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KSH30C

更新时间：2024-10-29 02:09:05
品牌：FAIRCHILD
描述：General Purpose Amplifier Low Speed Switching Applications

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KSH30C 概述

General Purpose Amplifier Low Speed Switching Applications 通用放大器低速切换应用程序 功率双极晶体管

KSH30C 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-252包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.74外壳连接：COLLECTOR
最大集电极电流 (IC)：1 A集电极-发射极最大电压：100 V
配置：SINGLE最小直流电流增益 (hFE)：15
JEDEC-95代码：TO-252JESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：15 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：3 MHz
Base Number Matches：1

KSH30C 数据手册

通过下载KSH30C数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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KSH30/30C  
General Purpose Amplifier  
Low Speed Switching Applications  
•
•
•
Lead Formed for Surface Mount Application (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
Electrically Similar to Popular TIP30 and TIP30C  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
CBO  
: KSH30  
: KSH30C  
- 40  
- 100  
V
V
Collector-Emitter Voltage  
CEO  
: KSH30  
: KSH30C  
- 40  
- 100  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
- 1  
V
A
EBO  
I
I
I
C
- 3  
A
CP  
B
- 0.4  
15  
A
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
C
Collector Dissipation (Ta=25°C)  
Junction Temperature  
1.56  
150  
T
T
J
Storage Temperature  
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
CEO  
CES  
EBO  
: KSH30  
: KSH30C  
I
= - 30mA, I = 0  
- 40  
- 100  
V
V
C
B
I
I
I
Collector Cut-off Current  
: KSH30  
V
V
= - 40V, I = 0  
= - 60V, I = 0  
B
- 50  
- 50  
µA  
µA  
CE  
CE  
B
: KSH30C  
Collector Cut-off Current  
: KSH30  
V
V
= - 40V, V = 0  
= 100V, V = 0  
BE  
- 20  
- 20  
µA  
µA  
CE  
CE  
BE  
: KSH30C  
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
- 1  
mA  
BE  
C
h
V
V
= - 4V, I = - 0.2A  
40  
15  
FE  
CE  
CE  
C
= - 4V, I = - 1A  
75  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter On Voltage  
I
= - 1A, I = - 125mA  
- 0.7  
- 1.3  
V
V
CE  
BE  
C
B
(on)  
V
V
= - 4A, I = - 1A  
C
CE  
CE  
f
Current Gain Bandwidth Product  
= - 10V, I = - 200mA  
3
MHz  
T
C
* Pulse Test: PW≤300ms, Duty Cycle≤2%  
©2002 Fairchild Semiconductor Corporation  
Rev. B3, October 2002  
Typical Characteristics  
10  
1000  
100  
10  
IC=10IB  
VCE = 2V  
1
tR, VCC= - 30V  
tR, VCC= - 10V  
0.1  
tD  
,
VBE(off)=2V  
0.01  
-0.01  
1
-0.1  
-1  
-10  
-0.01  
-0.1  
-1  
-10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Turn On Time  
10  
-100  
IC=10IB  
tSTG  
-10  
-1  
1
tF, VCC= - 30V  
tF, VCC= - 10V  
0.1  
-0.1  
-0.01  
0.01  
-0.01  
-0.1  
-1  
-10  
-1  
-10  
-100  
-1000  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Turn Off Time  
Figure 4. Safe Operating Area  
20  
15  
10  
5
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 5. Power Derating  
©2002 Fairchild Semiconductor Corporation  
Rev. B3, October 2002  
Package Dimensions  
D-PAK  
6.60 ±0.20  
5.34 ±0.30  
2.30 ±0.10  
0.50 ±0.10  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
1.02 ±0.20  
2.30 ±0.20  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
6.60 ±0.20  
(5.34)  
(5.04)  
(1.50)  
(2XR0.25)  
0.76 ±0.10  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
Rev. B3, October 2002  
Package Dimensions(Continued)  
I-PAK  
2.30 ±0.20  
0.50 ±0.10  
6.60 ±0.20  
5.34 ±0.20  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
Rev. B3, October 2002  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT™  
ImpliedDisconnect™ PACMAN™  
SPM™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™ FRFET™  
DOME™  
FACT Quiet series™ ISOPLANAR™  
POP™  
Stealth™  
FAST®  
LittleFET™  
MicroFET™  
MicroPak™  
Power247™  
PowerTrench®  
QFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
FASTr™  
GlobalOptoisolator™ MICROWIRE™  
QS™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
Across the board. Around the world.™  
The Power Franchise™  
GTO™  
HiSeC™  
I2C™  
MSX™  
MSXPro™  
OCX™  
OCXPro™  
OPTOLOGIC®  
OPTOPLANAR™  
QT Optoelectronics™ TinyLogic™  
Quiet Series™  
TruTranslation™  
RapidConfigure™  
RapidConnect™  
UHC™  
UltraFET®  
SILENT SWITCHER® VCX™  
SMART START™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2002 Fairchild Semiconductor Corporation  
Rev. I1  

KSH30C 相关器件

型号 制造商 描述 价格 文档
KSH30C-I FAIRCHILD Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 获取价格
KSH30C-I SAMSUNG Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 获取价格
KSH30CI FAIRCHILD 1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 获取价格
KSH30CITU FAIRCHILD Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3 获取价格
KSH30CTF FAIRCHILD Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 获取价格
KSH30TF FAIRCHILD Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 获取价格
KSH31 FAIRCHILD General Purpose Amplifier Low Speed Switching Applications 获取价格
KSH31-I FAIRCHILD Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 获取价格
KSH31C FAIRCHILD General Purpose Amplifier Low Speed Switching Applications 获取价格
KSH31C-I SAMSUNG Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 获取价格

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