KSC5027 [FAIRCHILD]
High Voltage and High Reliability; 高电压和高可靠性
| 型号： | KSC5027 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage and High Reliability |
| 文件： | 总5页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC5027
High Voltage and High Reliability
•
•
High Speed Switching
Wide SOA
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
1100
V
V
CBO
CEO
EBO
800
7
V
I
I
3
10
A
C
A
CP
B
I
1.5
A
P
Collector Dissipation ( T =25°C)
50
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
I
I
I
= 1mA, I = 0
1100
800
7
V
V
V
V
CBO
CEO
EBO
C
C
E
E
BV
BV
= 5mA, R =∞
BE
= 1mA, I = 0
C
V
(sus)
I = 1.5A, I = -I = 0.3A
800
CEX
C
B1
B2
L = 2mH, Clamped
I
I
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
V
= 800V, I = 0
10
10
40
µA
µA
CBO
EBO
CB
EB
E
= 5V, I = 0
C
h
h
V
V
= 5V, I = 0.2A
10
8
FE1
FE2
CE
CE
C
= 5V, I = 1A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
I
I
= 1.5A, I = 0.3A
2
V
V
CE
C
C
B
= 1.5A, I = 0.3A
1.5
BE
B
C
V
= 10V, I = 0, f = 1MHz
60
15
pF
MHz
µs
ob
CB
E
f
t
t
t
Current Gain Bandwidth Product
Turn ON Time
V
V
I
= 10V, I = 0.2A
T
CE
C
= 400V
0.5
3
ON
CC
= 5I = -2.5I = 2A
Storage Time
C
B1 B2
µs
STG
F
R = 200Ω
L
Fall Time
0.3
µs
h
Classification
FE
Classification
N
R
O
h
10 ~ 20
15 ~ 30
20 ~ 40
FE1
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1000
100
10
VCE = 5V
IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA
IB = 80mA
IB = 60mA
IB = 50mA
IB = 40mA
IB = 30mA
IB = 20mA
IB = 10mA
IB = 0
1
0.01
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IC = 5 IB
VCE = 5V
VBE(sat)
1
VCE(sat)
0.1
0.01
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
10
VCC = 400V
5.IB1 = -2.5.IB2 = IC
tSTG
ICMAX.(Pulse)
ICMAX(Continuous)
1
1
tON
tF
0.1
0.1
0.01
1E-3
0.01
0.1
1
10
1
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
100
80
70
60
50
40
30
20
10
0
IB2 = -0.3A
10
1
0.1
0.01
10
100
1000
10000
0
25
50
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[oC], CASE TEMPERATURE
Figure 7. Reverse Bias Operating Area
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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