KSK117GBU [FAIRCHILD]

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN;
KSK117GBU
型号: KSK117GBU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN

文件: 总7页 (文件大小:116K)
中文:  中文翻译
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KSK117  
Low Requency Low Noise AMP  
High Y  
High Input Impedance: I  
Low Noise, NF =1dB (TYP)  
: 15mS (TYP)  
FS  
= -1nA  
GSS  
TO-92  
1. Drain 2. Gate 3. Source  
1
Silicon N-channel Junction Fet  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-50  
Units  
V
Gate-Drain Voltage  
Gate-Current  
V
GDS  
I
10  
mA  
mW  
°C  
G
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
125  
J
-55 ~ 125  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Gate-Drain Breakdown Voltage  
Gate Leak Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
V
V
V
V
V
V
V
=0, I = -100µA  
-50  
V
nA  
mA  
V
GDS  
GSS  
DSS  
DS  
GS  
DS  
DS  
DS  
DS  
GD  
G
I
I
= -30V, V =0  
-1  
14  
DS  
Drain Leak Current  
=10V, V =0  
0.6  
-0.2  
4.0  
GS  
V
(off)  
Gate-Source Voltage  
=10V, I =0.1µA  
-1.5  
GS  
D
Y
Forward Transfer Admittance  
Input Capacitance  
=10V, V =0, f=1KHz  
15  
13  
3
mS  
pF  
pF  
FS  
GS  
C
=0, V =0, f=1MHz  
GS  
ISS  
C
Feedback Capacitance  
=10V, V =0  
DS  
RSS  
f=1MHz  
NF1  
NF2  
Noise Figure  
V
=10V, R =1KΩ  
5
1
10  
2
dB  
dB  
DS  
G
I =0.5mA, f=10Hz  
D
V
=10V, R =1KΩ  
DS  
G
I =0.5mA, f=1Hz  
D
I
Classification  
DSS  
Classification  
Y
G
L
I
(mA)  
1.2 ~ 3.0  
2.6 ~ 6.5  
6.0 ~ 14  
DSS  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
5
4
5
4
3
2
1
0
VGS = 0V  
3
VGS = 0V  
VGS = -0.1V  
2
VGS = -0.1V  
VGS = -0.2V  
1
VGS = -0.2V  
VGS = -0.3V  
VGS = -0.3V  
VGS = -0.4V  
30  
0
-0.4  
-0.2  
0
10  
20  
40  
50  
0
1
2
3
4
5
V
GS[V], DRAIN-SOURCE  
VOLTAGE  
VDS[V], DRAIN-SOURCE  
VOLTAGE  
VDS[V], DRAIN-SOURCE VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. I -V  
D DS  
16  
12  
8
32  
24  
16  
8
VDS = 10V  
VDS = 10V  
f=1kHz  
IDSS = 6.9mA  
IDSS = 12.8mA  
IDSS = 4.2mA  
IDSS = 2.2mA  
4
IDSS = 1.0mA  
0
-1.6  
0
-1.2  
-0.8  
-0.4  
0.0  
0
4
8
12  
16  
VGS[V], GATE-SOURCE VOLTAGE  
ID[mA], DRAIN CURRENT  
Figure 3. I -V  
Figure 4. Yfs -I  
D
D
GS  
10  
100  
10  
1
-
IDSS  
:VDS= 10V  
VGS=0  
VGS(off):VDS=10V  
ID = 0.1µA  
-1  
IDSS :VDS=10V  
VGS=0V  
lYFSl:VDS=10V  
VGS=0V  
f=1kHz  
0.1  
-
1
10  
1
10  
IDSS[mA], DRAIN CURRENT  
IDSS[mA], DRAIN CURRENT  
Figure 5. V (off)-I  
Figure 6. Yfs -I  
DSS  
GS  
DSS  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics (Continued)  
5
5
4
3
2
1
0
VDS = 10V  
ID = 0.5mA  
RG = 1k  
RG=1kΩ  
4
3
2
f = 10Hz  
f = 10Hz  
1
f = 120Hz  
f = 120Hz  
f = 1KHz  
f = 1KHz  
0
10  
15  
20  
25  
30  
35  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
VDS[V], DRAIN-SOURCE VOLTAGE  
ID[mA], DRAIN CURRENT  
Figure 7. NF-V  
Figure 8. NF-I  
DS  
D
10  
10  
8
VDS = 10V  
VDS = 10V  
ID = 0.5mA  
ID = 0.5mA  
RG = 1KΩ  
8
6
4
2
0
f = 10Hz  
6
4
f = 120Hz  
f = 1KHz  
f = 10Hz  
2
f = 120Hz  
f = 1KHz  
0
100  
1000  
10000  
100000  
1000000  
10  
100  
1000  
10000  
100000  
RG[ ], SOURCE RESISTANCE  
f[Hz], FREQUENCY  
Figure 9. NF-R  
Figure 10. NF-f  
G
1000  
100  
10  
100  
10  
1
ID = 0  
VGS = 0  
f = 1MHz  
f = 1MHz  
0.1  
-0.1  
1
0.1  
-1  
-10  
1
10  
VGD[V], GATE-DRAIN VOLTAGE  
VDS[V], DRAIN-SOURCE VOLTAGE  
Figure 11. Ciss-V  
Figure 12. Crss-V  
GD  
DS  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics (Continued)  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
TC[oC], CASE TEMPERATURE  
Figure 13. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
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KSK117LBU  
KSK117YBU  
KSK117OBU  
KSK117GBU  
Product status  
Pricing*  
Package type  
TO-92  
Leads  
Packing method  
BULK  
Full Production  
Full Production  
Full Production  
Full Production  
$0.073  
$0.073  
$0.073  
$0.073  
3
3
3
3
TO-92  
BULK  
TO-92  
BULK  
TO-92  
BULK  
* 1,000 piece Budgetary Pricing  
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