KSE701 [FAIRCHILD]
Monolithic Construction With Built-in Base- Emitter Resistors; 整体结构采用内置基地 - 发射极电阻
| 型号： | KSE701 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Monolithic Construction With Built-in Base- Emitter Resistors |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
FE C
Complement to KSE800/801/802/803
•
•
High DC Current Gain : h = 750 (Min.) @ I = -1.5 and -2.0A DC
TO-126
1
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Equivalent Circuit
C
Sym-
bol
Unit
s
Parameter
Value
V
Collector- Base Voltage : KSE700/701
: KSE702/703
- 60
- 80
V
V
CBO
CEO
EBO
B
V
Collector-Emitter Voltage : KSE700/701
: KSE702/703
- 60
- 80
V
V
V
I
Emitter- Base Voltage
Collector Current
Base Current
- 5
- 4
V
A
R1
R2
C
I
- 0.1
A
B
E
R1 10 k Ω
R2 0.6 k Ω
P
Collector Dissipation (T =25°C)
40
W
°C
°C
C
C
T
Junction Temperature
Storage Temperature
150
J
T
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Max. Units
BV
Collector-Emitter Breakdown Voltage
: KSE700/701
CEO
I
= - 10mA, I = 0
-60
-80
V
V
C
B
: KSE702/703
I
I
I
Collector Cut-off Current
: KSE700/701
CEO
V
V
= - 60V, I = 0
= - 80V, I = 0
B
-100
-100
µA
µA
CE
CE
B
: KSE702/703
Collector Cut-off Current
V
V
= Rated BV
= Rated BV
, I = 0
-100
-500
µA
µA
CBO
CB
CB
CEO
CEO
E
, I = 0
E
@T = 100°C
C
Emitter Cut-off Current
V
= - 5V, I = 0
-2
mA
EBO
BE
C
h
DC Current Gain
: KSE700/702
: KSE701/703
: ALL DEVICES
FE
V
V
V
= - 3V, I = - 1.5A
750
750
100
CE
CE
CE
C
= - 3V, I = - 2A
C
= - 3V, I = - 4A
C
V
(sat)
(on)
Collector-Emitter Saturation Voltage
: KSE700/702
CE
I
I
I
= - 1.5A, I = - 30mA
-2.5
-2.8
-3
V
V
V
C
C
C
B
: KSE701/703
: ALL DEVICES
= - 2A, I = - 40mA
B
= - 4A, I = - 40mA
B
V
Base-Emitter On Voltage
: KSE700/702
BE
V
V
V
= - 3V, I = - 1.5A
-1.2
-2.5
-3
V
V
V
CE
CE
CE
C
: KSE701/703
: ALL DEVICES
= - 3V, I = - 2A
C
= - 3V, I = - 4A
C
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
Typical Characteristics
-5
10k
IB= -1000µs
VCE = -3V
IB= -900µs
IB= -800µs
-4
IB= -700µs
IB= -600µs
1k
IB= -500µs
-3
-2
-1
-0
IB= -100µs
100
10
-0.01
-0
-1
-2
-3
-4
-5
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
1000
100
10
-100
-10
-1
IC = 500 IB
f=0.1MHZ
IE=0
VBE(sat)
VCE(sat)
1
-0.1
-0.01
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
60
50
40
30
20
10
0
-100
-10
-1
MJE700/701
MJE702/703
-0.1
0
25
50
75
100
125
150
175
-1
-10
-100
-1000
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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