KSA1220 [FAIRCHILD]
Audio Frequency Power Amplifier High Frequency Power Amplifier; 音频功放高频功率放大器
| 型号： | KSA1220 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Audio Frequency Power Amplifier High Frequency Power Amplifier |
| 文件： | 总5页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSA1220/1220A
Audio Frequency Power Amplifier
High Frequency Power Amplifier
•
Complement to KSC2690/KSC2690A
TO-126
1. Emitter 2.Collector 3.Base
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Ratings
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
: KSA1220
: KSA1220A
- 120
- 160
V
V
CBO
: KSA1220
: KSA1220A
- 120
- 160
V
V
CEO
EBO
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
- 5
- 1.2
- 2.5
- 0.3
1.2
V
A
I
I
I
C
A
CP
B
A
P
P
Collector Dissipation (T =25°C)
W
W
°C
°C
C
a
Collector Dissipation (T =25°C)
20
C
C
T
T
Junction Temperature
150
J
Storage Temperature
- 55 ~ 150
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
Min.
Typ.
Max.
- 1
Units
µA
I
I
V
V
= - 120V, I = 0
CBO
EBO
CB
EB
E
= - 3V, I = 0
- 1
µA
C
h
h
V
V
= - 5V, I = - 5mA
35
60
150
140
FE1
FE2
CE
CE
C
= - 5V, I = - 0.3A
320
- 0.7
- 1.3
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I
I
= - 1A, I = - 0.2A
- 0.4
- 1
V
V
CE
C
C
B
= - 1A, I = - 0.2A
BE
B
f
V
= - 5V, I = - 0.2A
175
26
MHz
pF
T
CE
C
C
V
= - 10, I = 0
E
ob
CB
f = 1MHz
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
R
O
Y
h
60 ~ 120
100 ~ 200
160 ~ 320
FE2
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
-1.0
1000
100
10
IB
=
-7mA
IB -6mA
-5mA
=
VCE = -5V
IB
=
Pulse Test
-0.8
-0.6
-0.4
-0.2
-0.0
IB
= -4mA
IB
= -3mA
IB
= -2mA
IB
= -1mA
IB
=
0A
1
-0
-10
-20
-30
-40
-50
-60
-1E-3
-0.01
-0.1
-1
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
1000
100
10
-10
f=1.0MHz
IE=0
IC = 5 IB
Pulse Test
-1
VBE(sat)
-0.1
VCE(sat)
-0.01
-1E-3
1
-0.01
-0.1
-1
-10
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
-10
1000
VCE = -5V
IC MAX. (Pulse)
Pulse Test
IC MAX. (DC)
-1
100
10
1
Dissipation
Limited
-0.1
KSA1220
KSA1220A
-0.01
-1
-10
-100
-1000
-0.01
-0.1
-1
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics(Continued)
160
140
120
100
80
20
18
16
14
12
10
8
60
6
40
4
20
2
0
0
0
50
100
150
200
0
50
100
150
200
Tc[oC], CASE TEMPERATURE
TC[oC], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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