MJE170 [FAIRCHILD]

Low Power Audio Amplifier Low Current, High Speed Switching Applications; 低功耗音频放大器低电流,高速开关应用
MJE170
型号: MJE170
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Low Power Audio Amplifier Low Current, High Speed Switching Applications
低功耗音频放大器低电流,高速开关应用

晶体 开关 音频放大器 晶体管 功率双极晶体管 局域网
文件: 总5页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MJE170/171/172  
Low Power Audio Amplifier  
Low Current, High Speed Switching Applications  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: MJE170  
: MJE171  
: MJE172  
- 60  
- 80  
- 100  
V
V
V
CBO  
: MJE170  
: MJE171  
: MJE172  
- 40  
- 60  
- 80  
V
V
V
CEO  
EBO  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 7  
- 3  
V
A
I
I
I
C
- 6  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
12.5  
1.5  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max. Units  
BV  
Collector-Emitter Breaksown Voltage  
CEO  
: MJE170  
: MJE171  
: MJE172  
I
= 10mA, I = 0  
-40  
-60  
-80  
V
V
V
C
B
I
Collector Cut-off Current : MJE170  
V
V
V
V
V
V
= - 60V, I = 0  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
µA  
µA  
µA  
mA  
mA  
mA  
CBO  
CB  
CB  
CB  
CB  
CB  
CB  
B
: MJE171  
: MJE172  
: MJE170  
: MJE171  
: MJE172  
= - 80V, I = 0  
E
= - 100V, I = 0  
E
= - 60V, I = 0, @T = 150°C  
E
C
= - 80V, I = 0, @T = 150°C  
E
C
= - 100V, I = 0, @T = 150°C  
E
C
I
Emitter Cut-off Current  
DC Current Gain  
V
= - 7V, I = 0  
-0.1  
250  
µA  
EBO  
BE  
C
h
V
V
V
= - 1V, I = - 100mA  
50  
30  
12  
FE  
CE  
CE  
CE  
C
= - 1V, I = - 500mA  
C
= - 1V, I = - 1.5A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
I
= - 500mA, I = - 50mA  
-0.3  
-0.9  
-1.7  
V
V
V
CE  
C
C
C
B
= - 1.5A, I = - 150mA  
B
= - 3A, I = - 600mA  
B
V
V
(sat)  
(on)  
I
I
= - 1.5A, I = - 150mA  
-1.5  
-2.0  
V
V
BE  
BE  
C
C
B
= - 3A, I = - 600mA  
B
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
V
V
= - 1V, I = - 500mA  
-1.2  
V
CE  
CE  
CB  
C
f
= - 10V, I = - 100mA  
50  
MHz  
pF  
T
C
C
= - 10V, I = 0, f = 0.1MHz  
E
50  
ob  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
Typical Charactristics  
-2.0  
-1.8  
-1.6  
-1.4  
-1.2  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
-0.0  
1000  
VCE = -1V  
100  
VBE(sat) IC/IB=10  
V
BE@VCE= -1V  
IC/IB=5  
IC/IB=10  
VCE(sat)  
-0.01  
10  
-0.1  
-1  
-10  
-100  
-0.1  
-1  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
1000  
1000  
100  
10  
f=0.1MHZ  
IE=0  
tR  
100  
tD  
10  
1
1
-0.1  
-0.01  
-0.1  
-1  
-10  
-1  
-10  
-100  
VCB[V], COLLECTOR-BASE VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Collector Output Capacitance  
Figure 4. Turn On Time  
-10  
1000  
tSTG  
-1  
tF  
100  
-0.1  
MJE170  
MJE171  
MJE172  
VCEMAX.  
-0.01  
10  
-1  
-10  
-100  
-0.1  
-1  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 5. Turn Off Time  
Figure 6. Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
Typical Characteristics (Continued)  
16  
14  
12  
10  
8
6
4
2
0
0
25  
50  
75  
100  
125  
150  
175  
Tc[oC], CASE TEMPERATURE  
Figure 7. DC current Gain  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
Package Demensions  
TO-126  
8.00 ±0.30  
3.25 ±0.20  
ø3.20 ±0.10  
(1.00)  
(0.50)  
0.75 ±0.10  
1.75 ±0.20  
1.60 ±0.10  
0.75 ±0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28±0.20]  
2.28TYP  
[2.28±0.20]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  

相关型号:

MJE170G

Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS
ONSEMI

MJE170LEADFREE

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CENTRAL

MJE170STU

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD

MJE170STU

PNP外延硅晶体管
ONSEMI

MJE171

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
MOTOROLA

MJE171

POWER TRANSISTORS COMPLEMENTARY SILICON
ONSEMI

MJE171

Low Power Audio Amplifier Low Current, High Speed Switching Applications
FAIRCHILD

MJE171

POWER TRANSISTORS(3.0A,40-80V,12.5W)
MOSPEC

MJE171

isc Silicon PNP Power Transistor
ISC

MJE171

Silicon PNP Power Transistors
SAVANTIC

MJE171G

Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS
ONSEMI

MJE171_06

Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS
ONSEMI