KSC2786O [FAIRCHILD]
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92S, 3 PIN;
| 型号： | KSC2786O |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92S, 3 PIN 振荡器 晶体 放大器 小信号双极晶体管 射频小信号双极晶体管 电视 |
| 文件： | 总7页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC2786
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Oscillator
•
•
High Current Gain Bandwidth Product : f =600MHz (TYP)
T
High Power Gain : G =22dB at f=100MHz
PE
TO-92S
1.Emitter 2. Collector 3. Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
30
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
20
V
CEO
EBO
4
V
I
20
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
250
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
30
20
4
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =10µA, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I =5mA, I =0
C B
I =10µA, I =0
V
E
C
I
I
V
=30V, I =0
0.1
0.1
240
µA
µA
CBO
EBO
CB
EB
CE
CE
E
Emitter Cut-off Current
V
V
V
=4V, I =0
C
h
DC Current Gain
=6V, I =1mA
40
FE
C
V
V
(on)
Base-Emitter On Voltage
=6V, I =1mA
0.72
0.1
600
1.2
12
V
V
BE
CE
C
(sat)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I =10mA, I =1mA
0.3
C
B
f
V
=6V, I =1mA
400
MHz
pF
ps
T
CE
CB
CE
C
C
C
V
V
=6V, I =0, f=1MHz
E
ob
c·rbb’
Collector-Base Time Constant
=6V, I =1mA
15
C
f=31.9MHz
NF
Noise Figure
Power Gain
V
=6V, I =1mA
3.0
22
5.0
dB
dB
CE
C
R =50Ω, f=100MHz
S
G
V
=6V, I =1mA
18
PE
CE
C
f=100MHz
h
Classification
FE
Classification
R
O
Y
h
40 ~ 80
70 ~ 140
120 ~ 240
FE
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Typical Characteristics
20
18
16
14
12
10
8
VCE = 6 V
IB = 110µA
10
IB = 100µA
IB = 90µA
IB = 80µA
IB = 70µA
IB = 60µA
IB = 50µA
IB = 40µA
1
6
IB = 30µA
IB = 20µA
IB = 10µA
4
2
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
18
20
VBE [V], BASE-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
Figure 2. Base-Emitter On Voltage
10000
1000
VCE = 6V
VCE = 6V
1000
100
10
100
10
1
10
100
1
10
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. f - I
T
C
10
10
IC = 10 IB
f = 1MHz
IE = 0
VBE(sat)
1
1
0.1
VCE(sat)
0.01
0.1
0.1
1
10
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC [mA], COLLECTOR CURRENT
Figure 5. Saturation Voltage
Figure 6. Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Typical Characteristics (Continued)
100
1000
100
10
VCE = 6 V
10.7 MHz
VCE = 6 V
100 MHz
10
100 MHz
100 MHz
bie
10.7 MHz
gie
gfe
1
10.7 MHz
bie
-bfe
gfe
gie
-bfe
0.1
0.01
0.1
1
0.1
1
10
100
1
10
100
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 7. yie - f
Figure 8. yfe - f
1
-gre
-gre
10.7 MHz
100 MHz
VCE = 6 V
0.0
VCE = 6 V
100 MHz
boe
-bre
10.7 MHz
100 MHz
10.7 MHz
0.1
0.2
0.3
0.4
0.5
goe
0.1
10.7 MHz
boe
goe
100 MHz
-bre
0.01
0.1
0.1
1
10
100
1
10
100
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 9. yre - f
Figure 10. yoe - f
1000
100
10
1000
100
10
VCE = 6 V
VCE = 6 V
10.7 MHz
10.7 MHz
100 MHz
gfb
100 MHz
gib
100 MHz
100 MHz
gib
gfb
10.7 MHz
10.7 MHz
-bib
bfb
-bib
bfb
1
0.1
1
0.1
1
10
100
1
10
100
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 11. yib - f
Figure 12. yfb - f
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Typical Characteristics (Continued)
1
10
VCE = 6 V
V
= 6 V
ICC=E 1 mA
-brb
100 MHz
10.7 MHz
1
-grb
-bre
0.1
10.7 MHz
-brb
0.1
-gre
100 MHz
-grb
0.01
0.1
0.01
1
10
100
10
100
1000
f [MHz], FREQUENCY
IC [mA], COLLECTOR CURRENT
Figure 13. yrb - f
Figure 14. yre - f
1000
100
10
10
VCE = 6 V
IC = 1 mA
V
= 1 V
ICC=E 1 mA
1
gfe
boe
0.1
-bfe
goe
1
0.01
10
100
1000
10
100
1000
f [MHz], FREQUENCY
f [MHz], FREQUENCY
Figure 15. yfe - f
Figure 16. yoe - f
100
10
1
25
VCE = 6 V
IC = 1 mA
VCE = 6 V
f = 100 MHz
GPE
20
15
10
5
bie
gie
NF
0.1
0
10
100
1000
0.1
1
10
IC [mA], COLLECTOR CURRENT
f [MHz], FREQUENCY
Figure 17. Power Gian & NF
Figure 18. yie - f
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Typical Characteristics (Continued)
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Package Dimensions
TO-92S
4.00 ±0.20
2.31 ±0.20
0.66 MAX.
0.49 ±0.10
1.27TYP
1.27TYP
[1.27±0.20]
+0.10
–0.05
[1.27±0.20]
0.35
3.72 ±0.20
2.86 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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FACT™
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POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
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MSX™
MSXPro™
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OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
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TruTranslation™
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UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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