KSC1674CY [FAIRCHILD]
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92,;
| 型号： | KSC1674CY |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, 放大器 晶体管 |
| 文件： | 总9页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC1674
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Oscillator
•
•
•
High Current Gain Bandwidth Product : f =600MHz (TYP.)
T
High Power Gain : G =22dB at f=100MHz
PE
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1. Emitter 2. Base 3. Collector
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
20
CBO
V
CEO
EBO
4
V
I
20
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
250
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
30
20
4
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =10µA, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I =5mA, I =0
C B
I =10µA, I =0
V
E
C
I
I
V
=30V, I =0
0.1
0.1
µA
µA
CBO
EBO
CB
EB
CE
CE
E
Emitter Cut-off Current
V
V
V
=4V, I =0
C
h
DC Current Gain
=6V, I =1mA
40
240
FE
C
V
V
(on)
Base-Emitter On Voltage
=6V, I =1mA
0.72
0.1
600
1.2
12
V
V
BE
CE
C
(sat)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I =10mA, I =1mA
0.3
C
B
f
V
=6V, I =1mA
400
MHz
pF
ps
T
CE
CB
CE
C
C
C
V
V
=6V, I =0, f=1MHz
E
ob
c·rbb’
Collector-Base Time Constant
=6V, I =1mA
15
C
f=31.9MHz
NF
Noise Figure
Power Gain
V
=6V, I =1mA
3.0
22
5.0
dB
dB
CE
C
R =50Ω, f=100MHz
S
G
V
=6V, I =1mA,
18
PE
CE
C
f=100MHz
h
Classification
FE
Classification
R
O
Y
h
40 ~ 80
70 ~ 140
120~ 240
FE
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
20
18
16
14
12
10
8
1000
100
10
VCE = 6V
IB = 110uA
IB = 100uA
IB = 90uA
IB = 80uA
IB = 70uA
IB = 60uA
IB = 50uA
IB = 40uA
IB = 30uA
IB = 20uA
IB = 10uA
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
VCE = 6V
10
IC=10IB
VBE(sat)
1
1
VCE(sat)
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
VBE[V],BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
10000
1000
100
f=1MHz
IE=0
VCE=6V
1
10
0.1
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
1000
100
10
100
VCE = 6V
VCE = 6V
100MHz
10
1
bie
100MHz
10.7MHz
10.7MHz
gie
gfe
bie
-bfe
gfe
-bfe
gie
0.1
0.01
1
0.1
1
10
100
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 7. Input Admittance (yie) vs. Collector Current
Figure 8. Forward Transfer Admittance (yfe) vs.
Collector Current
1
-gre
10.7MHz
100MHz
VCE = 6V
boe
VCE = 6V
0.0
0.1
0.2
0.3
0.4
0.5
100MHz
goe
-gre
-bre
10.7MHz
100MHz
goe
boe
10.7MHz
0.1
10.7MHz
100MHz
-gre
0.01
0.1
0.1
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 9. Reverse Transfer Admittance (yre) vs.
Collector Current
Figure 10. Output Admittance (yoe) vs. Collector
Current
1000
1000
VCB = 6V
10.7MHz
10.7MHz
100MHz
gib
-gfb
100MHz
100
100
100MHz
gib
bfb
-gfb
10.7MHz
-bib
10.7MHz
-bib
bfb
10
10
1
0.1
1
0.1
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 11. Input Admittance (yib) vs. Collector Current
Figure 12. Forward Transfer Admittance (yfb) vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
1
10
VCE = 6V
IC = 1mA
VCB = 6V
-brb
100MHz
10.7MHz
1
-grb
-bre
0.1
10.7MHz
-gre
-brb
0.1
-grb
100MHz
0.01
0.1
0.01
1
10
100
10
100
1000
f[MHz], FREQUENCY
IC[mA], COLLECTOR CURRENT
Figure 13. Reverse Transfer Admittance (yrb) vs.
Collector Current
Figure 14. Reverse Transfer Admittance (yre) vs.
Frequency
1000
10
VCE = 6V
IC = 1mA
VCE = 6V
IC = 1mA
boe
100
1
gfe
-bfe
10
0.1
goe
1
10
0.01
10
100
1000
100
1000
X axis title
IC[mA], COLLECTOR CURRENT
Figure 15. Forward Transfer Admittance (yfe) vs.
Frequency
Figure 16. Output Admittance (yoe) vs. Frequency
30
100
VCE = 6V
IC = 1mA
VCE=6V
25
f=100MHz
20
10
Gpe
bie
15
10
gie
1
5
NF
0
0.1
0.1
1
10
10
100
1000
IE[mA], EMITTER CURRENT
f[MHz], FREQUENCY
Figure 17. Power Gain and Noise Figure vs. Emitter
Current
Figure 18. Input Admittance (yie) vs. Frequency
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
Product Folder - Fairchild P/N KSC1674 - NPN Epitaxial Silicon Transistor
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●
High Current Gain Bandwith Product
Quality and reliability
:f = 600MHz (TYP.)
T
This page
Print version
High Power Gain : G =22dB at f=
PE
Design tools
100MHz
Suffix “-C” means Center Collector (1.
Emitter 2. Collector 3. Base)
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TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Oscillator
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Product
KSC1674COBU
KSC1674RTA
KSC1674OBU
KSC1674RBU
KSC1674YBU
KSC1674CYTA
KSC1674CYBU
KSC1674OTA
Product status
Full Production
Full Production
Full Production
Full Production
Full Production
Full Production
Full Production
Full Production
Pricing*
Package type Leads
Packing method
BULK
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
$0.05
$0.05
$0.05
$0.05
$0.05
$0.05
$0.05
$0.05
3
3
3
3
3
3
3
3
TAPE REEL
BULK
BULK
BULK
TAPE REEL
BULK
TAPE REEL
Product Folder - Fairchild P/N KSC1674 - NPN Epitaxial Silicon Transistor
TO-92
TO-92
KSC1674COTA
KSC1674YTA
Full Production
Full Production
$0.05
$0.05
3
3
TAPE REEL
TAPE REEL
* 1,000 piece Budgetary Pricing
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