KSD1691OS [FAIRCHILD]
Low Collector-Emtter Saturation Voltage & Large Collector Current; 低集电极Emtter饱和电压与集电极大电流
| 型号： | KSD1691OS |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Low Collector-Emtter Saturation Voltage & Large Collector Current |
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD1691
Feature
•
•
•
Low Collector-Emtter Saturation Voltage & Large Collector Current
High Power Dissipation: P = 1.3W (T =25°C)
C
a
Complementary to KSB1151
TO-126
1. Emitter 2.Collector 3.Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
60
V
V
CBO
CEO
EBO
60
V
7
V
I
I
I
5
A
C
8
A
CP
B
1
1.3
A
P
P
Collector Dissipation (T =25°C)
W
W
°C
°C
C
a
Collector Dissipation (T =25°C)
20
C
C
T
Junction Temperature
150
J
T
Storage Temperature
- 55 ~ 150
STG
* PW≤10ms, duty Cycle≤50%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
Test Condition
Min.
Typ.
Max.
10
Units
I
V
V
= 50V, I = 0
µA
µA
CBO
CB
EB
E
I
= 7V, I = 0
10
EBO
C
h
h
h
V
V
V
= 1V, I = 0.1A
60
100
50
FE1
CE
CE
CE
C
= 1V, I = 2A
400
FE2
FE3
C
= 1V, I = 5A
C
V
V
(sat)
(sat)
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 2A, I = 0.2A
0.1
0.9
0.2
1.1
0.2
0.3
1.2
1
V
V
CE
C
C
B
= 2A, I = 0.2A
BE
B
t
t
t
V
I
= 10V, I = 2A
µs
µs
µs
ON
CC
C
= - I = 0.2A
Storage Time
B1
B2
2.5
1
STG
F
R = 5Ω
L
Fall Time
* Pulse test: PW≤50µs, duty Cycle≤2% Pulsed
h
Classificntion
FE
Classification
O
Y
G
h
100 ~ 200
160 ~ 320
200 ~ 400
FE 2
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
10
8
1000
100
10
VCE = 2V
VCE = 1V
6
IB = 20mA
4
2
0
IB = 10mA
IB = 0
1
0.01
0.1
1
10
0.4
0.8
1.2
1.6
2.0
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
Ic = 10 IB
Ic(Pulse)MAX
Ic(DC)MAX
1
VBE(sat)
1
0.1
0.1
0.01
1
10
100
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
160
140
120
100
80
10
8
6
4
60
40
2
20
0
0
20
40
60
80
100
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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