MPSA42-D81Z [FAIRCHILD]
Transistor;
| 型号： | MPSA42-D81Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2009
MPSA42 / MMBTA42 / PZTA42
NPN High Voltage Amplifier
Features
• This device is designed for application as a video output to drive color CRT and other high voltage applications.
• Sourced from Process 48.
MPSA42
MMBTA42
PZTA42
C
C
E
E
C
B
B
SOT-23
Mark: 1D
TO-92
SOT-223
E B C
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
300
300
6
Units
V
VCBO
Collector-Base Voltage
Emitter-Base Voltage
V
VEBO
V
IC
Collector Current
- Continuous
500
mA
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA=25°C unless otherwise noted
Max
Symbol
Parameter
Total Device Dissipation
Units
MPSA42
*MMBTA42
**PZTA42
PD
625
5.0
240
1.92
1000
8.0
mW
mW/°C
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
515
125
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 2009 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. B2
www.fairchildsemi.com
1
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
300
300
6
V
V
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC = 100 μA, IE = 0
IE = 100 μA, IC = 0
VCB = 200 V, IE = 0
VEB = 6 V, IC = 0
V
ICBO
IEBO
Collector-Cutoff Current
Emitter-Cutoff Current
0.1
0.1
μA
μA
On Characteristics*
V
CE = 10 V, IC = 1.0 mA
25
40
40
hFE
DC Current Gain
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 20 mA, IB = 2.0 mA
IC = 20 mA, IB = 2.0 mA
0.5
0.9
V
V
Small Signal Characteristics
fT
Current Gain Bandwidth Product
Collector-Base Capacitance
IC = 10mA, VCE = 20V, f = 100MHz
VCB = 20 V, IE = 0, f = 1.0 MHz
50
MHz
pF
Ccb
3.0
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2009 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. B2
www.fairchildsemi.com
2
Typical Performance Characteristics
140
100
10
125oC
VCE=10V
120
100oC
75oC
100
25oC
80
1
60
100oC
-40oC
TA = 125oC
40
20
0
0.1
0.01
-40oC
75oC
25oC
1
10
100
1000
1
10
100
1000
IC- COLLECTOR CURRENT [mA]
IC- COLLECTOR CURRENT [mA]
Figure 1. DC Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TA = -40oC
-40oC
TA = 25oC
25oC
125oC
TA = 75oC
100oC
75oC
TA = 100oC
TA = 125oC
1
10
100
1
10
100
1000
IC- COLLECTOR CURRENT [mA]
IC- COLLECTOR CURRENT [mA]
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter ON Voltage
vs Collector Current
100
CIB
10
COB
1
0
2
4
6
8
10
12
14
16
18
20
REVERSE BIAS VOLTAGE [V]
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
© 2009 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. B2
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
1.0
SOT-223
0.8
0.6
TO-92
0.4
0.2
SOT-23
0.0
0
25
50
75
100
125
150
TC - CASE TEMPERATURE [oC]
Figure 7. Power Dissipation
vs Ambient Temperature
© 2009 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. B2
www.fairchildsemi.com
4
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
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CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
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FRFET®
Global Power ResourceSM
Green FPS¥
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Gmax™
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RapidConfigure¥
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TinyLogic®
GTO¥
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ISOPLANAR¥
MegaBuck™
MICROCOUPLER¥
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TINYOPTO¥
TinyPower¥
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TinyWire¥
TriFault Detect¥
TRUECURRENT¥*
PSerDes¥
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START¥
SPM®
®
MicroPak¥
STEALTH™
SuperFET¥
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS™
SyncFET™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
Fairchild®
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FACT Quiet Series™
FACT®
UHC®
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®
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Sync-Lock™
®
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PDP SPM™
Power-SPM¥
*
FlashWriter®
*
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
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under Sales Support.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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