KSA709YTA [FAIRCHILD]
High Voltage Amplifier; 高电压放大器
| 型号： | KSA709YTA |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage Amplifier |
| 文件： | 总4页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSA709
High Voltage Amplifier
•
•
•
•
Collector-Base Voltage : V
Collector Power Dissipation : P =800mW
Complement to KSC1009
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
= -160V
CBO
C
TO-92
1. Emitter 2. Base 3. Collector
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-160
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
-150
V
CEO
EBO
-8
V
I
-700
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
800
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
-160
-150
-8
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I = -100µA, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I = -10mA, I =0
C B
I = -100µA, I =0
V
E
C
I
I
V
= -100V, I =0
-0.1
-0.1
400
-0.4
-1.0
µA
µA
CBO
EBO
CB
EB
CE
E
Emitter Cut-off Current
V
V
= -5V, I =0
C
h
* DC Current Gain
= -2V, I = -50mA
70
FE
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I = -200mA, I = -20mA
-0.3
-0.9
50
V
V
CE
BE
C
B
I = -200mA, I = -20mA
C
B
f
V
= -10V, I = -50mA
MHz
pF
T
CE
CB
C
C
V
= -10V, I =0, f=1MHz
10
ob
E
* Pulse Test: PW≤350µs, Duty cycle≤2%
h
Classification
FE
Classification
O
Y
G
h
70 ~ 140
120 ~ 240
200 ~ 400
FE
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
Typical Characteristics
1000
100
10
-100
IB = -0.8mA
VCE = -5V
IB = -0.6mA
-80
IB = -0.4mA
-60
-40
-20
0
IB = -0.2mA
1
-0.1
-1
-10
-100
0
-2
-4
-6
-8
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-1000
-100
-10
IC = 10 IB
VCE = -1V
VBE(sat)
-1
-0.1
VCE(sat)
-0.01
-1
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
IE = 0
f = 1MHz
10
1
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™ ImpliedDisconnect™ PACMAN™
SPM™
Stealth™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
ISOPLANAR™
LittleFET™
POP™
Power247™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
MICROCOUPLER™ PowerSaver™
MicroFET™
GlobalOptoisolator™ MicroPak™
PowerTrench®
QFET®
GTO™
HiSeC™
I2C™
MICROWIRE™
MSX™
QS™
QT Optoelectronics™ TinyLogic®
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
Quiet Series™
TINYOPTO™
TruTranslation™
UHC™
i-Lo™
RapidConfigure™
RapidConnect™
Across the board. Around the world.™
SILENT SWITCHER® UltraFET®
The Power Franchise®
SMART START™
VCX™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I10
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