KSR2112D87Z
更新时间：2024-09-19 03:09:53
品牌：FAIRCHILD
描述：Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
概述
数据手册KSR2112D87Z 概述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
KSR2112D87Z 数据手册
通过下载KSR2112D87Z数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载KSR2112
Switching Application (Bias Resistor Built In)
•
•
•
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R=47KΩ)
Complement to KSR1112
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Equivalent Circuit
C
Marking
R
R62
B
PNP Epitaxial Silicon Transistor
E
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
-40
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
-40
V
CEO
EBO
-5
V
I
-100
200
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
-40
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
I = -100µA, I =0
V
V
CBO
CEO
C
E
BV
I = -1mA, I =0
-40
C
B
I
V
= -30V, I =0
-0.1
600
-0.3
µA
CBO
CB
CE
E
h
DC Current Gain
V
= -5V, I = -1mA
100
FE
C
V
(sat)
Collector-Emitter Saturation Voltage
Output Capacitance
I = -10mA, I = -1mA
V
CE
C
B
C
V
= -10V, I =0
5.5
pF
ob
CB
E
f=1MHz
f
Current Gain Bandwidth Product
Input Resistor
V
= -10V, I = -5mA
200
47
MHz
T
CE
C
R
32
62
KΩ
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
Package Demensions
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
KSR2112D87Z 相关器件
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| KSR2112L99Z | FAIRCHILD | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
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|
| KSR2112TI | SAMSUNG | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | 获取价格 |
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| KSR2113 | SAMSUNG | PNP (SWITCHING APPLICATION) | 获取价格 |
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| KSR2113 | FAIRCHILD | Switching Application | 获取价格 |
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| KSR2113D87Z | FAIRCHILD | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
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| KSR2113MTF | FAIRCHILD | 暂无描述 | 获取价格 |
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| KSR2113S62Z | FAIRCHILD | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
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| KSR2113TF | SAMSUNG | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | 获取价格 |
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