KSB817YTU [FAIRCHILD]

Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN;
KSB817YTU
型号: KSB817YTU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

文件: 总6页 (文件大小:84K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSB817  
Audio Power Amplifier  
Car Booster Output Amplifier  
DC to DC Converter  
High Current Capability  
High Power Dissipation  
Complementary to KSD1047  
TO-3P  
1.Base 2.Collector 3.Emitter  
1
PNP Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 160  
- 140  
- 6  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
V
V
CBO  
CEO  
EBO  
V
V
I
I
- 8  
A
C
*Collector Current (Pulse)  
- 16  
A
CP  
P
T
T
Collector Dissipation (T =25°C)  
80  
W
°C  
°C  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 40 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
- 160  
- 140  
-6  
Typ.  
Max.  
Units  
BV  
BV  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= - 5mA, I = 0  
V
V
CBO  
CEO  
EBO  
C
C
E
E
= - 10mA, I = 0  
B
= - 5mA, I = 0  
V
C
I
I
V
V
= - 80V, I = 0  
- 0.1  
- 0.1  
200  
mA  
mA  
CBO  
EBO  
CB  
BE  
E
Emitter Cut-off Current  
= - 4V, I = 0  
C
h
h
* DC Current Gain  
V
V
= - 5V, I = - 1A  
60  
20  
FE1  
FE2  
CE  
CE  
C
= - 5V, I = - 6A  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
Turn ON Time  
I
= - 5A, I = - 0.5A  
- 2.5  
- 1.5  
V
V
CE  
C
B
V
V
V
V
= - 5V, I = - 1A  
C
BE  
CE  
CE  
CB  
CC  
f
= - 5V, I = - 1A  
15  
300  
0.25  
0.53  
1.61  
MHz  
pF  
µs  
T
C
C
= - 10V, f = 1MHz  
= 20V  
ob  
ON  
F
t
t
I
= 1A = 10·I = - 10·I  
Fall Time  
C
B1 B2  
µs  
R = 20Ω  
L
t
Storage Time  
µs  
STG  
* Pulse Test: PW = 20µs  
h
Classificntion  
FE  
Classification  
O
Y
h
60 ~ 120  
100 ~ 200  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, June 2001  
Typical Characteristics  
-10  
1000  
100  
10  
-9  
VCE=-5V  
IB=-240mA  
IB=-200mA  
IB=-160mA  
IB=-120mA  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
-0  
IB=-80mA  
IB=-40mA  
IB=-20mA  
1
-0.1  
-0  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-1  
-10  
-100  
VCE(V),COLLECTOR EMITTER VOLTAGE  
IC(A) COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
-10  
-10  
IC=10IB  
IC=10IB  
-1  
-1  
-0.1  
-0.01  
-0.1  
-0.1  
-0.1  
-1  
-10  
-1  
-10  
IC(A) COLLECTOR CURRENT  
IC(A) COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter Saturation Voltage  
-8  
1000  
VCE=-5V  
-7  
f=1MHz  
-6  
-5  
-4  
-3  
-2  
-1  
-0  
100  
10  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
-1.4  
-1.6  
-1  
-10  
-100  
VBE(V), BASE EMITTER VOLTAGE  
VCB(V) COLLECTOR BASE VOLTAGE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Collector Output Capacitance  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, June 2001  
Typical Characteristics (Continued)  
-100  
-10  
-100  
VCE=-5V  
IC MAX. (Pulse)  
IC MAX. (DC)  
-10  
-1  
-0.1  
-0.01  
*SINGLE NONREPETITIVE  
PULSE TC=25[oC]  
-1  
-0.1  
-1  
-10  
-0.1  
-1  
-10  
-100  
IC(A) COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 7. Current Gain Bandwidth Product  
Figure 8. Safe Operating Area  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 9. Current Gain Bandwidth Product  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, June 2001  
Package Demensions  
TO-3P  
15.60 ±0.20  
4.80 ±0.20  
13.60 ±0.20  
9.60 ±0.20  
+0.15  
ø3.20 ±0.10  
1.50  
–0.05  
2.00 ±0.20  
3.00 ±0.20  
1.00 ±0.20  
1.40 ±0.20  
+0.15  
–0.05  
0.60  
5.45TYP  
5.45TYP  
[5.45 ±0.30  
]
[5.45 ±0.30]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
Product Folder - Fairchild P/N KSB817 - PNP Planar Silicon Transistor  
SEARCH | Parametric | Cross Reference  
sp  
Fairchild Semiconductor  
GO  
space  
Product Folders and  
Applica  
spa  
sp
a
s
pa  
Home >> Find products >>  
find products  
spa  
sp
a
s
pa  
KSB817  
Related Links  
Products groups  
PNP Planar Silicon Transistor  
Analog and Mixed  
Signal  
Discrete  
Interface  
Logic  
Microcontrollers  
Non-Volatile  
Memory  
Optoelectronics  
Markets and  
applications  
New products  
Product selection and  
parametric search  
Cross-reference  
search  
Request samples  
Dotted line  
Datasheet  
Download this  
datasheet  
Contents  
Features | Applications | Product  
status/pricing/packaging  
How to order products  
Dotted line  
Product Change Notices  
(PCNs)  
PDF  
Dotted line  
Support  
Features  
e-mail this datasheet  
[E-  
Dotted line  
Distributor and field sales  
representatives  
High Current Capability  
High Power Dissipation  
Complementary to KSD1047  
Dotted line  
Quality and reliability  
This page  
Print version  
Dotted line  
Design tools  
back to top  
Applications  
technical information  
buy products  
Audio Power Amplifier  
Car Booster Output Amplifier  
DC to DC Converter  
technical support  
my Fairchild  
company  
back to top  
Product status/pricing/packaging  
Product  
Product status  
Lifetime Buy  
Pricing*  
$0.93  
Package type  
Leads  
Packing method  
KSB817YTU  
TO-3P  
3
RAIL  
* 1,000 piece Budgetary Pricing  
back to top  
Home | Find products | Technical information | Buy products |  
Support | Company | Contact us | Site index | Privacy policy  
© Copyright 2002 Fairchild Semiconductor  

相关型号:

KSB834

PNP (LOW FREQUENCY POWER AMPLIFIER)
SAMSUNG

KSB834

Low Frequency Power Amplifier
FAIRCHILD

KSB834J69Z

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

KSB834W

Low Frequency Power Amplifier
FAIRCHILD

KSB834WYTM

Low Frequency Power Amplifier
FAIRCHILD

KSB834WYTM

PNP外延硅晶体管
ONSEMI

KSB834Y

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

KSB834YTU

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

KSB906

Low Frequency Power Amplifier
FAIRCHILD

KSB906

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
SAMSUNG

KSB906-O

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
SAMSUNG

KSB906-Y

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
SAMSUNG