KST42L99Z [FAIRCHILD]

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon;
KST42L99Z
型号: KST42L99Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon

光电二极管 晶体管
文件: 总5页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KST42/43  
High Voltage Transistor  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector Base Voltage  
Collector-Emitter Voltage  
CBO  
: KST42  
: KST43  
300  
200  
V
V
CEO  
EBO  
: KST42  
: KST43  
300  
200  
V
V
Emitter-Base Voltage  
Collector Current  
6
V
I
500  
350  
150  
357  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Storage Temperature  
C
T
STG  
R
(j-a)  
Thermal Resistance junction to Ambient  
°C/W  
TH  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I =100µA, I =0  
CBO  
CEO  
EBO  
C
E
: KST42  
: KST43  
300  
200  
V
V
BV  
BV  
* Collector -Emitter Breakdown Voltage  
I =1mA, I =0  
C B  
: KST42  
: KST43  
300  
200  
V
V
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
I =100µA, I =0  
6
V
E
C
I
I
V
=200V, I =0  
0.1  
0.1  
µA  
µA  
CBO  
EBO  
CB  
CB  
E
V
=5V, I =0  
C
h
V
V
V
=10V, I =1mA  
25  
40  
40  
FE  
CE  
CE  
CE  
C
=10V, I =10mA  
C
=10V, I =30mA  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
I =20mA, I =2mA  
0.5  
0.9  
V
V
CE  
BE  
C
B
I =20mA, I =2mA  
C
B
C
Output Capacitance  
: KST42  
ob  
V
=20V, I =0  
3
4
pF  
pF  
CB  
E
: KST43  
f=1MHz  
f
Current Gain Bandwidth Product  
V
=20V, I =10mA  
50  
MHz  
T
CE  
C
f=100MHz  
* Pulse Test: PW300µs, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  
Marking Code  
Type  
KST42  
1D  
KST43  
1E  
Mark  
Marking  
1D  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  
Typical Characteristics  
1000  
10  
IC = 10 IB  
VCE = 10V  
VBE(sat)  
1
100  
VCE(sat)  
0.1  
10  
0.01  
1
10  
100  
1
10  
100  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
100  
10  
1
120  
100  
IE = 0  
f = 1MHz  
VCE = 20V  
80  
60  
40  
20  
0
0.1  
1
10  
100  
1
10  
100  
VCB [V], COLLECTOR-BASE VOLTAGE  
IC[mA], COLLECTOR CURRENT  
Figure 3. Collector-Base Capacitance  
Figure 4. Current Gain Bandwidth Product  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  
Package Demensions  
SOT-23  
0.40 ±0.03  
0.03~0.10  
0.38 REF  
+0.05  
–0.023  
0.40 ±0.03  
0.12  
0.96~1.14  
2.90 ±0.10  
0.95 ±0.03 0.95 ±0.03  
1.90 ±0.03  
0.508REF  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  

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