NDB603ALS62Z [FAIRCHILD]
Power Field-Effect Transistor, 25A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB;
| 型号： | NDB603ALS62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 25A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| 文件： | 总5页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 1996
NDP603AL / NDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
25A, 30V. RDS(ON) = 0.022W @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
minimize on-state resistance.
These devices are
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
particularly suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
High density cell design for extremely low RDS(ON)
.
175°C maximum junction temperature rating.
______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP603AL
NDB603AL
Units
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
30
± 20
V
V
A
VDSS
VGSS
ID
25 (Note 1)
100
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
W
W/°C
°C
0.4
Operating and Storage Temperature Range
-65 to 175
275
TJ,TSTG
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.5
°C/W
°C/W
R
JC
q
62.5
R
JA
q
© 1997 Fairchild Semiconductor Corporation
NDP603AL.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 2)
WDSS
IAR
Single Pulse Drain-Source Avalanche
Energy
VDD = 15 V, ID = 25 A
100
25
mJ
A
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
30
V
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
10
µA
nA
nA
100
-100
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
1.1
0.7
1.4
1
1.5
1.1
3
2.2
V
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 10 mA
VGS = 10 V, ID = 25 A
TJ = 125oC
TJ = 125oC
TJ = 125oC
1.85
1.5
3
2.2
Static Drain-Source On-Resistance
0.019
0.028
0.031
0.022
0.045
0.04
RDS(ON)
W
VGS = 4.5 V, ID = 10 A
VGS = 10 V, VDS = 10 V
VGS = 4.5 V, VDS = 10 V
VDS = 10 V, ID = 25 A
ID(on)
On-State Drain Current
60
15
A
S
gFS
Forward Transconductance
18
DYNAMIC CHARACTERISTICS
Input Capacitance
1100
540
pF
pF
pF
Ciss
Coss
Crss
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
175
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = 15 V, ID = 25 A,
VGS = 10 V, RGEN = 24 W
15
70
90
80
28
5
30
110
150
130
40
ns
ns
ns
ns
Qg
Qgs
Qgd
VDS = 10 V,
ID = 25 A, VGS = 10 V
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
7
7
10
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
25
A
V
IS
1.3
VSD
VGS = 0 V, IS = 25 A (Note 2)
Note:
1. Maximum DC current limited by the package.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDP603AL.SAM
Typical Electrical Characteristics
80
3
2.5
2
VGS =10V
8.0
7.0
VGS = 4V
6.0
4.5
60
5.0
5.0
40
6.0
4.5
1.5
1
7.0
8.0
10
4.0
20
0
3.0
0.5
0
20
40
, DRAIN CURRENT (A)
60
80
0
1
2
3
4
5
V
, DRAIN-SOURCE VOLTAGE (V)
I
D
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
1.6
2.5
ID = 25A
VGS =10V
VGS = 10V
1.4
1.2
1
2
T
= 125°C
J
1.5
1
25°C
0.8
0.6
-55°C
0.5
-50
-25
0
25
50
75
100
125
150
175
0
20
40
, DRAIN CURRENT (A)
60
80
T
, JUNCTION TEMPERATURE (°C)
I
D
J
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
40
30
20
10
0
0.05
T
= -55°C
VDS = 10V
VDS = 10V
J
25
125
0.04
0.03
0.02
0.01
0
T
= 125°C
J
25°C
-55°C
1
2
3
4
5
6
0.5
1
1.5
2
2.5
V
, GATE TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
GS
GS
Figure 6.
Sub-threshold Drain Current Variation
Figure 5.
Drain Current Variation with Gate
with Gate Voltage and Temperature.
Voltage and Temperature.
NDP603AL.SAM
Typical Electrical Characteristics (continued)
2.2
1.12
1.08
1.04
1
VDS = VGS
ID = 250µA
2
1.8
1.6
1.4
1.2
1
I D = 10mA
1mA
250uA
0.96
0.92
0.8
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
T
, JUNCTION TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
J
J
Figure 7. Gate Threshold Variation with
Temperature
Figure 8. Breakdown Voltage Variation with
Temperature.
2500
2000
10
ID = 25A
VDS = 5V
C
10
iss
8
20
1000
500
6
C
oss
4
2
0
300
200
C
rss
f = 1 MHz
VGS = 0V
100
0.1
0.2
0.5
1
2
5
10
20 30
0
5
10
Q
15
20
25
30
V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
g
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
r
t
tf
t d(on)
90%
90%
RL
VIN
D
VOUT
Output, V
Input, V
out
10%
90%
10%
VGS
Inverted
RGEN
DUT
G
50%
in
50%
10%
S
Pulse Width
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
NDP603AL.SAM
Typical Electrical Characteristics (continued)
25
40
20
10
5
T
= -55°C
J
VGS = 0V
20
15
10
5
25°C
2
1
T
= 125°C
J
25°C
0.5
-55°C
125°C
0.2
0.1
VDS = 10V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
10
20
, DRAIN CURRENT (A)
30
40
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
I
D
Figure 13. Transconductance Variation with Drain
Current and Temperature
Figure 14. Body Diode Forward Voltage
Variation with Current and Temperature
150
100
50
20
10
5
VGS = 20V
2
1
SINGLE PULSE
TC = 25°C
0.5
0.1
0.5
1
2
5
10
30
50
V
, DRAIN-SOURCE VOLTAGE(V)
DS
Figure 15. Maximum Safe Operating Area
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
qJC
qJC
= 2.5 °C/W
R
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
0.01
t1
t 2
0.03
0.02
T
- T = P * R
(t)
Single Pulse
J
C
q
JC
Duty Cycle, D = t1 /t2
0.01
0.01
0.1
1
10
100
1000
t1 ,TIME (ms)
Figure 16. Transient Thermal Response Curve
NDP603AL.SAM
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