R-YDTU TO-220F-4L(Forming)
KA5M0380R-TU TO-220F-4L
KA5M0380R-YDTU TO-220F-4L(Forming)
KA5L0380R-TU TO-220F-4L
800V, 3A
800V, 3A
-25°C to +85°C
-25°C to +85°C
KA5L0380R-YDTU TO-220F-4L(Forming)
TU : Non forming Type
YDTU :forming Type
12
KA5H0380R/KA5M0380R/KA5L0380R
13
KA5H0380R/KA5M0380R/KA5L0380R
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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2000 Fairchild Semiconductor International
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