MPSW3725J18Z [FAIRCHILD]
Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-226, 3 PIN;
| 型号： | MPSW3725J18Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-226, 3 PIN |
| 文件： | 总8页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSW3725
TO-226
C
B
E
NPN Transistor
This device is designed for high current, low impedance line
driver applications. Sourced from Process 26.
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
60
V
V
V
A
Collector-Base Voltage
Emitter-Base Voltage
6.0
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSW3725
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
1.0
8.0
125
W
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
50
°C/W
1999 Fairchild Semiconductor Corporation
NPN Transistor
(continued)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
Collector-Emitter Breakdown
Voltage*
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
IC = 10 mA, IB = 0
40
60
V
V
I
I
C = 10 µA, VBE = 0
C = 100 µA, ICE = 0
V(BR)CBO
V(BR)EBO
ICBO
60
V
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
6.0
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 100°C
100
10
nA
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC=100mA,VCE=1.0V,TA=-55°C
IC = 300 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC=500mA,VCE=1.0V,TA=-55°C
IC = 800 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 5.0 V
30
60
30
40
35
20
20
25
180
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
V
V
V
V
V
V
V
V
V
V
V
V
VCE(sat)
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
VBE(sat)
1.2
1.5
1.7
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
250
MHz
pF
Output Capacitance
25
Cobo
Cibo
Input Capacitance
100
pF
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
VCC = 30 V, VBE = 3.8 V,
IC = 500 mA, IB1 = 50 mA
22
10
ns
ns
ns
ns
ns
ns
ton
td
12
tr
Turn-off Time
Storage Time
Fall Time
VCC = 30 V, IC = 500mA
IB1 = IB2 = 50 mA
250
235
15
toff
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
NPN Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
200
0.4
0.3
0.2
0.1
0
VCE = 1.0V
β = 1 0
150
100
50
125 °
C
125 °C
25 °C
25 °C
- 40 °C
- 40 °C
0
0.001
0.01
0.1
1
1
10
100
1000
I C - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
= 1.0V
Base-Emitter Saturation
Voltage vs Collector Current
1.2
1
V
CE
β = 10
0.8
0.6
0.4
0.2
- 40 °C
25 °C
- 40 °C
0.8
0.6
0.4
0.2
0
25 °C
125 °C
125 °C
0.1
1
10
25
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input / Output Capacitance
vs Reverse Bias
Collector-Cutoff Current
vs Ambient Temperature
150
100
10
1
100
F = 1 MHz
100
50
VCB= 40V
C ibo
50
10
25
5
C obo
0.1
25
1
0.1
50
75
100
125
150
1
10
50
T A - AM BIENT TE MPE RATURE ( C)
REVERSE BIAS VOLTAGE (V)
°
NPN Transistor
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Contours of Constant
Ambient Temperature
Bandwidth Product (fT)
1
0.75
0.5
10
450 MHz
TO-226
400 MHz
1
350 MHz
250 MHz
0.25
0
100 MHz
0.1
10
50
100
500
1000
0
25
50
75
100
125
150
TEMPERATURE (oC)
IC - COLLECTOR CURRENT (mA)
NPN Transistor
(continued)
Typical Characteristics (continued)
Storage Time vs. Turn On
Storage Time vs. Turn On
and Turn Off Base Currents
and Turn Off Base Currents
300
200
150
100
50
I C= 500 mA
t
= 20 ns
s
VCC = 30V
25 ns
t
= 20 ns
s
200
100
0
35 ns
50 ns
45 ns
40 ns
I C = 800 mA
VCC = 30V
0
0
50
100
150
200
0
100
200
300
IB1- TURN ON BASE CURRENT (mA)
IB1- TURN ON BASE CURRENT (mA)
Storage Time vs. Turn On
and Turn Off Base Currents
Rise Time vs. Collector and
Turn On Base Currents
50
40
30
20
10
0
100
t
= 3 ns
r
50
40
5 ns
8 ns
t
= 20 ns
s
30
40 ns
60 ns
80 ns
20
I C= 100 mA
VCC = 30V
VCC = 30V
15 ns
10
0
10
20
30
40
50
50
100
200
300 400 500
IB1 - TURN ON BASE CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
NPN Transistor
(continued)
Typical Characteristics (continued)
Fall Time vs. Turn On
Fall Time vs. Turn On
and Turn Off Base Currents
and Turn Off Base Currents
200
300
200
100
0
I C = 800 mA
VCC = 30V
t
= 5 ns
6 ns
f
150
100
50
t
= 10 ns
f
7 ns
15 ns
10 ns
I C= 500 mA
VCC = 30V
20 ns
0
0
50
100
150
200
0
100
200
300
IB1 - TURN ON BASE CURRENT (mA)
IB1 - TURN ON BASE CURRENT (mA)
Fall Time vs. Turn On
and Turn Off Base Currents
50
40
30
20
10
0
I C = 100 mA
VCC = 30V
t
= 12 ns
f
15 ns
30 ns
0
10
20
30
40
50
IB1 - TURN ON BASE CURRENT (mA)
NPN Transistor
(continued)
Test Circuit
- 3.8 V
30V
15 Ω
43 Ω
VIN
= 9.7 V
VOUT
tr and tf ≤ 1 ns
PW = 1.0 µs
ZIN = 50 Ω
1.0 KΩ
1.0 µF
Duty Cycle < 2%
10 µF
62 Ω
100 Ω
V
To sampling scope
IN
tr < 1.0 ns
ZIN ≥ 100 KΩ
FIGURE 1: Switching Time Test Circuit
(IC = 500 mA, IB1 = 50 mA, IB2 = 50 mA)
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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