KSD560YTU [FAIRCHILD]
NPN Epitaxial Silicon Darlington Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL;
| 型号： | KSD560YTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Darlington Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL 晶体 放大器 晶体管 开关 功率放大器 局域网 |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD560
Low Frequency Power Amplifier
•
•
Low Speed Switching Industrial Use
Complement to KSB601
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
150
V
V
CBO
CEO
EBO
100
7
V
I
5
8
A
C
I
I
A
CP
B
0.5
A
P
Collector Dissipation (T =25°C)
1.5
W
W
°C
°C
C
a
P
T
T
Collector Dissipation (T =25°C)
30
C
C
Junction Temperature
150
J
Storage Temperature
- 55 ~ 150
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
*DC Current Gain
Test Condition
Min.
Typ.
Max.
1
Units
I
V
= 100V, I = 0
µA
CBO
CB
E
h
h
V
V
= 2V, I = 3A
2K
500
6K
15K
FE1
FE2
CE
CE
C
= 2V, I = 5A
C
V
V
(sat)
(sat)
*Collector-Emitter Saturation Voltage
*Base-Emitter SaturationVoltage
Turn ON Time
I
I
= 3A, I = 3mA
0.9
1.6
1
1.5
2
V
V
CE
C
C
B
= 3A, I = 3mA
BE
B
t
t
f
V
= 50V, I = 3A
µs
µs
µs
ON
CC
C
I
= - I = 3mA
Storage Time
B1
B2
3.5
1.2
STG
T
R = 16.7Ω
L
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
R
O
Y
h
2000 ~ 5000
3000 ~ 7000
5000 ~ 15000
FE1
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
10000
1000
100
5
VCE = 2V
IB = 0.5mA
4
3
2
1
0
IB = 0.4mA
IB = 0.35mA
IB = 0.3mA
10
0.01
0.1
1
10
0
1
2
3
4
5
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
IC = 1000 IB
VBE(sat)
1
1
0.1
VCE(sat)
0.01
0.1
0.1
1
10
100
1000
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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