KSC5803DTBTU [FAIRCHILD]
Power Bipolar Transistor, 12A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN;
| 型号： | KSC5803DTBTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 12A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总7页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC5803D
High Voltage Color Display Horizontal
Deflection Output
(Damper Diode Built In)
•
•
•
•
High Breakdown Voltage : BV
=1500V
CBO
High Speed Switching : t =0.1µs (Typ.)
F
Wide S.O.A
For C-Monitor(85KHz)
TO-3PF
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
NPN Triple Diffused Planar Silicon Transistor
50
Ω typ.
E
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
1500
800
6
Units
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
CBO
CEO
EBO
V
V
V
V
I
I
12
A
C
24
A
CP
P
Collector Dissipation (T =25°C)
70
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
Min.
Typ.
Max.
1
Units
I
I
I
V
V
V
= 1400V, V =0
mA
µA
CES
CBO
EBO
CE
CB
EB
BE
= 800V, I = 0
10
E
= 4V, I = 0
50
250
mA
C
h
h
V
V
= 5V, I = 1A
15
7
40
10
FE1
FE2
CE
CE
C
= 5V, I = 8A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
I
I
= 8A, I = 2A
3
V
V
CE
C
C
B
= 8A, I = 2A
1.5
4
BE
B
t
t
V
= 200V, I = 7A
µs
µs
STG
F
CC
C
I
= 1.4A, I = - 2.8A
Fall Time
B1
B2
0.3
R = 28.6Ω
L
V
Damper Diode Turn On Voltage
I = 8A
2
V
F
F
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Item
Max
Unit
R
Thermal Resistance, Junction to Case
1.79
°C/W
θjC
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
100
10
1
10
8
VCE=5V
6
4
2
IB = 0
0
0.1
1
10
0
2
4
6
8
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
12
10
8
VCE=5V
1
6
IC = 5IB
IC = 3IB
0.1
4
2
0.01
0.1
0
0.0
1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VBE[V], BASE EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
100
10
tSTG
DC
1
1
tF
0.1
0.01
RESISTIVE LOAD
VCC = 200V
IC = 7A
IB1 = 1.4A
0.1
SINGLE PULSE
℃
TC = 25
2000
0.1
1
10
1
10
100
1000
- IB2[A], BASE CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
℃
TC[ ], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-3PF
5.50 ±0.20
3.00 ±0.20
15.50 ±0.20
ø3.60 ±0.20
(1.50)
°
10
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
3.30 ±0.20
4.00 ±0.20
+0.20
–0.10
0.75
5.45TYP
[5.45 ±0.30
5.45TYP
[5.45 ±0.30]
+0.20
–0.10
0.90
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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●
High Breakdown Voltage:
BV =1500V
Quality and reliability
CBO
This pagePrint version
●
High Speed Switching; t =0.1µs (Typ.)
F
Design tools
●
●
Wide S.O.A.
For C-Monitor (85KHz)
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High Voltage Color Display Horizontal
Deflection Output
(Built In Damper Diode)
company
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Product
Product status
Pricing*
$1.74
Package type Leads
TO-3PF
Packing method
KSC5803DTBTU
Lifetime Buy
3
RAIL
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
Product Folder - Fairchild P/N KSC5803D - NPN Triple Diffused Planar Silicon Transistor
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