KSP62D26Z [FAIRCHILD]

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92;
KSP62D26Z
型号: KSP62D26Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

晶体管
文件: 总4页 (文件大小:33K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSP62/63/64  
Darlington Transistor  
Collector-Emitter Voltage: V  
=KSP62: 20V  
CES  
KSP63/64: 30V  
Collector Power Dissipation: P (max)=625mW  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
CBO  
: KSP62  
: KSP63/64  
-20  
-30  
V
V
CEO  
EBO  
: KSP62  
: KSP63/64  
-20  
-30  
V
V
Emitter-Base Voltage  
Collector Current  
-10  
-500  
V
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
625  
C
T
T
150  
J
-55~150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I = -100µA, I =0  
CES  
C
B
: KSP62  
: KSP63/64  
-20  
-30  
V
V
I
I
Collector Cut-off Current  
: KSP62  
CBO  
V
V
= -15V, I =0  
= -30V, I =0  
E
-100  
-100  
nA  
nA  
CB  
CB  
E
: KSP63/64  
Emitter Cut-off Current  
V
= -10V, I =0  
-100  
nA  
EBO  
BE  
CE  
C
h
* DC Current Gain  
: KSP62  
FE  
V
= -5V, I = -10mA  
20K  
5K  
C
: KSP63  
: KSP64  
: KSP63  
: KSP64  
10K  
10K  
20K  
V
= -5V, I = -100mA  
C
CE  
V
V
(sat)  
(on)  
* Collector-Emitter Saturation Voltage  
CE  
: KSP62  
: KSP63/64  
I = -10mA, I = -0.01mA  
I = -100mA, I = -0.1mA  
C B  
-1.0  
-1.5  
V
V
C
B
* Base-Emitter On Voltage  
: KSP62  
BE  
V
V
= -5V, I = -10mA  
-1.4  
-2  
V
V
CE  
CE  
C
: KSP63/64  
= -5V, I = -100mA  
C
f
Current Gain Bandwidth Product  
: KSP63/64  
V
= -5V, I = -100mA  
125  
MHz  
T
CE  
C
f=100MHz  
* Pulse Test: PW300µs, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  
Typical Characteristics  
1000k  
100k  
10k  
-10  
IC = 1000 IB  
VCE = -5V  
VBE(sat)  
-1  
VCE(sat)  
-0.1  
1k  
-0.01  
-1  
-10  
-100  
-1000  
-1  
-10  
-100  
-1000  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
1000  
VCE = -5V  
VCE = -5V  
100  
10  
1
100  
10  
1
-0.0  
-0.4  
-0.8  
-1.2  
-1.6  
-2.0  
-2.4  
-2.8  
-1  
-10  
-100  
-1000  
VBE[V], BASE-EMITTER VOLTAGE  
IC[mA], COLLECTOR CURRENT  
Figure 3. Base-Emitter On Voltage  
Figure 4. Current Gain Bandwidth Product  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  
Package Demensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  

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