KSC5039H2TU [FAIRCHILD]
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;
| 型号： | KSC5039H2TU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
| 文件： | 总6页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC5039
High Voltage Power Switch Switching
Application
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
800
V
V
CBO
CEO
EBO
400
7
V
I
I
5
A
C
10
A
CP
B
I
3
70
A
P
Collector Dissipation (T =25°C)
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Typ.
Max.
Units
BV
I
I
I
= 1mA, I = 0
800
400
7
V
V
CBO
CEO
EBO
C
C
C
E
BV
BV
= 5mA, I = 0
B
= 1mA, I =0
C
I
I
V
V
V
= 500V, I = 0
10
10
µA
µA
CBO
EBO
CB
EB
CE
E
= 7V, I = 0
C
h
* DC Current Gain
= 5V, I = 0.3A
10
FE
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I
I
= 2.5A, I = 0.5A
1.5
2.0
V
V
CE
C
C
B
= 2.5A, I = 0.5A
BE
B
f
V
V
V
= 5V, I = 0.1A
10
40
MHz
pF
µs
T
CE
CB
CC
C
C
= 10V , f = 1MHz
ob
t
t
t
Turn ON Time
=150V, I = 2.5A
1
3
ON
C
I
= -I = 0.5A
Storage Time
B1
B2
µs
STG
F
R = 60Ω
L
Fall Time
0.8
µs
* Plus test: PW=300µs, Duty Cycle=2% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
2.0
1000
100
10
IB = 200mA
IB = 160mA
VCE = 5V
IB = 180mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
IB = 20mA
1
0.01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VCE = 5V
IC = 5 IB
VBE(sat)
1
VCE(sat)
0.1
0.01
0.01
0.1
1
10
0.0 0.1 0.2
0.3 0.4 0.5 0.6 0.7
0.8 0.9 1.0 1.1 1.2
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitte On Voltage
1000
100
10
f = 1MHz
IE = 0
VCE = 10V
fREF = 10MHz
100
10
1
1
0.1
0.01
1
10
100
1000
0.01
0.1
1
VCB[V], COLLECTOR BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
100
10
10
VCC = 150V
IC = 5IB1 = -5IB2
tSTG
50µs
IC(max).(Pulse)
IC(max)(DC)
1
1
tF
0.1
0.1
0.01
0.01
0.1
1
10
100
1000
10000
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 7. Switching Time
Figure 8. Safe Operating Area
40
35
30
25
20
15
10
5
100
L=200uH
IB2 = -1A
10
1
0.1
0.01
0
0
25
50
75
100
125
150
175
10
100
1000
10000
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operaing Area
Figure 10. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
file:///E|/new/html/KSC5039.html
SEARCH | Parametric | Cross Reference
sp
Fairchild Semiconductor
GO
Home >> Find products >>
find products
KSC5039
Related Links
Products groups
NPN Silicon Transistor
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
Datasheet
Download this
datasheet
Contents
Applications | Product
status/pricing/packaging
How to order products
Product Change Notices
(PCNs)
PDF
Support
Applications
e-mail this datasheet
[E-
Distributor and field sales
representatives
High Voltage Power Switch Switching
Quality and reliability
This pagePrint version
Design tools
back to top
Product status/pricing/packaging
Product
KSC5039TU
KSC5039H2TU
KSC5039
Product status
Full Production
Full Production
Full Production
Full Production
Full Production
Full Production
Pricing*
Package type
TO-220
Leads
Packing method
RAIL
technical information
buy products
$0.51
$0.51
$0.51
$0.51
$0.51
$0.51
3
3
3
3
3
3
TO-220
RAIL
TO-220
BULK
technical support
my Fairchild
KSC5039H2
KSC5039H1
KSC5039H1TU
TO-220
BULK
TO-220
BULK
company
TO-220
RAIL
* 1,000 piece Budgetary Pricing
back to top
Home | Find products | Technical information | Buy products |
Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
相关型号：
KSC5039J69Z
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5039TU
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5042J69Z
Power Bipolar Transistor, 0.1A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5042MSTU
Power Bipolar Transistor, 0.1A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
FAIRCHILD
KSC5042TU
Power Bipolar Transistor, 0.1A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5047TU
Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明