MMPQ2907AS62Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, SOIC-16;
| 型号： | MMPQ2907AS62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, SOIC-16 |
| 文件： | 总7页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMB2907A
FFB2907A
MMPQ2907A
E2
B2
B4
C2
E1
E4
B3
E3
C1
B2
C1
E2
B1
E1
C4
C4
C2
B2
C3
SC70-6
B1
E2
C3
C2
pin #1
Mark: .2F
E1
B1
pin #1
C2
SOIC-16
C1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
C1
Mark:
SuperSOT -6
pin #1
Mark: .2F
MMPQ2907A
Dot denotes pin #1
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
60
V
V
5.0
V
4
Collector Current - Continuous
600
mA
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB2907A
FMB2907A
MMPQ2907A
PD
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
300
2.4
415
700
5.6
180
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
Each Die
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
60
V
Voltage*
V(BR)CBO
V(BR)EBO
IB
Collector-Base Breakdown Voltage
60
V
V
I
I
C = 10 µA, IE = 0
E = 10 µA, IC = 0
Emitter-Base Breakdown Voltage
Base Cutoff Current
5.0
VCB = 30 V, VEB = 0.5 V
VCE = 30 V, VBE = 0.5 V
50
50
nA
nA
ICEX
Collector Cutoff Current
Collector Cutoff Current
ICBO
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 125°C
0.02
20
µ
µ
A
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
75
100
100
100
50
300
Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
1.3
2.6
V
V
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 20 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 100 kHz
VEB = 2.0 V, IC = 0,
f = 100 kHz
250
6.0
12
MHz
pF
Output Capacitance
Cobo
Cibo
Input Capacitance
pF
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
ton
td
tr
Turn-off Time
Storage Time
Fall Time
VCC = 6.0 V, IC = 150 mA
IB1 = IB2 = 15 mA
toff
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.5
500
400
300
200
100
0
VCE = 5V
= 10
β
0.4
0.3
0.2
0.1
0
125 °C
25 °C
25 °C
125 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
0.4
0.2
0
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
4
β = 10
V
= 5V
CE
1
10
100
500
0.1
1
10
25
I C- COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
20
16
12
8
100
10
V
= 35V
CB
C
ib
1
0.1
C
ob
4
0.01
0
25
50
75
100
125
0.1
1
10
50
TA- AMBIE NT TEMP ERATURE ( C)
REVERSE BIAS VOLTAGE (V)
°
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Switching Times
Turn On and Turn Off Times
vs Collector Current
vs Collector Current
250
500
I
I
c
c
IB1= IB2
=
IB1= IB2=
10
10
400
300
200
100
0
200
150
100
50
V
= 15 V
V
= 15 V
cc
cc
t
s
t
f
t
t
off
r
t
on
t
d
0
10
10
100
- COLLECTOR CURRENT (mA)
1000
100
- COLLECTOR CURRENT (mA)
1000
I
I
C
C
Rise Time vs Collector
and Turn On Base Currents
Power Dissipation vs
Ambient Temperature
50
1
0.75
0.5
0.25
0
SOIC-16
20
10
5
SOT-6
t
= 15 V
r
30 ns
60 ns
SC70-6
2
1
10
100
500
0
25
50
75
100
125
150
I
- COLLECTOR CURRENT (mA)
C
TEMPERATURE ( C)
°
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0kHz)
Common Emitter Characteristics
Common Emitter Characteristics
5
1.3
1.2
1.1
1
h
oe
h
h
h
h
re
ie
h
and h
oe
fe
h
2
1
re
re
oe
h
fe
h
0.5
ie
h
ie
0.9
0.8
I
T
= -10mA
= 25oC
A
V
T
= -10 V
0.2
C
CE
= 25oC
h
fe
A
0.1
_
_
_
_
_
_
1
2
5
10
20
50
-4
-8
-12
-16
-20
I C - COLLECTOR CURRENT (mA)
VCE- COLLECTOR VOLTAGE (V)
Common Emitter Characteristics
1.5
1.4
1.3
1.2
1.1
1
I
V
= -10mA
= -10 V
h
h
h
h
C
fe
ie
CE
re
oe
h
oe
0.9
0.8
0.7
0.6
0.5
h
re
ie
4
h
h
fe
-40
-20
0
20
40
60
80
100
T A - AMBIENT TEMPERATURE (oC)
PNP Multi-Chip General Purpose Amplifier
(continued)
Test Circuits
- 30 V
200 Ω
1.0 KΩ
0
- 16 V
50 Ω
≤ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
- 6.0 V
1.5 V
1 KΩ
37 Ω
1.0 KΩ
0
- 30 V
50 Ω
≤ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
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FAST
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DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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