KM4200IM8TR3_NL [FAIRCHILD]
Operational Amplifier, 2 Func, 8000uV Offset-Max, BIPolar, PDSO8, MSOP-8;
| 型号： | KM4200IM8TR3_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Operational Amplifier, 2 Func, 8000uV Offset-Max, BIPolar, PDSO8, MSOP-8 运算放大器 放大器电路 光电二极管 |
| 文件： | 总11页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KM4200
Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier
Features
General Description
The KM4200 is a dual, low cost, voltage feedback
amplifier. This amplifier is designed to operate on
+2.7V, +5V, or 2.5V supplies. The input voltage
range extends 300mV below the negative rail and
1.2V below the positive rail. The KM4100 (single) and
KM4101 (single with disable) are also available.
ꢀ
260MHz bandwidth
ꢀ
Fully specified at +2.7V and +5V supplies
ꢀ
Output voltage range: 0.036V to 4.953V;
V = +5; R = 2kΩ
s
L
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Input voltage range: -0.3V to +3.8V; V = +5
s
145V/µs slew rate
4.2mA supply current per amplifier
55mA linear output current
85mA short circuit current
Directly replaces AD8052 and AD8042 in single
supply applications
The KM4200 offers superior dynamic performance
with a 260MHz small signal bandwidth and 145V/µs
slew rate. The combination of low power, high out-
put current drive, and rail-to-rail performance make
the KM4200 well suited for battery-powered com-
munication/computing systems.
ꢀ
Small package options (SOIC and MSOP)
The combination of low cost and high performance
make the KM4200 suitable for high volume applica-
tions in both consumer and industrial applications
such as wireless phones, scanners, and color copiers.
Applications
ꢀ
A/D driver
ꢀ
Active filters
ꢀ
CCD imaging systems
ꢀ
CD/DVD ROM
ꢀ
Coaxial cable drivers
High capacitive load driver
Output Swing
ꢀ
2.7
ꢀ
Portable/battery-powered applications
ꢀ
Twisted pair driver
ꢀ
Video driver
KM4200 Packages
SOIC
V
R
G = -1
= +2.7V
= 2kΩ
s
Out1
-In1
+In1
-Vs
1
2
3
4
8
7
6
5
+Vs
L
0
Out2
-In2
+In2
-
Time (0.5µs/div)
+
-
+
MSOP
Out1
-In1
+In1
-Vs
1
2
3
4
8
7
6
5
+Vs
Out2
-In2
+In2
-
+
-
+
REV. 1A February 2001
DATA SHEET
KM4200
(V = +2.7V, G = 2, R = 2kΩ to V /2; unless noted)
KM4200 Electrical Characteristics
s
L
s
PARAMETERS
CONDITIONS
TYP
MIN & MAX UNITS
NOTES
Case Temperature
+25°C
+25°C
Frequency Domain Response
-3dB bandwidth
G = +1, V = 0.05Vpp
o
215
85
MHz
MHz
MHz
MHz
1
G = +2, V = 0.2Vpp
o
full power bandwidth
gain bandwidth product
G = +2, V = 2Vpp
o
36
86
Time Domain Response
rise and fall time
settling time to 0.1%
overshoot
0.2V step
3.7
40
9
ns
ns
1
1V step
0.2V step,
2.7V step, G = -1
%
slew rate
130
V/µs
Distortion and Noise Response
2nd harmonic distortion
3rd harmonic distortion
THD
input voltage noise
input current noise
crosstalk
1Vpp, 5MHz
1Vpp, 5MHz
1Vpp, 5MHz
>1MHz
79
82
77
16
1.3
65
dBc
dBc
1
1
1
dB
nV/√Hz
pA/√Hz
dB
>1MHz
10MHz
1
DC Performance
input offset voltage
average drift
-1.6
10
3
8
8
mV
µV/°C
µA
2
2
input bias current
average drift
7
nA/°C
µA
input offset current
power supply rejection ratio
open loop gain
0.1
57
75
3.9
1
52
65
5
2
2
2
2
DC
dB
dB
quiescent current per amplifier
mA
Input Characteristics
input resistance
4.3
1.8
-0.3 to 1.5
87
MΩ
pF
V
input capacitance
input common mode voltage range
common mode rejection ratio
DC, Vcm = 0V to Vs - 1.5
72
dB
2
Output Characteristics
output voltage swing
RL = 10kΩ to Vs/2
RL = 2kΩ to Vs/2
RL = 150Ω to Vs/2
0.023 to 2.66
V
V
0.025 to 2.653 0.1 to 2.6
2
2
0.065 to 2.55 0.3 to 2.325
V
linear output current
55
50
85
mA
mA
mA
V
-40°C to +85°C
short circuit output current
power supply operating range
2.7
2.5 to 5.5
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels
are determined from tested parameters.
NOTES:
1) R = 1kΩ was used used for optimal performance. (For G = +1, R = 0)
f
f
2) 100% tested at +25°C.
Absolute Maximum Ratings
Package Thermal Resistance
Package
θ
JA
supply voltage
0 to +6V
+175°C
-65°C to +150°C
+300°C
maximum junction temperature
storage temperature range
lead temperature (10 sec)
8 lead SOIC
8 lead MSOP
152°C/W
206°C/W
operating temperature range (recommended) -40°C to +85°C
input voltage range
+Vs +0.5V; -Vs -0.5V
internal power dissipation
see power derating curves
2
REV. 1A February 2001
KM4200
DATA SHEET
(V = +5V, G = 2, R = 2kΩ to V /2; unless noted)
KM4200 Electrical Characteristics
s
L
s
Parameters
Conditions
TYP
+25°C
Min & Max UNITS
NOTES
Case Temperature
+25°C
Frequency Domain Response
-3dB bandwidth
G = +1, V = 0.05Vpp
o
260
90
MHz
MHz
MHz
MHz
1
G = +2, V = 0.2Vpp
o
full power bandwidth
gain bandwidth product
G = +2, V = 2Vpp
o
40
90
Time Domain Response
rise and fall time
settling time to 0.1%
overshoot
0.2V step
3.6
40
7
ns
ns
1
2V step
0.2V step,
5V step, G = -1
%
slew rate
145
V/µs
Distortion and Noise Response
2nd harmonic distortion
3rd harmonic distortion
THD
input voltage noise
input current noise
crosstalk
2Vpp, 5MHz
2Vpp, 5MHz
2Vpp, 5MHz
>1MHz
71
78
70
16
1.3
62
dBc
dBc
dB
nV/√Hz
pA/√Hz
dB
1
1
1
>1MHz
10MHz
1
DC Performance
input offset voltage
average drift
1.4
10
3
8
8
mV
µV/°C
µA
2
2
input bias current
average drift
7
nA/°C
µA
input offset current
power supply rejection ratio
open loop gain
0.1
57
78
4.2
0.8
52
2
2
2
2
DC
dB
68
dB
quiescent current per amplifier
5.2
mA
Input Characteristics
input resistance
4.3
1.8
-0.3 to 3.8
87
MΩ
pF
V
input capacitance
input common mode voltage range
common mode rejection ratio
DC, Vcm = 0V to Vs - 1.5
72
dB
2
Output Characteristics
output voltage swing
RL = 10kΩ to Vs/2
RL = 2kΩ to Vs/2
RL = 150Ω to Vs/2
0.027 to 4.97
V
V
0.036 to 4.953 0.1 to 4.9
2
2
0.12 to 4.8
0.3 to 4.625
V
linear output current
55
50
85
5
mA
mA
mA
V
-40°C to +85°C
short circuit output current
power supply operating range
2.5 to 5.5
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels
are determined from tested parameters.
NOTES:
1) R = 1kΩ was used used for optimal performance. (For G = +1, R = 0)
f
f
2) 100% tested at +25°C.
REV. 1A February 2001
3
DATA SHEET
KM4200
(V = +5V, G = 2, R = 2kΩ, R = 2kΩ to V /2; unless noted)
KM4200 Performance Characteristics
s
f
L
s
Non-Inverting Freq. Response V = +5V
s
Inverting Frequency Response V = +5V
s
G = -1
G = 1
f
R = 2kΩ
f
R = 0
G = 2
R = 1kΩ
f
G = -10
R = 2kΩ
G = 10
f
f
R = 2kΩ
G = -5
R = 2kΩ
f
G = 5
R = 2kΩ
f
G = -2
R = 2kΩ
f
0.1
1
10
100
0.1
1
10
100
Frequency (MHz)
Frequency (MHz)
Non-Inverting Freq. Response V = +2.7
s
Inverting Frequency Response V = +2.7V
s
G = -1
G = 1
f
R = 2kΩ
f
R = 0
G = 2
R = 1kΩ
f
G = -10
R = 2kΩ
f
G = 10
f
R = 2kΩ
G = -5
R = 2kΩ
f
G = 5
R = 2kΩ
G = -2
f
R = 2kΩ
f
0.1
1
10
100
0.1
1
10
100
Frequency (MHz)
Frequency (MHz)
Frequency Response vs. C
Large Signal Frequency Response
L
C
= 100pF
L
R
= 25Ω
V
V
= 1V
= 2V
s
o
pp
C
R
= 50pF
L
= 33Ω
s
o
pp
C
R
= 20pF
L
+
-
= 20Ω
Rs
s
CL RL
1kΩ
C
= 10pF
L
R
= 0Ω
1kΩ
s
0.1
1
10
100
0.1
1
10
100
Frequency (MHz)
Frequency (MHz)
Frequency Response vs. Temperature
Input Voltage Noise
100
90
80
70
60
50
40
30
20
10
0
1
10
100
1k
10k
100k
1M
Frequency (MHz)
Frequency (Hz)
4
REV. 1A February 2001
KM4200
DATA SHEET
(V = +5V, G = 2, R = 2kΩ, R = 2kΩ to V /2; unless noted)
KM4200 Performance Characteristics
s
f
L
s
2nd & 3rd Harmonic Distortion; V = +5V
2nd & 3rd Harmonic Distortion; V = +2.7V
s
s
-20
-30
-40
-50
-60
-70
-80
-90
-20
-30
-40
-50
-60
-70
-80
-90
V
= 2V
V = 1V
o
o
pp
pp
R = 1kΩ
R = 1kΩ
3rd
= 150Ω
f
f
R
L
2nd
= 150Ω
3rd
= 150Ω
R
R
L
L
2nd
= 150Ω
R
L
2nd
= 2kΩ
2nd
R
R
= 2kΩ
L
L
3rd
L
3rd
L
R
= 2kΩ
R
= 2kΩ
0
5
10
15
0
5
10
15
20
20
Frequency (MHz)
Frequency (MHz)
2nd Harmonic Distortion vs. V
3rd Harmonic Distortion vs. V
o
o
-20
-30
-40
-50
-60
-70
-80
-90
-20
-30
-40
-50
-60
-70
-80
-90
R = 1kΩ
f
R = 1kΩ
f
20MHz
10MHz
20MHz
10MHz
5MHz
2MHz
5MHz
2MHz
0.5
1.0
1.5
2.0
0.5
1.0
1.5
2.0
2.5
2.5
100
100
Output Amplitude (V
)
Output Amplitude (V )
pp
pp
PSRR
CMRR
0
-10
-20
-30
-40
-50
-60
-70
-40
-50
-60
-70
-80
-90
1k
0.01
0.1
1
0.01
0.1
1.0
10
10
100
Frequency (MHz)
Frequency (MHz)
Open Loop Gain & Phase vs. Frequency
Output Current
80
70
60
50
40
30
20
10
0
0.8
0.6
0.4
0.2
0
|Gain|
Linear output current –55mA
Short circuit current –85mA
0
-0.2
-0.4
Phase
-45
-90
-135
-180
-0.6
-0.8
-10
-20
0.01
0.1
1
10
100
-100
-50
0
50
Frequency (MHz)
Output Current (mA)
REV. 1A February 2001
5
DATA SHEET
KM4200
(V = +5V, G = 2, R = 2kΩ, R = 2kΩ to V /2; unless noted)
KM4200 Performance Characteristics
s
f
L
s
Small Signal Pulse Response V = +5V
s
Small Signal Pulse Response V = +2.7V
s
R = 1kΩ
R = 1kΩ
f
f
Time (20ns/div)
Time (20ns/div)
Large Signal Pulse Response V = +5V
s
Output Swing
2.7
R = 1kΩ
f
V
R
= +2.7V
= 2kΩ
s
L
G = -1
0
Time (20ns/div)
Time (0.5µs/div)
Channel Matching V = +5V
s
CMIR
R = 1kΩ
f
R
= 2kΩ
Channel 1
L
G = 2
Channel 2
0
0.1
1
10
100
-1
0
4
5
1
2
3
Frequency (MHz)
CMIR (1V/div)
6
REV. 1A February 2001
KM4200
DATA SHEET
Frequency Reponse vs. R
General Description
f
The KM4200 is a single supply, general purpose, voltage-
feedback amplifier fabricated on a complementary
bipolar process using a patent pending topography. It
features a rail-to-rail output stage and is unity gain
stable. Both gain bandwidth and slew rate are insensitive
to temperature.
G = 2
R
V
= 2kΩ
= +5V
L
R = 2kΩ
f
s
R = 1kΩ
f
The common mode input range extends to 300mV
below ground and to 1.2V below V . Exceeding these
s
values will not cause phase reversal. However, if the
input voltage exceeds the rails by more than 0.5V, the
input ESD devices will begin to conduct. The output
will stay at the rail during this overdrive condition.
1
10
100
Frequency (MHz)
Figure 2: Frequency Response vs. R
The design uses a Darlington output stage. The out-
put stage is short circuit protected and offers “soft”
saturation protection that improves recovery time.
f
Power Dissipation
The maximum internal power dissipation allowed is
directly related to the maximum junction temperature.
If the maximum junction temperature exceeds 150°C,
some reliability degradation will occur. If the maximum
junction temperature exceeds 175°C for an extended
time, device failure may occur.
The typical circuit schematic is shown in Figure 1.
+Vs
6.8µF
+
The KM4200 is short circuit protected. However, this
may not guarantee that the maximum junction tem-
perature (+150°C) is not exceeded under all conditions.
Follow the maximum power derating curves shown in
Figure 3 to ensure proper operation.
0.01µF
+In1
+
Out1
1/2
KM4200
-
Maximum Power Dissipation
Rf
2.0
Rg
1.5
SOIC-8 lead
1.0
Figure 1: Typical Configuration
At non-inverting gains other than G = +1, keep R
MSOP-8 lead
0.5
g
below 1kΩ to minimize peaking; thus, for optimum
response at a gain of +2, a feedback resistor of 1kΩ is
recommended. Figure 2 illustrates the KM4200
frequency response with both 1kΩ and 2kΩ feedback
resistors.
0
-50
-30
-10
10
30
50
70
90
Ambient Temperature ( C)
Figure 3: Power Derating Curves
Overdrive Recovery
For an amplifier, an overdrive condition occurs when
the output and/or input ranges are exceeded. The
recovery time varies based on whether the input or
output is overdriven and by how much the ranges are
exceeded. The KM4200 will typically recover in less
than 20ns from an overdrive condition. Figure 4
shows the KM4200 in an overdriven condition.
REV. 1A February 2001
7
DATA SHEET
KM4200
Overdrive Recovery
Refer to the evaluation board layouts shown in Figure
7 for more information.
R
V
= 2kΩ
L
Input
=2V
in
pp
G = 5
f
When evaluating only one channel, complete the
following on the unused channel
R = 1kΩ
Output
1.
2.
Ground the non-inverting input
Short the output to the inverting input
Evaluation Board Information
The following evaluation boards are available to aid
in the testing and layout of this device:
Time (20ns/div)
Eval Board
Description
Products
Figure 4: Overdrive Recovery
Driving Capacitive Loads
KEB006
Dual Channel, Dual Supply
8 lead SOIC
KM4200IC8
KEB010
Dual Channel, Dual Supply
8 lead MSOP
KM4200IM8
The Frequency Response vs. C plot on page 4,
illustrates the response of the KM4200. A small series
L
resistance (R ) at the output of the amplifier, illustrated
s
in Figure 5, will improve stability and settling
Evaluation board schematics and layouts are shown in
Figure 6 and Figure 7.
performance. R values in the Frequency Response vs.
s
C plot were chosen to achieve maximum bandwidth
with less than 1dB of peaking. For maximum flatness,
L
The KEB006 evaluation board is built for dual supply
operation. Follow these steps to use the board in a
single supply application:
use a larger R .
s
1.
2.
Short -V to ground
Use C3 and C4, if the -V pin of the KM4200 is
not directly connected to the ground plane.
s
+
-
s
Rs
CL RL
Rf
Rg
Figure 5: Typical Topology for driving
a capacitive load
Layout Considerations
General layout and supply bypassing play major roles
in high frequency performance. Fairchild has evaluation
boards to use as a guide for high frequency layout
and to aid in device testing and characterization.
Follow the steps below as a basis for high frequency
layout:
ꢀ
Include 6.8µF and 0.01µF ceramic capacitors
ꢀ
Place the 6.8µF capacitor within 0.75 inches
of the power pin
ꢀ
Place the 0.01µF capacitor within 0.1 inches
of the power pin
ꢀ
Remove the ground plane under and around the
part, especially near the input and output pins to
reduce parasitic capacitance
ꢀ
Minimize all trace lengths to reduce
series inductances
Figure 6: Evaluation Board Schematic
8
REV. 1A February 2001
KM4200
DATA SHEET
KM4200 Evaluation Board Layout
Figure 7a: KEB006 (top side)
Figure 7b: KEB006 (bottom side)
Figure 7c: KEB010 (top side)
Figure 7d: KEB010 (bottom side)
REV. 1A February 2001
9
DATA SHEET
KM4200
KM4200 Package Dimensions
SOIC-8
MIN
SYMBOL
MAX
0.25
0.46
0.25
4.98
3.99
A1
B
C
D
E
e
0.10
0.36
0.19
4.80
3.81
1.27 BSC
D
7¡
e
ZD
C
L
SOIC
H
h
L
5.80
0.25
0.41
1.52
0
6.20
0.50
1.27
1.72
8
C
E
H
L
A
ZD
A2
0.53 ref
1.57
1.37
Pin No. 1
B
DETAIL-A
L
NOTE:
1. All dimensions are in millimeters.
h x 45¡
DETAIL-A
2. Lead coplanarity should be 0 to 0.10mm (.004") max.
3. Package surface finishing:
A1
A2
α
A
(2.1) Top: matte (charmilles #18~30).
(2.2) All sides: matte (charmilles #18~30).
(2.3) Bottom: smooth or matte (charmilles #18~30).
C
4. All dimensions excluding mold flashes and end flash
from the package body shall not exceed o.152mm (.006)
per side(d).
02
e
S
MSOP-8
SYMBOL
A
MIN
MAX
–
1.10
t1
A1
A2
D
D2
E
E1
E2
E3
E4
R
R1
t1
t2
b
b1
c
c1
01
02
03
L
L1
aaa
bbb
ccc
e
0.10
0.86
3.00
2.95
4.90
3.00
2.95
0.51
0.51
0.15
0.15
0.31
0.41
0.33
0.30
0.18
±0.05
±0.08
±0.10
±0.10
±0.15
±0.10
±0.10
±0.13
±0.13
+0.15/-0.06
+0.15/-0.06
±0.08
±0.08
+0.07/-0.08
±0.05
±0.05
+0.03/-0.02
±3.0°
±3.0°
±3.0°
±0.15
–
MSOP
R1
E/2 2X
t2
– H –
R
Gauge
Plane
3
7
E1
0.25mm
b
01
L
03
2
– B –
E3
E4
L1
Detail A
ccc
A B C
1
2
Scale 40:1
c
c1
2
4
6
b1
Detail A
D2
A2
E2
Section A - A
0.15
3.0°
5
A
A
12.0°
12.0°
0.55
0.95 BSC
0.10
0.08
0.25
0.65 BSC
0.525 BSC
– A –
b
A
E1
E
bbb M A B C
A1
aaa
A
D
3
4
–
–
–
–
NOTE:
S
–
1
2
3
4
5
6
7
All dimensions are in millimeters (angle in degrees), unless otherwise specified.
Datums – B – and – C – to be determined at datum plane – H – .
Dimensions "D" and "E1" are to be determined at datum – H – .
Dimensions "D2" and "E2" are for top package and dimensions "D" and "E1" are for bottom package.
Cross sections A – A to be determined at 0.13 to 0.25mm from the leadtip.
Dimension "D" and "D2" does not include mold flash, protrusion or gate burrs.
Dimension "E1" and "E2" does not include interlead flash or protrusion.
10
REV. 1A February 2001
KM4200
DATA SHEET
Ordering Information
Model
Part Number
KM4200IC8
Package Container Pack Qty
KM4200
SOIC-8
SOIC-8
Rail
Reel
Rail
95
2500
50
KM4200IC8TR3
KM4200IM8
MSOP-8
MSOP-8
KM4200IM8TR3
Reel
4000
Temperature range for all parts: -40°C to +85°C.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICES TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT
OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1.
Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant injury of the user.
2.
A critical component in any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
© 2001 Fairchild Semiconductor Corporation
相关型号：
©2020 ICPDF网 联系我们和版权申明