KSD1616AGBU [FAIRCHILD]
NPN Epitaxial Silicon Transistor, 3LD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3), 10000/BULK;
| 型号： | KSD1616AGBU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor, 3LD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3), 10000/BULK |
| 文件： | 总5页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD1616/1616A
Audio Frequency Power Amplifier & Medium
Speed Switching
•
Complement to KSB1116/1116A
TO-92
1. Emitter 2. Collector 3. Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
: KSD1616
: KSD1616A
60
120
V
V
CBO
: KSD1616
: KSD1616A
50
60
V
V
CEO
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
6
V
A
EBO
I
I
1
2
C
A
CP
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
0.75
W
°C
°C
C
T
150
J
T
-55 ~ 150
STG
* PW≤10ms, Duty Cycle < 50%
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Typ.
Max.
100
Units
I
I
V
V
V
=60V, I =0
nA
nA
CBO
EBO
CB
EB
CE
E
=6V, I =0
100
C
h
DC Current Gain
: KSD1616
: KSD1616A
=2V, I =100mA
135
135
81
600
400
FE1
C
h
V
V
=2V, I =1A
C
FE2
CE
CE
V
V
V
(on)
(sat)
(sat)
* Base-Emitter On Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
=2V, I =50mA
600
640
0.15
0.9
700
0.3
1.2
mV
V
BE
CE
BE
C
I =1A, I =50mA
C
B
I =1A, I =50mA
V
C
B
C
V
=10V, I =0, f=1MHz
19
pF
MHz
µs
ob
CE
CE
CC
E
f
t
t
t
Current Gain Bandwidth Product
Turn On Time
V
V
=2V, I =100mA
100
160
0.07
0.95
0.07
T
C
=10V, I =100mA
ON
STG
F
C
I
= -I =10mA
Storage Time
B1
B2
µs
V
(off) = -2~-3V
BE
Fall Time
µs
* Pulse Test: PW<350µs, Duty Cycle≤2% Pulsed
h
Classification
FE1
Classification
Y
G
L
h
135 ~ 270
200 ~ 400
300 ~ 600
FE1
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Typical Characteristics
100
1.0
0.8
0.6
0.4
0.2
0.0
IB = 5.0mA
IB = 4.5mA
IB = 300µA
IB = 3.0mA
IB = 2.5mA
IB = 3.5mA
80
IB = 250µA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 200µA
60
IB = 150µA
40
IB = 100µA
20
IB = 0.5mA
IB = 50µA
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
100
10
10
VCE = 2V
IC = 20 IB
VBE(sat)
1
0.1
VCE(sat)
1
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC[mA], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
10
VCC = -10V
IE=0
IC = 10IB1 = -10IB2
f = 1MHz
1
tSTG
tF
0.1
tON
1
0.01
-0.001
-0.01
-0.1
-1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Switching Time
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Typical Characteristics (Continued)
1000
10
VCE = 2V
100
10
1
1
0.1
0.01
1
10
100
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
200
Ta[oC], AMBIENT TEMPERATURE
Figure 9. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
相关型号：
KSD1616AGD75Z
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
KSD1616AGJ05Z
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
KSD1616AGJ18Z
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
KSD1616AL
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
KSD1616ALBU
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
FAIRCHILD
KSD1616ALD27Z
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明