MOC8100TVM [FAIRCHILD]
暂无描述;型号: | MOC8100TVM |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 暂无描述 晶体 光电 晶体管 光电晶体管 输出元件 |
文件: | 总11页 (文件大小:269K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
September 2009
TIL111M, TIL117M, MOC8100M
General Purpose 6-Pin Phototransistor Optocouplers
Features
General Description
■ UL recognized (File # E90700)
The MOC8100M, TIL111M and TIL117M optocouplers
consist of a gallium arsenide infrared emitting diode
driving a silicon phototransistor in a 6-pin dual in-line
package.
■ VDE recognized (File #102497 for white package)
– Add option V (e.g., TIL111VM)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls
Schematic
Package Outlines
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
4 EMITTER
NC 3
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
T
Storage Temperature
All
All
All
All
-40 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
Operating Temperature
Lead Solder Temperature
OPR
T
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
2.94
EMITTER
I
DC/Average Forward Input Current
Reverse Input Voltage
All
60
3
mA
V
F
V
TIL111M
R
MOC8100M, TIL117M
6
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
All
All
3
A
F
P
LED Power Dissipation @ T = 25 °C
120
1.41
mW
D
A
Derate above 25°C
mW/°C
DETECTOR
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Emitter-Base Voltage
All
30
70
V
V
V
CEO
CBO
ECO
EBO
All
TIL111M, TIL117M
7
All
All
7
P
Detector Power Dissipation @ T = 25 °C
150
1.76
mW
D
A
Derate above 25°C
mW/°C
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
V
Input Forward Voltage
I = 16mA
T = 25°C
TIL111M
1.2
1.2
1.4
1.4
V
F
F
A
I = 10mA for
T = 0°C–70°C
MOC8100M,
TIL117M
F
A
MOC8100M,
T = -55°C
1.32
1.10
A
I = 16mA; for
F
T = +100°C
A
TIL117M
I
Reverse Leakage Current V = 3.0V
TIL111M, TIL117M
MOC8100M
0.001
0.001
10
10
µA
µA
R
R
V
= 6.0V
R
DETECTOR
BV
BV
BV
BV
Collector-Emitter
Breakdown Voltage
I
I
I
= 1.0mA, I = 0
All
30
70
7
100
120
10
V
V
V
V
CEO
CBO
EBO
ECO
C
C
E
F
Collector-Base
Breakdown Voltage
= 10µA, I = 0
All
All
F
Emitter-Base Breakdown
Voltage
= 10µA, I = 0
F
Emitter-Collector
I = 100µA, I = 0
TIL111M, TIL117M
7
10
F
F
Breakdown Voltage
I
Collector-Emitter Dark
Current
V
V
V
= 10V, I = 0
TIL111M, TIL117M
MOC8100M
1
50
25
50
nA
nA
µA
CEO
CE
CE
CE
F
= 5V, T = 25°C
0.5
0.2
A
= 30V, I = 0, T = 70°C
TIL117M,
F
A
MOC8100M
I
I
Collector-Base Dark
Current
V
V
V
= 10V
= 5V
TIL111M, TIL117M
MOC8100M
All
20
10
nA
nA
pF
CBO
CBO
CB
CB
CE
C
Capacitance
= 0V, f = 1MHz
8
CE
*All Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
3
Electrical Characteristics (Continued) (T = 25°C unless otherwise specified.)
A
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min Typ* Max Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio,
Collector to Emitter
I = 10mA, V = 10V
TIL117M
50
50
30
%
%
CE
F
CE
I = 1mA, V = 5V
MOC8100M
F
CE
I = 1mA, V = 5V,
F
CE
T = 0°C to +70°C
A
I
On-State Collector Current I = 16mA, V = 0.4V
(Phototransistor Operation)
TIL111M
2
7
mA
µA
V
C(ON)
F
CE
On-State Collector Current I = 16mA, V = 0.4V
F
CB
(Photodiode Operation)
V
Collector-Emitter Saturation I = 500µA, I = 10mA
TIL117M
TIL111M
0.4
0.4
0.5
CE (SAT)
C
F
Voltage
I = 2mA, I = 16mA
C
F
I = 100µA, I = 1mA
MOC8100M
C
F
AC CHARACTERISTICS
T
Turn-On Time
I = 2mA, V = 10V,
MOC8100M
TIL117M
20
10
20
10
µs
µs
µs
µs
ON
C
CC
R = 100Ω (Fig. 11)
L
T
Turn-Off Time
MOC8100M
TIL117M
OFF
t
Rise Time
Fall Time
Rise Time
MOC8100M
TIL117M
2
2
r
t
f
t
I
= 2mA, V = 10V,
TIL111M
10
r
C(ON)
CC
(Phototransistor Operation) R = 100Ω (Fig. 11)
L
t
Fall Time
f
(Phototransistor Operation)
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
V
R
C
Input-Output Isolation Voltage
Isolation Resistance
f = 60Hz, t = 1 sec.
7500
V
AC(rms)
ISO
ISO
ISO
11
V
= 500 VDC
10
Ω
I-O
Isolation Capacitance
V
= 0, f = 1MHz
0.2
pF
I-O
*All Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
4
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
I-IV
I-IV
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
Input to Output Test Voltage, Method b,
1594
V
V
PR
peak
V
x 1.875 = V , 100% Production Test
IORM
PR
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
1275
peak
V
x 1.5 = V , Type and Sample Test
PR
IORM
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
V
850
6000
7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
Ω
External Clearance
7
Insulation Thickness
0.5
9
RIO
Insulation Resistance at Ts, V = 500V
10
IO
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
5
Typical Performance Characteristics
Fig. 1 LED Forward Voltage vs. Forward Current
Fig. 2 Normalized CTR vs. Forward Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0V
Normalized to
= 10mA
CE
= 25˚C
1.7
1.6
1.5
1.4
I
A
F
T
= -55°C
= 25°C
= 100°C
A
1.3
1.2
1.1
1.0
T
A
A
T
0
2
4
6
8
10
12
14
16
18
20
1
10
100
I
– FORWARD CURRENT (mA)
F
I
– LED FORWARD CURRENT (mA)
F
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
Fig. 4 CTR vs. RBE (Unsaturated)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.0
0.8
0.6
0.4
0.2
I
F
= 20mA
I
= 5mA
F
I
= 10mA
F
I
= 5mA
F
I
I
= 10mA
F
= 20mA
F
V
= 5.0V
CE
Normalized to:
I
T
= 10mA
= 25˚C
F
A
10
100
1000
R
– BASE RESISTANCE (kΩ)
BE
-60
-40
-20
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (˚C)
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
Fig. 5 CTR vs. RBE (Saturated)
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
A
= 25˚C
10
1
V
= 0.3V
CE
I
= 20mA
F
I
= 10mA
= 5mA
F
I
F
= 2.5mA
0.1
I
F
I
F
= 20mA
0.01
0.001
I
F
= 5mA
I
F
= 10mA
10
100
1000
R
BE
– BASE RESISTANCE (kΩ)
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
6
Typical Performance Characteristics (Continued)
Fig. 7 Switching Speed vs. Load Resistor
1000
Fig. 8 Normalized t vs. R
on
BE
I
V
T
= 10mA
F
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
= 10V
CC
= 25˚C
A
V
I
R
10V
= 2mA
= 100Ω
CC =
C
L
100
10
1
T
f
T
off
T
on
T
r
10
100
1000
10000
100000
0.1
R
– BASE RESISTANCE (kΩ)
BE
0.1
1
10
100
R – LOAD RESISTOR (kΩ)
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized t vs. R
off
BE
V
T
= 10V
CE
A
1.4
= 25°
C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
100
10
1
V
10V
CC =
= 2mA
0.1
I
C
R
= 100Ω
L
0.01
0.001
10
100
1000
10000
100000
0
20
40
60
80
100
R
BE
– BASE RESISTANCE (kΩ)
T
A
– AMBIENTTEMPERATURE (°C)
TEST CIRCUIT
WAVEFORMS
V
CC = 10V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
I
I
Adjust
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 11. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
7
Package Dimensions
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
1
3
5.08 (Max.)
3.28–3.53
0.25–0.36
7.62 (Typ.)
5.08 (Max.)
3.28–3.53
0.25–0.36
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.20–0.30
(0.86)
15° (Typ.)
(0.86)
0.41–0.51
0.76–1.14
0.20–0.30
10.16–10.80
1.02–1.78
0.41–0.51
0.76–1.14
1.02–1.78
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.20–0.30
0.38 (Min.)
0.16–0.88
(8.13)
2.54 (Bsc)
(0.86)
0.41–0.51
0.76–1.14
1.02–1.78
Note:
All dimensions in mm.
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
8
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
TIL111M
TIL111SM
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
S
SR2
T
TIL111SR2M
TIL111TM
V
TIL111VM
VDE 0884
TV
TIL111TVM
TIL111SVM
TIL111SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
TIL111
X YY Q
6
V
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
9
Carrier Tape Specification
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 ± 0.05
4.0 ± 0.1
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
10
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
The Power Franchise®
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
QS™
Quiet Series™
RapidConfigure™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
SMART START™
SPM®
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOPLANAR®
FAST®
®
FastvCore™
FETBench™
PDP SPM™
Power-SPM™
Sync-Lock™
FlashWriter®
®
*
*
FPS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
www.fairchildsemi.com
11
相关型号:
MOC8100X
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-6
ISOCOM
MOC8100X-SMT&R
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, SURFACE MOUNT PACKAGE-6
ISOCOM
MOC8100XG
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-6
ISOCOM
MOC8100XSMT&R
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, SURFACE MOUNT PACKAGE-6
ISOCOM
MOC8101-SM
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, SURFACE MOUNT PACKAGE-6
ISOCOM
MOC8101-SMT&R
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, SURFACE MOUNT, DIP-6
ISOCOM
©2020 ICPDF网 联系我们和版权申明