KSD1589_03 [FAIRCHILD]
Low Frequency Power Amplifier Low Speed Switching Industrial Use; 低频功率放大器低速切换使用工业
| 型号： | KSD1589_03 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Low Frequency Power Amplifier Low Speed Switching Industrial Use |
| 文件： | 总4页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD1589
Low Frequency Power Amplifier
Low Speed Switching Industrial Use
•
Complement to KSB1098
TO-220F
1
1.Base 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Equivalent Circuit
C
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Value
Units
V
V
V
150
V
CBO
CEO
EBO
100
V
7
V
B
I
5
8
A
C
I
A
CP
I
0.5
A
B
P
Collector Dissipation (T =25°C)
1.5
W
W
°C
°C
C
a
R1
R2
Collector Dissipation (T =25°C)
20
C
E
R1 8kΩ
R2 0.12kΩ
T
T
Junction Temperature
150
J
Storage Temperature
- 55 ~ 150
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
*DC Current Gain
Test Condition
Min.
Typ.
Max.
1
Units
I
V
= 100V, I = 0
µA
CBO
CB
E
h
h
V
V
= 2V, I = 3A
2K
500
6K
15K
FE1
FE2
CE
CE
C
= 2V, I = 5A
C
V
V
(sat)
(sat)
*Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
I
I
= 3A, I = 3mA
0.9
1.6
1
1.5
2
V
V
CE
C
C
B
= 3A, I = 3mA
BE
B
t
t
t
V
= 50V, I = 3A
µs
µs
µs
ON
CC
C
I
= - I = 3mA
Storage Time
B1
B2
3.5
1.2
stg
f
R = 16.7Ω
L
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
R
O
Y
h
2000 ~ 5000
3000 ~ 7000
5000 ~ 15000
FE1
©2003 Fairchild Semiconductor Corporation
Rev. B, September 2003
Typical Characteristics
5
4
10k
VCE = 2V
1k
3
IB = 0.4mA
2
IB = 0.35mA
100
1
IB = 0.3mA
IB = 0
10
0.001
0
0.1
1
10
0
1
2
3
4
5
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
100
10
1
IC = 1000 IB
1
VBE(sat)
VCE(sat)
0.1
0.01
0.1
0.1
1
10
100
500
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. B, September 2003
Package Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. B, September 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™ LittleFET™
Power247™
SuperSOT™-6
SuperSOT™-8
SyncFET™
ActiveArray™
Bottomless™
CoolFET™
FAST®
MICROCOUPLER™ PowerTrench®
FASTr™
FRFET™
MicroFET™
MicroPak™
QFET®
QS™
TinyLogic®
CROSSVOLT™ GlobalOptoisolator™ MICROWIRE™
QT Optoelectronics™ TINYOPTO™
DOME™
GTO™
HiSeC™
I2C™
ImpliedDisconnect™ OCXPro™
ISOPLANAR™
MSX™
MSXPro™
OCX™
Quiet Series™
RapidConfigure™
RapidConnect™
TruTranslation™
UHC™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
SPM™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
Stealth™
SuperSOT™-3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
result in significant injury to the user.
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I5
相关型号：
KSD1616-L-AP
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
©2020 ICPDF网 联系我们和版权申明