KSB1121R [FAIRCHILD]

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon;
KSB1121R
型号: KSB1121R
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

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文件: 总5页 (文件大小:430K)
中文:  中文翻译
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July 2005  
KSB1121  
PNP Epitaxial Planar Silicon Transistor  
High Current Driver Applications  
Low Collector-Emitter Saturation Voltage  
Large Current Capacity  
Fast Switching Speed  
Complement to KSD1621  
Marking  
1 1  
P Y  
2 1  
W W  
SOT-89  
1
Weekly code  
Year code  
hFE grage  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-30  
-25  
-6  
V
V
V
A
VCEO  
VEBO  
IC  
-2  
PC  
PC*  
Collector Power Dissipation  
500  
1.3  
mW  
W
TJ  
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
TSTG  
-55 ~ 150  
* Mounted on Ceramic Board (250mm2 x 0.8mm)  
Electrical Characteristics Ta = 25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
IC = -10µA, IE = 0  
-30  
-25  
-6  
V
IC = -1mA, IB = 0  
IE = -10µA, IC = 0  
VCB = -20V, IE = 0  
VBE = -4V, IC = 0  
VCE = -2V, IC = -0.1A  
V
V
-100  
-100  
560  
nA  
nA  
IEBO  
Emitter Cut-off Current  
hFE1  
hFE2  
DC Current Gain  
100  
65  
V
CE = -2V, IC = -1.5A  
VCE (sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC = -1.5A, IB = -75mA  
IC = -1.5A, IB = -75mA  
-0.35  
-0.85  
-0.6  
-1.2  
V
V
V
BE (sat)  
©2005 Fairchild Semiconductor Corporation  
KSB1121 Rev. B1  
1
www.fairchildsemi.com  
Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Current Gain Bandwidth Product  
Output Capacitance  
Turn On Time *  
Test Condition  
VCE = -10V, IC = -50mA  
VCB = -10V, IE = 0, f = 1MHz  
VCC = -12V, VBE = -5V  
Min.  
Typ.  
150  
32  
Max.  
Units  
MHz  
pF  
fT  
Cob  
tON  
tSTG  
tF  
60  
ns  
I
B1 = -IB2 = -25mA  
Storage Time *  
350  
25  
ns  
IC= -500mA, RL = 24Ω  
Fall time *  
ns  
hFE Classification  
Classification  
R
S
T
U
hFE1  
100 ~ 200  
140 ~ 280  
200 ~ 400  
280 ~ 560  
Package Marking and Ordering Information  
Device Marking  
Device  
KSB1121  
Package  
SOT-89  
Reel Size  
Tape Width  
Quantity  
4,000  
1121  
13”  
--  
2
www.fairchildsemi.com  
KSB1121 Rev. B1  
Typical Performance Characteristics  
Figure 1. Static Characteristic  
Figure 2. DC Current Gain  
1000  
IB = -100mA  
IB = -30mA  
IB = -20mA  
IB = -50mA  
IB = -200mA  
VCE= -2V  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
0.0  
100  
10  
1
IB = -10mA  
IB = -8mA  
IB = -6mA  
IB = -4mA  
IB = -2mA  
IB = 0  
0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-0.01  
-0.1  
-1  
-10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
-3.2  
-2.8  
-2.4  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
0.0  
-10  
VCE = -2V  
IC = 10 IB  
-1  
-0.1  
-0.01  
0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
-0.01  
-0.1  
-1  
-10  
VBE[V], BASE-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 5. Collector Output Capacitance  
Figure 6. Current Gain Bandwidth Product  
1000  
1000  
VCE = -10V  
IE=0  
f = 1MHz  
100  
10  
1
100  
10  
-0.1  
-1  
-10  
-100  
-0.1  
-1  
-10  
VCB [V], COLLECTOR-BASE VOLTAGE  
IC[A], COLLECTOR CURRENT  
3
www.fairchildsemi.com  
KSB1121 Rev. B1  
Mechanical Dimensions  
SOT-89  
1.50 0.20  
4.50 0.20  
1.65 0.10  
(0.40)  
C0.2  
0.50 0.10  
0.40 0.10  
+0.10  
–0.05  
0.40  
1.50 TYP 1.50 TYP  
Dimensions in Millimeters  
4
www.fairchildsemi.com  
KSB1121 Rev. B1  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to  
be an exhaustive list of all such trademarks.  
ACEx™  
FAST®  
ISOPLANAR™  
LittleFET™  
PowerSaver™  
PowerTrench®  
QFET®  
SuperSOT™-8  
SyncFET™  
TinyLogic®  
TINYOPTO™  
TruTranslation™  
UHC™  
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
FASTr™  
FPS™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
FRFET™  
GlobalOptoisolator™  
GTO™  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
CROSSVOLT™  
DOME™  
HiSeC™  
UltraFET®  
UniFET™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
I2C™  
MSXPro™  
i-Lo™  
OCX™  
VCX™  
Wire™  
ImpliedDisconnect™  
IntelliMAX™  
OCXPro™  
SILENT SWITCHER®  
SMART START™  
SPM™  
FACT™  
OPTOLOGIC®  
OPTOPLANAR™  
PACMAN™  
POP™  
FACT Quiet Series™  
Stealth™  
Across the board. Around the world.™  
SuperFET™  
The Power Franchise®  
Power247™  
PowerEdge™  
SuperSOT™-3  
SuperSOT™-6  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY  
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT  
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support  
or sustain life, or (c) whose failure to perform when properly used  
in accordance with instructions for use provided in the labeling,  
can be reasonably expected to result in significant injury to the  
user.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I16  
5
www.fairchildsemi.com  
KSB1121 Rev. B1  

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