MPS6534 [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | MPS6534 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
MPS6534
TO-92
C
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
40
V
V
Collector-Base Voltage
Emitter-Base Voltage
4.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
800
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPS6534
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
Rθ
°C/W
JA
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0
40
40
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
4.0
VCB = 30 V, IE = 0
50
nA
VCB = 30 V, IE = 0, TA = 60 °C
2.0
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 100 mA
60
90
50
270
VCE = 10 V, IC = 500 mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA
0.3
1.0
V
V
VCE(sat)
VBE(sat)
IC = 100 mA, IB = 10 mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 10 V, f = 1.0 MHz
6.0
pF
Cob
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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