MPSA43 [FAIRCHILD]

NPN High Voltage Amplifier; NPN高电压放大器
MPSA43
型号: MPSA43
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

NPN High Voltage Amplifier
NPN高电压放大器

晶体 放大器 晶体管 开关
文件: 总3页 (文件大小:30K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Discr ete P OWER & Sign a l  
Tech n ologies  
MPSA43  
MMBTA43  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 1E  
E
NPN High Voltage Amplifier  
This device is designed for application as a video output to  
drive color CRT and other high voltage applications. Sourced  
from Process 48. See MPSA42 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
200  
200  
6.0  
V
V
V
Collector Current - Continuous  
200  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA43  
*MMBTA43  
PD  
Total Device Dissipation  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
Derate above 25 C  
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
ã 1997 Fairchild Semiconductor Corporation  
NPN High Voltage Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0  
200  
200  
6.0  
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
I = 100 A, I = 0  
µ
C
E
I = 100 A, I = 0  
µ
E
C
VCB = 160 V, IE = 0  
VEB = 4.0 V, IC = 0  
0.1  
0.1  
A
A
µ
µ
IEBO  
Emitter-Cutoff Current  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
IC = 1.0 mA, VCE = 10 V  
IC = 10 mA, VCE = 10 V  
IC = 30 mA, VCE = 10 V  
IC = 20 mA, IB = 2.0 mA  
25  
40  
50  
200  
0.4  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
VCE(sat)  
VBE(sat)  
IC = 20 mA, IB = 2.0 mA  
0.9  
V
SMALL SIGNAL CHARACTERISTICS  
fT  
Current Gain - Bandwidth Product  
IC = 10 mA, VCE = 20 V,  
f = 100 MHz  
VCB = 20 V, IE = 0, f = 1.0 MHz  
50  
MHz  
pF  
Collector-Base Capacitance  
4.0  
Ccb  
*Pulse Test: Pulse Width £300 ms, Duty Cycle £2.0%  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
CoolFET™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench™  
QS™  
CROSSVOLT™  
E2CMOSTM  
FACT™  
FACT Quiet Series™  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
TinyLogic™  
FAST®  
FASTr™  
GTO™  
HiSeC™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  

相关型号:

MPSA43-18

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
MOTOROLA

MPSA43-5

500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR
MOTOROLA

MPSA43-AB3-R

HIGH VOLTAGE TRANSISTOR
UTC

MPSA43-AMMO

TRANSISTOR 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP

MPSA43-AP

NPN Silicon High Voltage Transistor 625mW
MCC

MPSA43-AP-HF

暂无描述
MCC

MPSA43-BP

Small Signal Bipolar Transistor, 0.3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC

MPSA43-BP-HF

Small Signal Bipolar Transistor,
MCC

MPSA43-STYLE-B

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ALLEGRO

MPSA43-STYLE-D

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ALLEGRO

MPSA43-STYLE-G

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ALLEGRO

MPSA43-T/R

100mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN
NXP