MCT5201300W [FAIRCHILD]

Transistor Output Optocoupler, 1-Element, 5300V Isolation, LEAD FREE, DIP-6;
MCT5201300W
型号: MCT5201300W
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Transistor Output Optocoupler, 1-Element, 5300V Isolation, LEAD FREE, DIP-6

输出元件 光电
文件: 总11页 (文件大小:167K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
Description  
The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting  
diode, coupled with an NPN phototransistor in a six pin dual-in-line package.  
6
6
6
The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering  
1
1
250% CTR  
with 1 mA of LED input current. When an LED input  
CE(SAT)  
current of 1.6 mA is supplied data rates to 20K bits/s are possible.  
1
The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an  
external base to emitter resistor data rates of 100K bits/s can be achieved.  
Features  
High CTR  
comparable to Darlingtons  
CE(SAT)  
CTR guaranteed 0°C to 70°C  
High common mode transient rejection 5kV/µs  
Data rates up to 150 kbits/s (NRZ)  
Underwriters Laboratory (UL) recognized (file #E90700)  
VDE recognized (file #94766)  
SCHEMATIC  
– Add option 300 (e.g., MCT5211.300)  
1
6
5
ANODE  
BASE  
COL  
Applications  
2
3
CATHODE  
CMOS to CMOS/LSTTL logic isolation  
LSTTL to CMOS/LSTTL logic isolation  
RS-232 line receiver  
Telephone ring detector  
AC line voltage sensing  
4
EMITTER  
Switching power supply  
Parameters  
Symbol  
Device  
Value  
Units  
TOTAL DEVICE  
Storage Temperature  
T
All  
All  
All  
-55 to +150  
-55 to +100  
260 for 10 sec  
260  
°C  
°C  
STG  
Operating Temperature  
T
OPR  
Lead Solder Temperature  
Total Device Power Dissipation @ 25°C (LED plus detector)  
Derate Linearly From 25°C  
EMITTER  
T
°C  
SOL  
mW  
mW/°C  
P
All  
D
3.5  
Continuous Forward Current  
Reverse Input Voltage  
I
All  
All  
All  
All  
All  
50  
6
mA  
V
F
V
R
Forward Current - Peak (1 µs pulse, 300 pps)  
LED Power Dissipation  
I (pk)  
3.0  
75  
1.0  
A
F
mW  
mW/°C  
P
D
Derate Linearly From 25°C  
DETECTOR  
Continuous Collector Current  
Detector Power Dissipation  
Derate Linearly from 25°C  
I
All  
All  
All  
150  
150  
2.0  
mA  
mW  
C
P
D
mW/°C  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 1 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specied.)  
A
INDIVIDUAL COMPONENT CHARACTERISTICS  
Parameters  
Test Conditions  
Symbol Device  
Min  
Typ**  
Max Units  
EMITTER  
Input Forward Voltage  
(I = 5 mA)  
V
All  
All  
1.25  
1.5  
V
F
F
Forward Voltage Temp.  
Coefcient  
V  
T  
mV/  
°C  
F
(I = 2 mA)  
-1.75  
F
A
Reverse Voltage  
(I = 10 µA)  
V
All  
All  
6
V
R
R
Junction Capacitance  
(V = 0 V, f = 1.0 MHz)  
C
18  
pF  
F
J
DETECTOR  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Dark Current  
(I = 1.0 mA, I = 0)  
BV  
BV  
BV  
I
All  
All  
All  
All  
All  
All  
All  
30  
30  
5
100  
120  
10  
1
V
V
C
F
CEO  
CBO  
EBO  
(I = 10 µA, I = 0)  
C
F
(I = 10 µA, I = 0)  
V
C
F
(V = 10V, I = 0, R = 1M)  
100  
nA  
pF  
pF  
pF  
CE  
F
BE  
CER  
Capacitance  
Collector to Emitter  
Collector to Base  
Emitter to Base  
(V = 0, f = 1 MHz)  
C
C
10  
80  
15  
CE  
CE  
CB  
(V = 0, f = 1 MHz)  
CB  
(V = 0, f = 1 MHz)  
C
EB  
EB  
ISOLATION CHARACTERISTICS  
Characteristic  
Test Conditions  
Symbol  
Device  
Min Typ** Max  
Units  
Input-Output Isolation  
Voltage  
(f = 60Hz, t = 1 min.)  
V
All  
5300  
Vac(rms)  
(10)  
ISO  
(10)  
11  
Isolation Resistance  
Isolation Capacitance  
V
V
V
V
V
V
= 500 VDC, T = 25°C  
R
All  
All  
10  
I-O  
I-O  
CM  
CM  
CM  
CM  
A
ISO  
(9)  
= 0, f = 1 MHz  
C
0.7  
pF  
ISO  
Common Mode Transient  
Rejection Output High  
Common Mode Transient  
Rejection Output Low  
= 50 V  
, R = 750, I = 0  
MCT5210/11  
MCT5200/01  
MCT5210/11  
MCT5200/01  
P-P1  
L
F
CM  
5000  
V/µs  
V/µs  
H
= 50 V , R = 1K, I = 0  
P-P  
L
F
= 50 V  
= 50 V  
, R = 750, I =1.6mA  
L F  
P-P1  
P-P1  
CM  
5000  
L
, R = 1K, I = 5 mA  
L
F
**All typical T =25°C  
A
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 2 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
TRANSFER CHARACTERISTICS (T = 0°C to 70°C Unless otherwise specied.)  
A
DC Characteristics  
Test Conditions  
I = 10 mA, V = 0.4 V  
Symbol  
Device  
Min Typ** Max Units  
MCT5200  
MCT5201  
MCT5210  
75  
F
CE  
I = 5 mA, V = 0.4 V  
120  
Saturated Current  
F
CE  
(1)  
Transfer Ratio  
I = 3.0 mA, V = 0.4 V  
CTR  
CE(SAT)  
60  
100  
75  
%
%
%
F
CE  
(Collector to Emitter)  
I = 1.6 mA, V = 0.4 V  
F
CE  
MCT5211  
MCT5210  
MCT5211  
MCT5200  
I = 1.0 mA, V = 0.4 V  
F
CE  
I = 3.0 mA, V = 5.0 V  
70  
F
CE  
Current Transfer Ratio  
(Collector to Emitter)  
I = 1.6 mA, V = 5.0 V  
CTR  
150  
110  
0.2  
(1)  
F
CE  
(CE)  
I = 1.0 mA, V = 5.0 V  
F
CE  
I = 10 mA, V = 4.3 V  
F
CB  
I = 5 mA, V = 4.3 V  
MCT5201 0.28  
F
CB  
Current Transfer Ratio  
Collector to Base(2)  
I = 3.0 mA, V = 4.3 V  
CTR  
MCT5210  
0.2  
0.3  
F
CE  
(CB)  
I = 1.6 mA, V = 4.3 V  
F
CE  
MCT5211  
I = 1.0 mA, V = 4.3 V  
0.25  
F
CE  
I = 10 mA, I = 7.5 mA  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
0.4  
0.4  
0.4  
0.4  
F
CE  
I = 5 mA, I = 6 mA  
F
CE  
Saturation Voltage  
V
V
CE(SAT)  
I = 3.0 mA, I = 1.8 mA  
F
CE  
I = 1.6 mA, I = 1.6 mA  
F
CE  
AC Characteristics  
Test Conditions  
Symbol  
Device  
Min  
Typ  
Max Units  
R = 330 , R = ∞  
I = 3.0 mA  
10  
7
L
BE  
F
MCT5210  
R = 3.3 k, R = 39 kΩ  
V
= 5.0 V  
L
BE  
CC  
R = 750 , R = ∞  
I = 1.6mA  
14  
15  
17  
24  
1.6  
3
L
BE  
F
R = 4.7 k, R = 91 kΩ  
V
= 5.0V  
Propagation Delay  
High to Low  
L
BE  
CC  
T
MCT5211  
µs  
(3)  
PHL  
R = 1.5 k, R = ∞  
I = 1.0mA  
F
L
BE  
R = 10 k, R = 160 kΩ  
V
= 5.0V  
L
BE  
CC  
I = 10mA  
MCT5200  
MCT5201  
12  
30  
V
= 0.4V, V = 5V,  
F
CE  
CC  
R = g. 13, R = 330 kΩ  
I = 5mA  
L
BE  
F
R = 330 , R = ∞  
I = 3.0 mA  
0.4  
8
L
BE  
F
MCT5210  
R = 3.3 k, R = 39 kΩ  
V
= 5.0 V  
L
BE  
CC  
R = 750 , R = ∞  
I = 1.6mA  
2.5  
11  
7
L
BE  
F
R = 4.7 k, R = 91 kΩ  
V
= 5.0V  
Propagation Delay  
Low to High  
L
BE  
CC  
T
MCT5211  
µs  
(4)  
PLH  
R = 1.5 k, R = ∞  
I = 1.0mA  
F
L
BE  
R = 10 k, R = 160 kΩ  
V = 5.0 V  
CC  
16  
18  
12  
0.5  
L
BE  
I = 10mA  
MCT5200  
MCT5201  
MCT5200  
20  
13  
7
V
= 0.4V, V = 5V,  
F
CE  
CC  
R = g. 13, R = 330 kΩ  
I = 5mA  
L
BE  
F
V
= 0.4V,  
I = 10mA  
F
CE  
(5)  
Delay Time  
R
= 330 k,  
t
µs  
BE  
d
I = 5mA  
MCT5201  
MCT5200  
MCT5201  
1.1  
1.3  
2.5  
15  
F
R = 1 k, V = 5V  
L
CC  
V
= 0.4V,  
= 330 k,  
I = 10mA  
6
CE  
F
(6)  
Rise Time  
R
t
µs  
BE  
r
I = 5mA  
20  
F
R = 1 k, V = 5V  
L
CC  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 3 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
TRANSFER CHARACTERISTICS (T = 0°C to 70°C Unless otherwise specied.) (Continued)  
A
DC Characteristics  
Test Conditions  
Symbol  
Device  
Min Typ** Max Units  
V
R
= 0.4V,  
= 330 k,  
I = 10mA  
MCT5200  
15  
10  
16  
16  
18  
13  
30  
30  
CE  
F
(7)  
Storage Time  
t
µs  
µs  
BE  
s
I = 5mA  
MCT5201  
MCT5200  
MCT5201  
F
R = 1 k, V = 5V  
L
CC  
V
= 0.4V,  
= 330 k,  
I = 10mA  
F
CE  
(8)  
Fall Time  
R
t
BE  
f
I = 5mA  
F
R = 1 k, V = 5V  
L
CC  
**All typicals at T = 25°C  
A
Notes  
1. DC Current Transfer Ratio (CTR ) is dened as the transistor collector current (I ) divided by the input LED current (I ) x  
CE  
CE  
F
100%, at a specied voltage between the collector and emitter (V ).  
CE  
2. The collector base Current Transfer Ratio (CTR ) is dened as the transistor collector base photocurrent(I ) divided by the  
CB  
CB  
input LED current (I ) time 100%.  
F
3. Referring to Figure 14 the T  
propagation delay is measured from the 50% point of the rising edge of the data input pulse to  
PHL  
the 1.3V point on the falling edge of the output pulse.  
4. Referring to Figure 14 the T propagation delay is measured from the 50% point of the falling edge of data input pulse to the  
PLH  
1.3V point on the rising edge of the output pulse.  
5. Delay time (t ) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.  
d
6. Rise time (t ) is measured from 90% to 10% of Vo falling edge.  
r
7. Storage time (t ) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.  
s
8. Fall time (t ) is measured from 10% to 90% of Vo rising edge.  
f
9. C  
is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).  
ISO  
10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 4 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
TYPICAL PERFORMANCE GRAPHS  
Fig. 1 LED Forward Voltage vs. Forward Current  
Fig. 2 Normalized Current Transfer Ratio vs.  
Forward Current  
2.0  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.8  
1.6  
1.4  
T
A
= -55°C  
1.2  
1.0  
0.8  
T
A
= 25°C  
Normalized to:  
I
= 5mA  
F
T
= 100°C  
A
V
= 5V  
CE  
T
= 25°C  
A
0.1  
1
10  
100  
0.1  
1
10  
I - FORWARD CURRENT (mA)  
F
100  
I
- LED FORWARD CURRENT (mA)  
F
Fig. 4 Normalized Collector vs.  
Collector - Emitter Voltage  
Fig. 3 Normalized CTR vs.Temperature  
1.6  
1.4  
10  
1
Normalized to:  
I
= 5mA  
F
I
F
= 10 mA  
V
T
= 5V  
= 25°C  
CE  
A
I
I
I
= 10mA  
= 2mA  
= 5mA  
F
F
F
I
F
= 5 mA  
1.2  
1.0  
I
F
= 2 mA  
0.1  
I = 1 mA  
F
I = 0.5 mA  
F
0.8  
I
= 1mA  
F
0.01  
0.001  
0.0001  
I
F
= 0.2 mA  
0.6  
0.4  
I
I
= 0.5 mA  
= 0.2 mA  
F
Normalized to:  
I = 5mA  
F
F
0.2  
0.0  
V
= 5V  
CE  
T
= 25°C  
A
-60 -40  
-20  
0
20  
40  
60  
80  
100  
0.1  
1
10  
T
A
- AMBIENT TEMPERATURE - °C  
V
CE  
- COLLECTOR - EMITTER VOLTAGE - V  
Fig. 5 Normalized Collector Base Photocurrent  
Ratio vs. Forward Current  
Fig. 6 Normalized Collector -  
Base Current vs.Temperature  
100  
10  
1
I
= 10 mA  
= 5 mA  
F
I
F
10  
1
I
F
= 2 mA  
0.1  
I
F
= 1 mA  
I
= 0.5 mA  
= 0.2 mA  
F
0.1  
0.01  
Normalized to:  
= 5mA  
Normalized to:  
= 5mA  
I
F
I
I
F
F
V
T
= 4.3V  
= 25°C  
V
T
= 4.3V  
= 25°C  
CB  
CB  
A
A
0.01  
0.001  
-60 -40  
-20  
0
20  
40  
60  
80 100  
0.1  
1
10  
100  
T
- AMBIENT TEMPERATURE - °C  
I
- FORWARD CURRENT - mA  
A
F
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 5 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
TYPICAL PERFORMANCE GRAPHS (Continued)  
Fig. 7 Collector-Emitter Dark Current vs.  
Fig. 8 Switching Time vs.  
Ambient Temperature  
Ambient Temperature  
10000  
30  
25  
20  
15  
10  
5
I
V
= 0mA  
Refer to Figure 13 for switching time circuit  
I
= 10mA  
= 5V  
F
F
CC  
= 10V  
V
R
R
CE  
= 1K  
L
1000  
100  
10  
= 330K  
BE  
t
PLH  
t
s
t
f
1
t
t
r
d
t
PHL  
0
-60  
0.1  
-40  
-20  
0
20  
40  
60  
80  
100  
0
10 20 30 40 50 60 70 80 90 100  
T
A
- AMBIENT TEMPERATURE (°C)  
T - AMBIENT TEMPERATURE (°C)  
A
Fig. 10 Switching Time vs.  
Ambient Temperature  
Fig. 9 Switching Time vs.  
Ambient Temperature  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
I
V
R
R
= 10mA  
I = 5mA  
F
Refer to Figure 13 for switching time circuit  
F
Refer to Figure 13 for switching time circuit  
= 5V  
V
= 5V  
CC  
CC  
= 1K  
R
R
= 1K  
L
L
= 100K  
= 330K  
BE  
BE  
t
PLH  
t
f
t
PLH  
t
s
t
f
t
s
t
t
t
r
r
d
t
t
d
PHL  
t
PHL  
0
-60  
0
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
T
- AMBIENT TEMPERATURE (°C)  
T
A
- AMBIENT TEMPERATURE (°C)  
A
Fig. 11 Switching Time vs.  
Ambient Temperature  
Fig. 12 Turn-on Time vs.  
Base-Emitter Resistance  
20  
100  
10  
1
I
V
R
R
= 5mA  
F
Refer to Figure 13 for switching time circuit  
t
, IF=3mA, RL=3.3K  
PLH  
= 5V  
CC  
t
, IF=1.6mA, RL=4.7K  
PLH  
= 1K  
L
t
, IF=1mA, RL=10K  
= 100K  
PLH  
BE  
15  
10  
5
t
PLH  
t
, IF=1mA, RL=10K  
t
PHL  
f
t
, IF=1.6mA, RL=4.7K  
PHL  
t
s
t
, IF=3mA, RL=3.3K  
PHL  
t
t
d
r
V
V
T
= 5V  
t
CC  
CE  
A
PHL  
= 0.4V  
= 25°C  
0
-60  
10  
100  
1000  
10000  
-40  
-20  
0
20  
40  
60  
80  
100  
T
A
- AMBIENT TEMPERATURE (°C)  
BASE RESISTANCE - R (k)  
BE  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 6 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
TYPICAL ELECTRO-OPTICAL CHARACTERISTICS (TA = 25°C Unless Otherwise Specied)  
VCC = 5.0 V  
VCC = 5.0 V  
Pulse Gen  
ZO = 50Ω  
f = 10KHz  
10% D.F.  
Pulse Gen  
ZO = 50Ω  
f = 10KHz  
10% D.F.  
1K  
1K  
VO  
4.7K  
VO  
D2  
D3  
D4  
D1  
IF monitor  
IF monitor  
330K  
330K  
100 Ω  
100 Ω  
tr, tf, td, ts  
TEST CIRCUIT  
t
PHL, tPLH  
TEST CIRCUIT  
Figure 13.  
INPUT  
(IF)  
50%  
0
td  
90%  
tPHL  
90%  
OUTPUT  
(VO)  
tPLH  
1.3 V  
1.3 V  
10%  
10%  
0
tr  
ts  
tf  
Figure 14. Switching Circuit Waveforms  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 7 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
Package Dimensions (Through Hole)  
Package Dimensions (Surface Mount)  
0.350 (8.89)  
0.330 (8.38)  
PIN 1  
ID.  
PIN 1  
ID.  
3
1
0.270 (6.86)  
0.240 (6.10)  
0.270 (6.86)  
0.240 (6.10)  
0.350 (8.89)  
0.330 (8.38)  
6
0.070 (1.78)  
0.045 (1.14)  
0.300 (7.62)  
TYP  
0.070 (1.78)  
0.045 (1.14)  
0.200 (5.08)  
0.115 (2.92)  
0.200 (5.08)  
0.165 (4.18)  
0.016 (0.41)  
0.008 (0.20)  
0.020 (0.51)  
MIN  
0.020 (0.51)  
0.154 (3.90)  
0.100 (2.54)  
0.016 (0.40) MIN  
MIN  
0.022 (0.56)  
0.016 (0.41)  
0.100 (2.54)  
TYP  
0.315 (8.00)  
MIN  
0.016 (0.40)  
0.008 (0.20)  
0.405 (10.30)  
MAX  
0.300 (7.62)  
TYP  
0.022 (0.56)  
0.016 (0.41)  
0° to 15°  
Lead Coplanarity : 0.004 (0.10) MAX  
0.100 (2.54)  
TYP  
Package Dimensions (0.4” Lead Spacing)  
Recommended Pad Layout for  
Surface Mount Leadform  
0.270 (6.86)  
0.240 (6.10)  
0.070 (1.78)  
0.060 (1.52)  
0.350 (8.89)  
0.330 (8.38)  
0.070 (1.78)  
0.045 (1.14)  
0.415 (10.54)  
0.100 (2.54)  
0.295 (7.49)  
0.030 (0.76)  
0.200 (5.08)  
0.135 (3.43)  
0.154 (3.90)  
0.100 (2.54)  
0.016 (0.40)  
0.008 (0.20)  
0.004 (0.10)  
MIN  
0° to 15°  
0.022 (0.56)  
0.016 (0.41)  
0.400 (10.16)  
TYP  
0.100 (2.54) TYP  
Note  
All dimensions are in inches (millimeters)  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 8 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
ORDERING INFORMATION  
Option  
Order Entry Identifier  
Description  
S
.S  
.SD  
Surface Mount Lead Bend  
Surface Mount; Tape and Reel  
0.4" Lead Spacing  
SD  
W
.W  
300  
.300  
.300W  
.3S  
VDE 0884  
300W  
3S  
VDE 0884, 0.4" Lead Spacing  
VDE 0884, Surface Mount  
3SD  
.3SD  
VDE 0884, Surface Mount, Tape and Reel  
MARKING INFORMATION  
1
2
MCT5200  
V XX YY K  
6
5
3
4
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option See order entry table)  
3
4
5
6
Two digit year code, e.g., 03’  
Two digit work week ranging from 01to 53’  
Assembly package code  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 9 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
Carrier Tape Specifications  
12.0 0.1  
4.0 0.1  
4.85 0.20  
Ø1.55 0.05  
1.75 0.10  
0.30 0.05  
4.0 0.1  
7.5 0.1  
16.0 0.3  
9.55 0.20  
13.2 0.2  
Ø1.6 0.1  
10.30 0.20  
User Direction of Feed  
0.1 MAX  
NOTE  
All dimensions are in inches (millimeters)  
Reflow Profile (Black Package, No Suffix)  
300  
250  
215°C, 1030 s  
225°C peak  
200  
150  
Time above 183°C, 60150 sec  
Ramp up = 3°C/sec  
100  
50  
0
Peak reflow temperature: 225°C (package surface temperature)  
Time of temperature higher than 183°C for 60150 seconds  
One time soldering reflow is recommended  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
Time (Minute)  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 10 of 11  
LOW INPUT CURRENT  
PHOTOTRANSISTOR OPTOCOUPLERS  
MCT5200  
MCT5201  
MCT5210  
MCT5211  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO  
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME  
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body, or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in a significant injury of the user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
© 2003 Fairchild Semiconductor Corporation  
6/10/03  
Page 11 of 11  

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