KSC2715OL99Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | KSC2715OL99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC2715
FM RADIO AMP, MIX, CONV, OSC, IF AMP
•
High Power Gain : G =30dB
PE
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
35
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
30
V
CEO
EBO
4
V
I
50
mA
mW
°C
C
P
Collector Dissipation
Junction Temperature
Storage Temperature
150
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
Min.
Typ.
Max.
0.1
1
Units
I
I
V
V
V
=35V, I =0
µA
µA
CBO
EBO
CB
EB
CE
E
=4V, I =0
C
h
=12V, I =2mA
40
240
0.4
1.0
400
3.2
33
FE
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Current Gain Bandwidth Product
Output Capacitance
I =10mA, I =1mA
V
V
CE
BE
C
B
I =10mA, I =1mA
C
B
f
V
=10V, I =1mA
100
27
MHz
pF
dB
T
CE
CB
C
C
V
=10V, I =0, f=1MHz
2
ob
E
G
Power Gain
V
=6V, I =1mA
30
PE
CE
C
f=10.7MHz
h
Classification
FE
Classification
R
O
Y
h
40 ~ 80
70 ~ 140
120 ~ 240
FE
Marking
B1O
h
grade
FE
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
10
8
1000
100
10
IB = 90µA
IB = 80µA
VCE=12V
IB = 70µA
IB = 60µA
6
IB = 50µA
IB = 40µA
4
IB = 30µA
IB = 20µA
IB = 10µA
2
0
0
2
4
6
8
10
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
32
28
24
20
16
12
8
VCE=12V
IC=10IB
1
VBE(sat)
VCE(sat)
0.1
4
0.01
0.1
0
0.0
1
10
0.2
0.4
0.6
0.8
1.0
1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
1000
100
10
f = 1MHz
IE=0
VCE = 10V
1
0.1
1
10
1
10
100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
相关型号：
KSC2715OMTF
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
FAIRCHILD
KSC2715OS62Z
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
KSC2715RD87Z
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
KSC2715RL99Z
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
KSC2715RMTF
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
FAIRCHILD
KSC2715RS62Z
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
KSC2715S62Z
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
KSC2715YD87Z
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
KSC2715YL99Z
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明