KH104 [FAIRCHILD]

DC to 1.1GHz Linear Amplifier; DC到1.1GHz的线性放大器
KH104
型号: KH104
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

DC to 1.1GHz Linear Amplifier
DC到1.1GHz的线性放大器

放大器
文件: 总7页 (文件大小:242K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
www.fairchildsemi.com  
KH104  
DC to 1.1GHz Linear Amplifier  
Features  
General Description  
The KH104 linear amplifier represents a significant  
advance in linear amplifiers. Proprietary design  
techniques have yielded an amplifier with 14dB of  
gain and a -3dB bandwidth of DC to 1100MHz. Gain  
flatness to 750MHz of 0.4dB coupled with eꢀcellent  
VSWR and phase linearity gives outstanding pulse  
fidelity and low signal distortion.  
-3dB bandwidth of 1.1GHz  
325psec rise and fall times  
14dB gain, 50input and output  
Low distortion, linear phase  
1.4:1 VSWR (output, DC-1.1GHz)  
Direct replacement for CLC104  
Applications  
Designed for 50systems, the KH104 is very easy to  
use, requiring only properly bypassed power supplies  
for operation. This translates to time and cost savings  
in all stages of design and production.  
Digital and wideband analog communications  
Radar, IF and RF processors  
Fiber optic drivers and receivers  
Photomultiplier preamplifiers  
Fast rise time, low overshoot and linear phase make  
the KH104 ideal for high speed pulse amplification.  
These properties plus low distortion combine to  
produce an amplifier well suited to many communi-  
cations applications. With a 1.1GHz bandwidth, the  
KH104 can handle the fastest digital traffic, even  
when the demodulation scheme or the digital coding  
format requires that DC be maintained. It is also  
ideal for traditional video amplifier applications such  
as radar or wideband analog communications systems.  
Basic Circuit Diagram  
+15V  
+15V  
39  
0.01  
2.2  
10K  
0.01  
Offset  
Adjust  
0.01  
14  
12  
4
-15V  
1
11  
Vin  
Vo  
KH104  
3,5-10  
2
13  
These same characteristics make the KH104 an eꢀcellent  
choice for use in fiber optics systems, on either the  
transmitting or receiving end of the fiber. The low  
group delay distortion insures that pulse integrity  
will be maintained. As a photomultiplier tube pre-  
amp, its fast response and quick overload recovery  
provide for superior system performance.  
0.01  
2.2  
Capacitance if µF  
39  
0.01  
-15V  
Equivalent Circuit Diagram  
The KH104 is constructed using thin film resistor/  
bipolar transistor technology, and is available in the  
following versions:  
+VCC  
1
KH104AI  
-25°C to +85°C 14-pin double-wide DIP  
+5.4V  
Reg  
14  
11  
13  
Offset  
+VR  
Vo  
12  
Adjust  
4
KH104  
Vin  
Ground  
-VR  
*
-5.4V  
Reg  
2
*Pins 3, 5-10 case is ground  
REV. 1A February 2001  
DATA SHEET  
KH104  
(
V
= 15V, RL = 50, Rs = 50; unless specified)  
CC  
TA = +25°C,  
KH104 Electrical Characteristics  
PARAMETERS  
CONDITIONS  
TYP  
MIN & MAX RATINGS  
UNITS  
SYM  
Ambient Temperature  
KH104AI  
+25°C  
Min  
Max  
FREQUENCY DOMAIN RESPONSE  
-3dB bandwidth  
0dBm out  
1100  
1050  
14.2  
±0.4  
1.5  
1000  
MHz  
MHz  
dB  
dB  
°
SSBW  
SSBW  
10dBm out  
@ 100MHz  
DC - 750MHz  
DC - 600MHz  
non-inverting gain (note 1)  
gain flatness  
linear phase deviation  
group delay  
13.8  
-0.6  
14.9  
+0.6  
3
LPD  
GD  
600  
ps  
reverse isolation  
DC - 750MHz  
750MHz - 1100MHz  
DC - 750MHz  
750MHz - 1100MHz  
DC - 750MHz  
750MHz - 1100MHz  
40  
35  
18  
11  
17  
10  
dB  
dB  
dB  
dB  
dB  
dB  
RINI  
RIIN  
input return loss  
output return loss  
TIME DOMAIN RESPONSE  
rise and fall time  
(10% to 90%)  
settling time to 0.8%  
overshoot  
1V step  
2V step  
1V step  
1V step  
325  
375  
1.2  
3
375  
450  
ps  
ps  
ns  
%
TRS  
TRL  
TS  
OS  
overload recovery  
Vinpeak = ±0.5V  
1.2  
1.6  
ns  
OR  
NOISE AND DISTORTION RESPONSE  
2nd harmonic distortion  
3rd harmonic distortion  
2nd harmonic distortion  
3rd harmonic distortion  
3rd order intermolulation intercept  
2-tone, 1MHz separation  
equivalent input noise voltage  
noise figure  
0dBm, 100MHz  
0dBm, 100MHz  
10dBm, 100MHz  
10dBm, 100MHz  
100MHz  
500MHz  
10Hz to 1200MHz  
47  
53  
40  
43  
26  
17  
55  
11  
71  
65  
-dBc  
-dBc  
-dBc  
-dBc  
+dBm  
HD2  
HD3  
HD2  
HD3  
30  
35  
dB  
dB  
dB  
dB  
usable dynamic range  
100MHz  
500MHz  
STATIC, DC PERFORMANCE  
input bias current  
input bias current (drift)  
output offset voltage  
output offset voltage (drift)  
* supply current  
note 2  
note 2  
note 3  
note 3  
no load  
1KHz  
80  
0.6  
50  
375  
54  
280  
2.0  
250  
625  
60  
µA  
µA/°C  
mV  
µV/°C  
mA  
IBN  
IBN  
ICC  
PSRR  
supply rejection ratio  
55  
dB  
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are  
determined from tested parameters.  
Absolute Maximum Ratings  
Notes  
VCC  
Io  
±9V to ±16V  
±40mA  
±0.5V  
+175°C  
AI: -25°C to +85°C  
-65°C to +150°C  
1. Nominal gain only - gain variation over temperature is ±0.1dB.  
2. Input offset voltage = (input bias current) x (Rs || 50).  
3. Output offset can be adjusted to zero with an external  
potentiometer see Reducing DC Offset.  
4. * AI 100% tested at 25°C.  
input voltage  
junction temperature  
operating temperature  
storage temperature  
AI Sample tested at 25°C.  
2
REV. 1A February 2001  
KH104  
DATA SHEET  
(
V
= 15V, RL = 50, Rs = 50; unless specified)  
TA = +25°C,  
KH104 Performance Characteristics  
CC  
Forward Gain and Phase  
Reverse Gain and Phase  
Input Return Loss  
16  
14  
12  
10  
8
180  
0
20  
40  
60  
80  
360  
180  
0
0
20  
40  
60  
80  
Po = 0dBm  
Po = 0dBm  
|S21|  
0
S21  
S12  
-180  
-360  
540  
|S12|  
-180  
-360  
0
260  
520  
780  
1.04G  
1.3G  
0
260  
520  
780  
1.04G  
1.3G  
0
260  
520  
780  
1.04G  
1.3G  
Frequency (MHz)  
Frequency (MHz)  
Frequency (MHz)  
Output Return Loss  
Pulse Response  
2nd and 3rd Harmonic Distortion  
0
20  
40  
60  
80  
-20  
-30  
-40  
Po = 0dBm  
Input  
Output  
-50  
-60  
-70  
-80  
2nd  
3rd  
0
260  
520  
780  
1.04G  
1.3G  
500ps/div  
100k  
1M  
10M  
100M  
1G  
Frequency (MHz)  
Frequency (Hz)  
-1dB Gain Compression  
2-Tone, 3rd Order Intermod. Intercept  
Noise Spectral Density  
16  
12  
8
30  
25  
20  
-120  
-130  
-140  
-150  
-160  
15  
10  
5
4
0
0
-170  
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
10  
1k  
100k  
10M  
1G  
Frequency (MHz)  
Frequency (MHz)  
Frequency (Hz)  
Usable Dynamic Range  
Relative Bandwidth vs. Case Temp.  
Power Supply Rejection Ratio  
72  
70  
68  
105  
100  
95  
70  
60  
50  
66  
64  
62  
60  
40  
30  
20  
10  
90  
85  
Pd = 1.6W  
ΘCA = 30°C/W  
80  
0
200  
400  
600  
800  
1000  
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
1k  
10k  
100k  
1M  
Frequency (MHz)  
Case Temperature (°C)  
Frequency (Hz)  
REV. 1A February 2001  
3
DATA SHEET  
KH104  
PC Board Layout Considerations  
+15V  
-15V  
+15V  
39  
0.01  
Proper layout of printed circuit boards is important to  
achieve optimum performance of a circuit operating in the  
1GHz frequency range. Use of microstripline is  
recommended for all signal-carrying paths and low  
resistance, low inductance signal return and bypass  
paths should be used. To keep the impedance of  
these paths low, use as much ground plane as possible.  
Ground plane also serves to increase the flow of heat out  
of the package.  
2.2  
10K  
Offset  
Adjust  
0.01  
0.01  
14  
12  
4
1
11  
Vin  
Vo  
KH104  
3,5-10  
2
13  
0.01  
2.2  
Capacitance if µF  
The KH104 has three types of connections: signal paths  
(input and output), DC inputs (supplies and offset adjust),  
and grounds. 50microstrip is recommended for  
connection to the input (pin 4) and output (pin 11).  
Microstrip on a doublesided PC board consists of a  
ground plane on one side of the board and a constant-  
width signal-carrying trace on the other side of the board.  
For 1/16G10 or FR-4 PC board material, a 0.1wide  
trace will have a 50characteristic impedance. The  
ground plane beneath the signal trace must extend at  
least one trace width on either side of the trace. Also, all  
traces (including ground) should be kept at least one  
trace width from the signal carrying traces.  
39  
0.01  
-15V  
Figure 1: Basic Circuit  
If lower offset and offset drift are required, a low frequency  
op amp may be used in conjunction with the KH104 in a  
composite configuration. The suggested circuit appears  
in Figure 2. Its method of operation is to compare an  
attenuated version of the output signal to the input signal  
and apply a correcting voltage at the offset adjust pin. A  
compensation capacitor C reduces the bandwidth of the  
s
op amp correction circuit to limit the op amps effect on  
To keep power supply noise and oscillations from appear-  
ing at the amplifier output, all supply pins should be  
the KH104 to frequencies below f , the frequency at  
45  
which the op amp has 45dB of open loop gain. Using an  
capacitively bypassed to ground.  
The power  
LM108, f is about 7Hz with C = 0.1µF.Thus the op amp  
45  
s
supply pins (1 and 2) are the inputs to a pair of voltage  
regulators whose outputs are at pins 13 and 14. It is  
recommended that 0.01µF or larger ceramic capacitors  
be connected from pins 1, 2, 13 and 14 to ground, within  
0.2of the pins. A 1µF or larger solid tantalum capacitor  
to ground is required within 3of pins 1 and 2, and  
for good low frequency performance, solid tantalum  
capacitors of at least 15µF should be connected from  
pins 13 and 14 to ground within 3of the pins. Use 0.025”  
or wider traces for the supply lines. The offset adjust pin  
can correct DC and low frequency errors below f , with-  
45  
out affecting KH104 performance above f . Also note  
45  
that the noise performance of the op amp will dominate  
below f .  
45  
12  
4
11  
+15V Vin  
KH104  
Vo  
RL  
0.01  
49.9k  
50  
Rc  
9.76k  
0.01  
(12) also requires bypassing;  
a
0.01µF or  
2k  
7
larger ceramic capacitor to ground within 0.2of the pin is  
recommended.  
2
3
Ra  
11.8k  
6
LM108  
8
Rb  
1k  
Grounding is the final layout consideration. Pins 3 and 5-  
10 should all be connected to a ground plane which  
should cover as much of one side of the board around the  
amplifier as possible.  
4
Cs  
0.01  
0.01  
Capacitance in µF  
Rc = (Ra + Rb ) || 49.9k  
-15V  
Reducing DC Offset  
DC offset of the KH104 may be adjusted by applying a  
DC voltage to the amplifiers offset adjust pin (12). The  
simplest method is shown in Figure 1. Using this method  
of offset adjust it is possible to vary the output offset by  
approximately ±400mV. This simple adjustment has no  
effect on the offset drift characteristics of the KH104.  
Figure 2: Composite Amplifier  
With an LM108 op amp in this composite configuration,  
input offset is typically 2mV and drift is 15mV/°C. At  
frequencies well below f , the composite gain is equal  
45  
to (1 + 49.9k/(R + R )) and the output impedance is  
a
b
4
REV. 1A February 2001  
KH104  
DATA SHEET  
very low. As the signal frequency increases beyond f ,  
the op amp loses influence and the KH104 gain and  
output impedance dominate. To ensure a smooth  
voltage across the regulator of 3.6V and a minimum  
regulator current of 10mA will satisfy the regulator  
dropout voltage and current limits.  
45  
transition and matched gain at all frequencies, adjust R  
b
Given the maximum anticipated power supply voltages,  
the shunt resistor should be calculated to yield a 35mA  
current from that voltage to the regulated voltage of 5.4V.  
This will leave 10mA through the regulator at the  
minimum quiescent current of 45mA. The regulator input  
voltages may be reduced directly by dropping the voltage  
supplies, or, if that option is not available, using either  
a zener or resistive dropping element in series with  
the supply. If a series dropping element is used, the  
decoupling capacitors must appear on pins 1 and 2 of the  
KH104. Figure 3 shows two possible power reduction  
circuits from fixed ±15V supplies.  
for a minimum op amp output swing with a 0.1V  
pp  
sinewave input (to the KH104) at the frequency f . Since  
45  
the KH104 has  
a
50output impedance, its  
output voltage is a function of the load impedance  
_
(A ~ 10R /(R + 50)), whereas the gain of the compos-  
v
L
L
ite amplifier at low frequencies and DC is relatively  
independent of the load impedance, due to the high  
open-loop gain of the op amp. Thus, to avoid gain  
mismatching and phase non-linearity, use the composite  
amplifier only if the load impedance is constant from DC  
to at least 10(f ).  
45  
Use of a composite amplifier reduces input offset voltage  
and its corresponding drift, but has no effect on input bias  
current. This current is converted to an input voltage by  
the resistance to ground seen at the amplifier input and  
the voltage appears, amplified, at the output. Typical  
input offset voltage due to the bias current is 2mV and  
input offset drift is approximately 15mV/°C.  
Several methods of decreasing the thermal resistance  
from case to ambient are possible. With no heat paths  
other than still air at 25°C, the thermal resistance from  
case to ambient for the KH104 is about 40°C/W. When  
placed in a printed circuit board with all ground pins  
soldered into a ground plane 1X 1.5, the thermal  
resistance drops to about 30°C/W In this configuration,  
the case rise will be 30°C for 9V supplies and 50°C  
for 16V supplies. This results in maximum allowable  
ambient temperatures of 110°C and 90°C, respectively. If  
higher operating temperatures are required, heat sinking  
of the package is recommended.  
Thermal Considerations  
The KH104 case must be maintained at or below 140°C.  
Note that because of the amplifier design, power dissipa-  
tion remains fairly constant, independent of the load or  
drive level. Therefore, standard derating is not possible.  
There are two ways to keep the case temperature low.  
The first is to keep the amount of power dissipated inside  
the package to a minimum and the second is to get the  
heat out of the package quickly by reducing the thermal  
resistance from case to ambient.  
+15V  
+15V  
60  
D1  
5.6V  
+
+
2.2µF  
0.01µF  
2.2µF  
0.01µF  
115Ω  
115Ω  
200Ω  
200Ω  
1
2
1
2
A large portion of the heat dissipated inside the package  
is in the voltage regulators. At the minimum +9V supply  
level the regulators dissipate 390mW and at the  
maximum ±16V supply level they dissipate 1.2W.  
14  
13  
14  
13  
Vin  
Vin  
Vo  
Vo  
The amplifier itself dissipates a fairly constant 600mW  
(55mA x 10.8V). Reducing the power dissipation of the  
internal regulators will go far towards reducing the  
internal junction temperatures without impacting the so  
performance. Reducing either the input supply voltages  
(on pins 1 and 2) and/or shunting the regulator current  
through external resistors (from pins 1 to 14 and pins  
2 to 13) are both effective means towards significantly  
reducing the internal power dissipation. A minimum  
2.2µF  
0.01µF  
2.2µF  
0.01µF  
+
+
D2  
5.6V  
60Ω  
-15V  
-15V  
D1, D2 IN4734  
nominal, no load Pd 760mW  
~
~
nominal, no load Pd 900mW  
Figure 3: Reducing Power Dissipation  
REV. 1A February 2001  
5
DATA SHEET  
KH104  
KH104 Package Dimensions  
0.140 0.180  
(3.56 4.57)  
0.060 R (TYP)  
0.016 0.020  
(0.41 0.51)  
0.740 0.760  
(18.80 19.30)  
0.740 0.760  
(18.80 19.30)  
0.590 0.610  
(14.99 15.49)  
0.240 0.260  
(6.10 6.60)  
0.090 0.110  
(2.29 2.79)  
0.590 0.610  
(14.99 15.49)  
0.050 R (TYP)  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICES TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT  
OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:  
1.  
Life support devices or systems are devices or systems which, (a) are intended for  
surgical implant into the body, or (b) support or sustain life, and (c) whose failure to  
perform when properly used in accordance with instructions for use provided in the  
labeling, can be reasonably expected to result in a significant injury of the user.  
2.  
A critical component in any component of a life support device or system whose  
failure to perform can be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
© 2001 Fairchild Semiconductor Corporation  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  

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