KSC2223D87Z [FAIRCHILD]
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN;
| 型号： | KSC2223D87Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN |
| 文件： | 总5页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC2223
High Frequency Amplifier
•
•
•
•
Very small size to assure good space factor in Hybrid IC applications
f =600MHz (TYP.) at I =1mA
T
C
C
=1pF (TYP.) at V =6V
OB
CB
NF=3dB (TYP.) at f=100MHz
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
30
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
20
V
CEO
EBO
4
V
I
20
mA
mW
°C
C
P
Collector Dissipation
Junction Temperature
Storage Temperature
150
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector Cut-off Current
DC Current Gain
Test Condition
Min.
Typ.
Max.
0.1
Units
I
V
V
30V, I =0
µA
CBO
CB=
E
h
=6V, I =1mA
40
90
0.1
1
180
0.3
FE
CE
C
V
(sat)
Collector Emitter Saturation Voltage
Output Capacitance
I =10mA, I =1mA
V
pF
CE
C
B
C
V
=6V, I =0, f=1MHz
E
ob
CB
CE
CB
f
Current Gain Bandwidth Product
Time Constant
V
V
=6V, I =1mA
400
600
12
MHz
ps
T
C
C
=6V, I =1mA
C
c·rbb
f=31.9MHz
NF
Noise Figure
V
=6V, I =1mA
3
dB
CE
C
f=100MHz, R =50Ω
S
h
Classification
FE1
Classification
R
O
Y
h
40 ~ 80
60 ~ 120
90 ~ 180
FE
Marking
H5O
h
grade
FE
©2001 Fairchild Semiconductor Corporation
Rev. A1, April 2001
Typical Characteristics
10
1000
100
10
VCE = 6V
IB = 80µA
8
IB = 70µA
IB = 60µA
6
IB = 50µA
IB = 40µA
4
IB = 30µA
IB = 20µA
2
IB = 10µA
0
0
4
8
12
16
20
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain 1
10
1000
100
10
IC = 1mA
Ic = 10 IB
VBE(sat)
1
0.1
VCE(sat)
0.01
0.1
1
10
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain 2
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
VCE = 6V
VCB = 6V
f = 31.9MHz
100
10
1
10
0.1
0.0
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
VBE[V], BASE-EMITTER VOLTAGE
IE[mA], EMITTER CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Collector-Base Time Constant
©2001 Fairchild Semiconductor Corporation
Rev. A1, April 2001
Typical Characteristics (Continued)
10000
1000
100
24
VCE = 6V
VCE = 6V
f = 100MHz
20
16
12
8
4
0
0.1
1
10
0.1
1
10
100
IE[mA], EMITTER CURRENT
IE[mA], EMITTER CURRENT
Figure 7. Noise Figure
Figure 8. Current Gain Bandwidth Product
10
200
180
160
140
120
100
80
f = 1MHz
Cie (IC=0)
Cob (IE=0)
1
60
40
20
0.1
0.1
0
1
10
100
0
25
50
75
100
125
150
175
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Ta[oC], AMIBIENT TEMPERATURE
Figure 9. Input and Output Capacitance
Figure 10. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, April 2001
Package Demensions
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, April 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
PACMAN™
SuperSOT™-3
ACEx™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Star* Power™
Stealth™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H1
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