KSD1692OSTU [FAIRCHILD]
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin;
| 型号： | KSD1692OSTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD1692
Feature
•
•
•
•
High Dc Durrent Gain
Low Collector Saturation Voltage
Built-in a Damper Diode at E-C
High Power Dissipation : P = 1.3W (Ta=25°C)
C
TO-126
1. Emitter 2.Collector 3.Base
1
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Sym-
bol
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
150
V
V
CBO
CEO
EBO
V
100
V
8
V
I
I
Collector Current (DC)
*Collector Current (Pulse)
3
A
C
5
1.3
A
CP
P
Collector Dissipation (T =25°C)
A
C
a
P
Collector Dissipation (T =25°C)
15
W
W
°C
C
C
T
Junction Temperature
150
J
T
Storage Temperature
- 55 ~ 150
STG
* PW≤10ms, duty Cycle≤50%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
Test Condition
Min.
Typ.
Max.
10
Units
µA
I
V
V
= 100V, I = 0
CBO
EBO
CB
E
I
= 5V, I = 0
2
mA
EB
C
h
V
V
= 2V, I = 1.5A
2K
1K
20K
FE1
CE
CE
C
h
= 2V, I = 3A
C
FE2
V
V
(sat)
(sat)
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 1.5A, I = 1.5mA
0.9
1.5
0.5
2
1.2
2
V
V
CE
BE
C
C
B
= 1.5A, I = 1.5mA
B
t
t
t
V
= 40V, I = 1.5A
µs
µs
µs
ON
CC
C
I
= - I = 1.5mA
Storage Time
B1
B2
STG
F
R = 27Ω
L
Fall Time
1
* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed
h
Classificntion
FE
Classification
O
Y
G
h
2000 ~ 5000
4000 ~ 12000
6000 ~ 20000
FE1
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
5
100000
10000
1000
VCE = 2V
Pulsed
IB = 450uA
IB = 400uA
IB = 350uA
4
3
2
1
0
IB = 300uA
IB = 250uA
IB = 100uA
IB = 50uA
100
0.01
0
1
2
3
4
5
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
1
10
Ic = 1000 IB
Pulsed
Ic(Pulse)
Ic(DC)
1
VBE(sat)
VCE(sat)
0.1
Tc=25oC
Single Pulse
0.1
0.01
0.1
1
10
1
10
100
500
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Areas
20
15
10
5
160
140
120
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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