KSK30 [FAIRCHILD]
Low Noise PRE-AMP. Use; 低噪声前置放大器。利用
| 型号： | KSK30 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Low Noise PRE-AMP. Use |
| 文件： | 总5页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSK30
Low Noise PRE-AMP. Use
•
•
•
High Input Impedance: I
=1nA (MAX)
GSS
Low Noise: NF=0.5dB (TYP)
High Voltage: V = -50V
GDS
TO-92
1. Source 2. Gate 3. Drain
1
Silicon N-channel Junction Fet
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-50
Units
V
Gate-Drain Voltage
Gate-Current
V
GDS
I
10
mA
mW
°C
G
P
Collector Dissipation
Junction Temperature
Storage Temperature
100
D
T
T
125
J
-55 ~ 125
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Gate-Drain Breakdown Voltage
Gate Leak Current
Test Condition
Min.
Typ.
Max.
Units
BV
V
V
V
V
V
V
V
=0, I = -100µA
-50
V
nA
mA
V
GDS
GSS
DSS
DS
GS
DS
DS
DS
DS
GD
G
I
I
= -30V, V =0
-1
6.5
-5
DS
Drain Leak Current
=10V, V =0
0.3
-0.4
1.2
GS
V
(off)
Gate-Source Voltage
=10V, I =0.1µA
D
GS
Y
Forward Transfer Admittance
Input Capacitance
=10V, V =0, f=1KHz
mS
pF
FS
GS
C
=0, V =0, f=1MHz
8.2
2.6
0.5
iss
rss
GS
C
Feedback Capacitance
=10V, V =0
DS
f=1MHz
V =15V, V =0
DS
pF
dB
NF
Noise Figure
GS
R =100KΩ
5
G
f=120Hz
I
Classification
DSS
Classification
R
O
0.60 ~ 1.40
Y
G
I
(mA)
0.30 ~ 0.75
1.20 ~ 3.00
2.60 ~ 6.50
DSS
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Typical Characteristics
6.4
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0.0
3.0
VGS = 0V
VDS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
VGS = -0.2V
VGS = -0.4V
VGS = -0.6V
RS = 1kΩ
VGS = -0.8V
VGS = -1.0V
RS = 2kΩ
RS = 5kΩ
RS = 10kΩ
VGS = -1.2V
VGS = -1.4V
VGS = -1.6V
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
-1.6
-0.8
0
20
40
60
V
GS[V], DRAIN-SOURCE
VOLTAGE
VDS[V], DRAIN-SOURCE
VOLTAGE
VGS[V], GATE-SOURCE VOLTAGE
Figure 1. Static Characteristic
Figure 2. I -V
D GS
4.0
4.0
3.2
2.4
1.6
0.8
0.0
VDS = 10V
f = 1KHz
3.2
2.4
1.6
0.8
0.0
VGS = 0V
VGS = -0.2V
VGS = -0.4V
VGS = -0.6V
VGS = -0.8V
VGS = -1.0V
VGS = -1.2V
VGS = -1.6V
VGS = -1.4V
-4.0
-3.2
-2.4
-1.6
-0.8
0.0
0.0
0.8
1.6
2.4
3.2
4.0
VDS[V], DRAIN-SOURCE VOLTAGE
VGS[V], GATE-SOURCE VOLTAGE
Figure 3. I -V
Figure 4. Yfs -V
GS
D
DS
6.4
4.8
3.2
1.6
0.0
10
-
IDSS
:VDS= 10V
VGS=0
VDS = 10V
f = 1kHz
VGS(off):VDS=10V
ID = 0.1µA
-1
0.1
0.1
-
0.0
1.6
3.2
4.8
6.4
1
10
ID[mA], DRAIN CURRENT
IDSS[mA], DRAIN CURRENT
Figure 5. Yfs -I
Figure 6. V (off)-I
GS DSS
D
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Typical Characteristics (Continued)
1000
100
10
100
Ciss: VDS = 0
Crss: VGS = 0
f = 1MHz
IDSS :VDS=10V
VGS=0V
lYFSl:VDS=10V
VGS=0V
f=1kHz
10
Ta = 25℃
1
1
0.1
0.1
0.1
-0
-2
-4
-6
-8
-10
1
10
100
VGD[V], GATE-DRAIN VOLTAGE
VGS[V], GATE-SOURCE VOLTAGE
I
DSS[mA], DRAIN CURRENT
Figure 7. Yfs -I
Figure 8. Ciss-V , Crss-V
GS GD
DSS
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
Figure 9. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
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SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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