KSD882 [FAIRCHILD]

Audio Frequency Power Amplifier; 音频功率放大器
KSD882
型号: KSD882
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Audio Frequency Power Amplifier
音频功率放大器

晶体 放大器 小信号双极晶体管 功率放大器 局域网
文件: 总5页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSD882  
Audio Frequency Power Amplifier  
Low Speed Switching  
Complement to KSB772  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector- Base Voltage  
Collector-Emitter Voltage  
Emitter- Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
40  
V
V
CBO  
CEO  
EBO  
30  
V
5
V
I
I
I
3
A
C
7
A
CP  
B
0.6  
A
P
Collector Dissipation (T =25°C)  
10  
1
W
W
°C  
°C  
C
C
P
Collector Dissipation (T =25°C)  
C
a
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
*DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
Units  
µA  
I
V
V
= 30V, I = 0  
1
1
CBO  
CB  
EB  
E
I
= 3V, I = 0  
µA  
EBO  
C
h
h
V
V
= 2V, I = 20mA  
30  
60  
150  
160  
FE1  
CE  
CE  
C
= 2V, I = 1A  
400  
0.5  
2.0  
FE2  
C
V
V
(sat)  
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
I
= 2A, I = 0.2A  
0.3  
1.0  
90  
V
V
CE  
C
C
B
= 2A, I = 0.2A  
BE  
B
f
V
= 5V, I = 0.1A  
MHz  
pF  
T
CE  
E
C
V
= 10V, I = 0  
45  
ob  
CB  
E
f = 1MHz  
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classificntion  
FE  
Classification  
R
O
Y
G
h
60 ~ 120  
100 ~ 200  
160 ~ 320  
200 ~ 400  
FE2  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
2.0  
1000  
100  
10  
VCE = 2V  
IB = 10mA  
1.6  
IB = 9mA  
IB = 8mA  
1.2  
IB = 7mA  
IB = 6mA  
IB = 5mA  
0.8  
IB = 4mA  
IB = 3mA  
IB = 2mA  
IB = 1mA  
0.4  
0.0  
1E-3  
0.01  
0.1  
1
10  
0
4
8
12  
16  
20  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
1
1000  
100  
10  
IC = 10 IB  
VCE = 5V  
VBE(sat)  
0.1  
VCE(sat)  
0.01  
1E-3  
1
0.01  
1E-3  
0.01  
0.1  
1
10  
0.1  
1
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 3. Base-Emitter Saturation Voltage  
Figure 4. Current Gain Bandwidth Product  
Collector-Emitter Saturation Voltage  
10  
1000  
100  
10  
ICMAX. (pulse)  
IE=0  
f=1MHz  
IC MAX. (DC)  
1
0.1  
0.01  
1
10  
100  
1
10  
100  
VCB[V], COLLECTOR-BASE VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Collector Output Capacitance  
Figure 6. Safe Operating Area  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics (Continued)  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
60  
6
40  
4
20  
2
0
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
TC[oC], CASE TEMPERATURE  
Figure 7. Derating Curve Of Safe Operating Areas  
Figure 8. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-126  
8.00 ±0.30  
3.25 ±0.20  
ø3.20 ±0.10  
(1.00)  
(0.50)  
0.75 ±0.10  
1.75 ±0.20  
1.60 ±0.10  
0.75 ±0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28±0.20]  
2.28TYP  
[2.28±0.20]  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  

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