MBR3035PT [FAIRCHILD]
30 Ampere Schottky Barrier Rectifiers; 30安培肖特基势垒整流器型号: | MBR3035PT |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 30 Ampere Schottky Barrier Rectifiers |
文件: | 总3页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR3035PT - MBR3060PT
0.203(5.16)
0.193(4.90)
Features
0.645(16.4)
0.625(15.9)
0.245(6.2)
0.078(1.98)
10°
• Low power loss, high efficiency.
• High surge capacity.
0.323(8.2)
0.313(7.9)
0.225(5.7)
30°
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
.17(4.3)
10° TYP
TO-3P/
TO-247AD
0.84(21.3)
0.82(20.8)
BOTH SIDES
0.134(3.4)
0.114(2.9)
• Metal silicon junction, majority carrier
conduction.
0.118(3.0)
0.108(2.7)
2
3
1
0.086(2.18)
0.076(1.93)
• High current capacity, low forward
voltage drop.
0.16(4.1)
0.14(3.5)
0.795(20.2)
0.775(19.7)
PIN 1
PIN 3
0.127(3.22)
+
0.117(2.97)
CASE
PIN 2
• Guard ring for over voltage protection.
0.048(1.22)
0.044(1.12)
0.030(0.76)
0.020(0.51)
0.225(5.7)
0.205(5.2)
30 Ampere Schottky Barrier Rectifiers
Dimensions are in: inches (mm)
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
30
A
Peak Repetitive Forward Current
if(repetitive)
30
A
A
(Rated V , Square Wave, 20 KHz) @ T = 130 C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
°
R
A
if(surge)
200
PD
3.0
25
W
mW/ C
°
Derate above 25 C
°
Thermal Resistance, Junction to Lead
1.4
Rθ
C/W
°
JL
Storage Temperature Range
-65 to +175
-65 to +150
C
C
Tstg
TJ
°
Operating Junction Temperature
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
3035PT
35
3045PT
45
3050PT
50
3060PT
60
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
24
31
35
42
35
45
50
60
V
DC Reverse Voltage
(Rated VR)
10,000
V/uS
Voltage Rate of Change (Rated VR)
Maximum Reverse Current
1.0
60
5.0
100
mA
mA
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage
-
0.75
0.65
-
-
V
V
V
V
IF = 20 A, TC = 25°C
0.60
0.76
0.72
I
I
I
F = 20 A, TC = 125°C
F = 30 A, TC = 25°C
F = 30 A, TC = 125°C
Peak Repetitive Reverse Surge
Current
1.0
0.5
A
2.0 us Pulsu Width, f = 1.0 KHz
1999 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT, Rev. A
Schotty Barrier Rectifier
(continued)
Typical Characteristics
Forward Current Derating Curve
Non-Repetitive Surge Current
30
300
250
200
150
100
50
MBR3035PT-MBR3045PT
24
MBR3050PT-MBR3060PT
18
SINGLE PHASE
HALF WAVE
12
6
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
LENGTHS
0
0
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
º
AMBIENT TEMPERATURE ( C)
NUMBER OF CYCLES AT 60Hz
Forward Characteristics
Reverse Characteristics
50
10
50
10
MBR3035PT-MBR3045PT
T
= 150ºC
T = 25ºC
A
A
T
= 125ºC
A
MBR3050PT-MBR3060PT
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
MBR3035PT-MBR3045PT
1
0.1
1
0.1
º
T
= 75
C
A
0.01
0.001
T
= 25ºC
A
Pulse Width = 300µS
2% Duty Cycle
MBR3050PT-MBR3060PT
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
80
100 120 140
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Typical Junction Capacitance
Transient Thermal Impedance
5000
100
2000
1000
500
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
10
1
200
100
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
T. PULSE DURATION (sec.)
MBR3035PT - MBR3060PT, Rev. A
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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