KSC3502C [FAIRCHILD]
CRT Display, Video Output; CRT显示器，视频输出
| 型号： | KSC3502C |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | CRT Display, Video Output |
| 文件： | 总5页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC3502
CRT Display, Video Output
•
•
High Voltage : V
Low Reverse Transfer Capacitance: C =1.2pF @ V =30V
=200V
CEO
re
CB
TO-126
1. Emitter 2.Collector 3.Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
200
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
V
V
CBO
CEO
EBO
200
5
V
I
I
100
mA
mA
W
C
200
CP
P
P
Collector Dissipation (T =25°C)
5
C
C
Collector Dissipation (T =25°C)
1.2
W
C
a
T
T
Junction Temperature
Storage Temperature
150
°C
°C
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
I
= 10µA, I = 0
200
200
5
CBO
CEO
EBO
C
E
BV
BV
= 1mA, I = 0
V
C
B
I = 10µA, I = 0
V
E
C
I
I
V
V
V
= 150V, I = 0
0.1
0.1
320
0.6
1
µA
µA
CBO
EBO
CB
EB
CE
E
Emitter Cut-off Current
= 4V, I = 0
C
h
DC Current Gain
= 10V, I = 10mA
40
FE
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I
I
= 20mA, I = 2mA
V
V
CE
C
C
B
= 20mA, I = 2mA
BE
B
f
V
V
V
= 30V, I = 10mA
150
1.7
1.2
MHz
pF
T
CE
CB
CB
C
C
C
= 30V, f= 1MHz
= 30V, f= 1MHz
ob
re
Reverse Transfer Capacitance
pF
h
Classification
FE
Classification
C
D
E
F
h
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320
FE
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
20
10
8
A
A
60
IB = 1
80
70
A
IB
IB
=
=
IB
IB
IB
=
=
=
140
120
100
A
A
16
12
8
0
IB = 6
A
A
0
A
IB = 5
6
0
A
A
IB = 4
A
IB
IB
IB
IB
=
=
=
=
80
60
4
IB
=
30
A
40
20
A
A
= 20
= 10
A
A
IB
IB
4
2
IB = 0
IB = 0
0
0
0
2
4
6
8
10
0
20
40
60
80
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
10
1000
IC = 10 IB
VCE = 10V
1
VBE(sat)
100
10
1
0.1
VCE(sat)
0.01
0.1
1
10
100
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
160
100
VCE = 10V
f = 1MHz
140
120
100
80
10
60
1
40
20
0
0.0
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
100
1000
100
10
f=1MHz
VCE = 30V
10
1
1
0.1
0.1
0.1
1
10
100
1000
1
10
100
1000
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 7. Reverse Transfer Capacitance
Figure 8. Current Gain Dandwidth Product
8
7
6
5
4
1000
IC MAX. (Pulse)
IC MAX.
100
10
1
1ms
10ms
Tc
3
2
Ta
1
0
0
25
50
75
100
125
150
175
1
10
100
1000
T[oC], TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Safe Operating Area
Figure 10. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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