KSD135 [FAIRCHILD]
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin;
| 型号： | KSD135 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin 局域网 开关 晶体管 |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD135/137/139
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LINEAR AND
SWITCHING APPLICATIONS
TO-126
· Complement to BD136 and BD140 respectively
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector Base Voltage : BD135
: BD137
Symbol
VCBO
Rating
45
Unit
V
60
V
: BD139
80
V
Collector Emitter Voltage : BD135
: BD137
VCEO
45
V
60
V
: BD139
80
V
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
VEBO
IC
5
V
1.5
A
IC
3.0
A
1.Emitter 2.Collector3.Base
IB
0.5
A
PC
PC
TJ
12.5
12.5
150
-55~150
W
W
°C
°C
Collector Dissipation (TC=25°C)
Collector Dissipation (TA=25°C)
Junction Temperature
Storage Temperature
TSTG
ELECTRICAL CHARACTERISTICS(TC=25°C)
Characteristic
Collector Emitter Sustaining Voltage : BD135
: BD137
Symbol
Test Condition
Min Typ Max Unit
VCEO(sus)
IC=30mA, IB=0
45
60
80
V
V
: BD139
ICBO
IEBO
hFE1
hFE2
hFE3
VCB=30V, IE=0
V
Collector Cutoff Current
Emitter Cutoff Current
VEB=2V, IC=0
0.1
10
mA
mA
VCE=2V, IC=5mA
VCE=5V, IC=0.5A
VCE=2V,IC=150mA
DC Current Gain
: ALL DEVICE
25
25
40
40
: ALL DEVICE
: BD135
250
160
0.5
1
: BD137, BD139
VCE(Sat)
VBE(on)
IC=500mA, IB=50mA
VCE=2V, IC=0.5A
V
V
Collector Emitter Saturation Voltage
Base Emitter On Voltage
hFE(3) CLASSIFICNTION
Classification
hFE
6
10
16
3
40-100
63-160
100-250
Rev. B
ã
1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
相关型号：
KSD135-10
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD135-16
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD135-6
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD1362
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
SAMSUNG
KSD1362-R
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
SAMSUNG
KSD1362N
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
KSD1362O
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
KSD137
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD137-10
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD137-16
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD137-6
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明