MMBT5087 [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | MMBT5087 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总9页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
3
•
This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
2
SOT-23
Mark: 2Q
TO-92
1. Emitter 2. Base 3. Collector
1
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Value
-50
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
CEO
-50
V
CBO
EBO
-3.0
V
I
- Continuous
-100
mA
°C
C
T , T
Junction and Storage Temperature
-55 ~ +150
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Collector Cutoff Current
I
I
= -1.0mA, I = 0
-50
-50
V
V
(BR)CEO
(BR)CBO
CEO
C
B
= -100µA, I = 0
C
E
I
V
V
= -10V, I = 0
-10
-50
nA
nA
CB
CB
E
= -35V, I = 0
E
I
Emitter Cutoff Current
V
= -3.0V, I = 0
-50
nA
CBO
EB
C
On Characteristics
h
DC Current Gain
I
I
I
= -100µA, V = -5.0V
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
FE
C
C
C
CE
= -1.0mA, V = -5.0V
CE
= -10mA, V = -5.0V
CE
V
V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= -10mA, I = -1.0mA
-0.3
V
V
CE(sat)
C
B
= -1.0mA, V = -5.0V
-0.85
BE(on)
C
CE
Small Signal Characteristics
f
Current Gain Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
I
= -500µA, V = -5.0V, f = 20MHz
40
MHz
pF
T
C
CE
C
V
= -5.0V, I = 0, f = 100KHz
4.0
cb
CB
E
h
I
= -1.0mA, V = -5.0V,
5086
5087
150
250
600
900
fe
C
CE
f = 1.0KHz
NF
Noise Figure
I
R
= -100µA, V = -5.0V
5086
5087
3.0
2.0
dB
dB
C
CE
= 3.0kΩ, f = 1.0KHz
S
I
R
= -20µA, V = -5.0V
5086
5087
3.0
2.0
dB
dB
C
CE
= 10kΩ
S
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
Thermal Characteristics T =25°C unless otherwise noted
a
Max.
Symbol
Parameter
Total Device Dissipation
Units
2N5086
2N5087
*MMBT5087
P
625
5.0
350
2.8
mW
mW/°C
D
Derate above 25°C
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
θJC
θJA
357
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
Typical Characteristics
350
0.3
0.25
0.2
V
= 5V
CB
β = 10
125 °C
300
250
200
150
100
50
25 °C
0.15
0.1
25 C
°
125 C
°
- 40 °C
0.05
- 40 C
°
0
0.01 0.03 0.1
0.3
1
3
10
30
100
0.1
1
10
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0.8
0.6
0.4
0.2
0
1
0.8
- 40 °C
- 40 °C
25 °C
0.6
0.4
0.2
0
25 °C
125 °C
125 °C
V
= 5V
CE
β = 10
0.1
1
10
50
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
20
16
12
8
100
10
f = 1 MHz
V
= 40V
CB
1
C
ibo
0.1
0.01
C
4
obo
0
25
50
75
100
125
0
4
8
12
16
20
T - AMBIE NT TEMP ERATURE ( C)
°
REVERSE BIAS VOLTAGE (V)
A
Figure 6. Input and Output Capacitance
vs Reverse Voltag
Figure 5. Collector Cutoff Current
vs Ambient Temperature
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
Typical Characteristics(Continuce)
5
4
3
2
1
0
350
V
= 5V
CE
VCE = 5V
300
250
200
150
100
50
I
I
= - 250 µA, R = 5.0 kΩ
S
C
C
= - 500 µA, R = 1.0 kΩ
S
I
= - 20 µA, R = 10 kΩ
C
S
0
100
1000
10000
f - FREQUENCY (Hz)
1000000
0.1
1
10
100
I
- COLLECTOR CURRENT (mA)
C
Figure 7. Gain Bandwidth Product
vs Collector Current
Figure 8. Noise Figure vs Frequency
8
6
4
2
0
625
500
375
250
125
0
V CE = 5V
TO-92
BANDWIDTH = 15.7 kHz
I
= 10 µA
C
SOT-23
I
= 100 µA
C
1,000
2,000
5,000
10,000
20,000
50,000
100,000
0
25
50
75
100
125
150
TEMPERATURE (oC)
R
- SOURCE RESISTANCE ( Ω)
S
Figure 9. Wideband Noise Frequency
vs Source Resistance
Figure 10. Power Dissipation vs
Ambient Temperature
0.1
10
5
VCE = - 5.0V
VCE = - 5.0V
0.05
Hz
0
0
1
=
f
, f
n
0.02
0.01
2
1
z
i
n
i
H
k
0
.
1
=
,
z
H
k
0
1
e
, f = 100 Hz
=
n
, f
i
n
0.005
0.5
e
, f = 1.0 kHz
n
e
, f = 10 kHz
0.2
0.1
0.002
0.001
n
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
C
Figure 12. Equivalent Input Noise Voltage
vs Collector Current
Figure 11. Equivalent Input Noise Current
vs Collector Current
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
Typical Characteristics (Continuce)
1,000,000
100,000
10,000
1,000
1,000,000
100,000
10,000
VCE = - 5V
f = 100 Hz
BANDWIDTH = 15 Hz
1,000
VCE = - 5V
f = 10 kHz
S
BANDWIDTH = 1.5 kHz
100
100
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I
- COLLECTOR CURRENT (mA)
I
- COLLECTOR CURRENT (mA)
C
C
Figure 13. Contours of Constanct
Narrow Band Noise Figure
Figure 14. Contours of Constanct
Narrow Band Noise Figure
1,000,000
100,000
10,000
1,000
10,000
5,000
VCE = - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
2,000
1,000
500
4.
0
d
B
V CE = - 5V
f = 10 MHz
BANDWIDTH
= - 2 kHz
200
100
100
0.001
0.01
0.1
1
10
0.01
0.1
1
I
- COLLECTOR CURRENT (mA)
C
I
- COLLECTOR CURRENT (mA)
C
Figure 15. BContours of Constant
Narrow Band Noise Figure
Figure 16. Contours of Constant
Narrow Band Noisd Figure
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
Typical Common Emitter Characteristics (f = 1.0KHz)
100
10
1.6
1.4
1.2
1
h
h
oe
fe
h
and h
ie
fe
1
h
oe
0.8
0.6
0.4
f = 1.0 kHz
= -5.0V
f = 1.0 kHz
= 1.0 mA
h
5
0.1
0.01
ie
V
I
CE
C
°
T
A
= -25 C
°
T
A
= -25 C
0.1
0.2
0.5
1
2
10
0
-5
-10
-15
-20
-25
I C - COLLECTOR CURRENT (mA)
VCE- COLLECTOR-EMITTER VOLTAGE (V)
Typical Common Emitter Characteristics
Typical Common Emitter Characteristics
2
V
= -5.0V
CE
h
I
= 1.0 mA
ie
1.8
1.6
1.4
1.2
1
C
f = 1.0 kHz
h
h
fe
h
and h
oe
fe
oe
0.8
0.6
0.4
h
ie
-60
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE ( C)
°
Typical Common Emitter Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2003
Package Dimensions (Continued)
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™ LittleFET™
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MicroFET™
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GTO™
HiSeC™
I2C™
ImpliedDisconnect™ OCXPro™
ISOPLANAR™
MSX™
MSXPro™
OCX™
Quiet Series™
RapidConfigure™
RapidConnect™
TruTranslation™
UHC™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
UltraFET®
SILENT SWITCHER® VCX™
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Across the board. Around the world.™
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SuperSOT™-3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I5
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