NDB610A [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | NDB610A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 1994
NDP610A / NDP610AE / NDP610B / NDP610BE
NDB610A / NDB610AE / NDB610B / NDB610BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
26 and 24A, 100V. RDS(ON) = 0.065 and 0.080W.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON)
.
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
NDP610A NDP610AE
NDB610A NDB610AE
NDP610B NDP610BE
NDB610B NDB610BE
Symbol Parameter
Units
V
VDSS
VDGR
VGSS
Drain-Source Voltage
100
100
±20
±40
V
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
V
V
- Nonrepetitive (tP < 50 ms)
Drain Current - Continuous
- Pulsed
ID
26
24
96
A
104
A
PD
100
W
Total Power Dissipation @ TC = 25°C
Derate above 25°C
0.67
W/°C
°C
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
275
TL
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
°C
© 1997 Fairchild Semiconductor Corporation
NDP610.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Type
Min Typ
Max Units
EAS
Single Pulse Drain-Source
Avalanche Energy
VDD = 25 V, ID = 26 A
NDP610AE
NDP610BE
NDB610AE
NDB610BE
250
26
mJ
A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
ALL
ALL
100
V
Voltage
IDSS
Zero Gate Voltage Drain
Current
VDS = 100 V,
VGS = 0 V
250
1
µA
mA
nA
TJ = 125°C
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2)
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V
ALL
ALL
100
-100
Gate - Body Leakage, Reverse
nA
VGS = -20 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
ALL
2
3
4
V
V
VDS = VGS,
ID = 250 µA
1.4
2.3
3.2
TJ = 125°C
RDS(ON)
Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 13 A
NDP610A
NDP610AE
NDB610A
0.048 0.065
W
0.086 0.13
0.08
TJ = 125°C NDB610AE
W
W
VGS = 10 V,
ID = 12 A
NDP610B
NDP610BE
NDB610B
TJ = 125°C NDB610BE
0.16
W
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
NDP610A
NDP610AE
NDB610A
NDB610AE
26
24
10
A
NDP610B
NDP610BE
NDB610B
NDB610BE
A
S
gFS
Forward Transconductance
VDS = 10 V, ID = 13 A
ALL
16
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
ALL
ALL
ALL
1430 1800 pF
C
iss
Output Capacitance
280
85
500
200
pF
pF
Coss
Crss
Reverse Transfer Capacitance
NDP610.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions
SWITCHING CHARACTERISTICS (Note 2)
Type
Min Typ
Max Units
tD(ON)
Turn - On Delay Time
Turn - On Rise Time
VDD = 50 V, ID = 26 A,
VGS = 10 V, RGEN = 7.5 W
ALL
ALL
11
72
20
nS
nS
120
tr
tD(OFF)
Turn - Off Delay Time
Turn - Off Fall Time
ALL
ALL
40
52
65
85
nS
nS
tf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 80 V,
ID = 26 A, VGS = 10V
ALL
ALL
ALL
47
8
65
nC
nC
nC
22
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward VGS = 0 V,
NDP610A
NDP610AE
NDB610A
NDB610AE
26
24
A
A
A
A
NDP610B
NDP610BE
NDB610B
NDB610BE
ISM
NDP610A
NDP610AE
NDB610A
NDB610AE
104
96
NDP610B
NDP610BE
NDB610B
NDB610BE
VSD
(Note 2)
ALL
0.88
0.83
108
1.3
1.2
V
V
Voltage
IS = 13 A
TJ = 125°C
Reverse Recovery Time
Reverse Recovery Current
VGS = 0 V, IS = 26 A,
dIS/dt = 100 A/µs
ALL
ALL
155
ns
trr
Irr
7.4
11
A
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ALL
ALL
1.5
°C/W
°C/W
RqJC
62.5
RqJA
Notes:
1. NDP610A/610B and NDB610A/610B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
NDP610.SAM
Typical Electrical Characteristics
70
2.5
2
VGS = 20V
12
VGS = 5V
10
60
8.0
6.0
50
40
30
20
10
0
7.0
7.0
8.0
10
1.5
1
12
20
6.0
5.0
0.5
0
2
4
6
8
0
10
20
30
40
50
60
70
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.5
2
4
3
2
1
0
ID = 13A
VGS = 10V
VGS = 10V
T
= 125°C
J
1.5
1
25°C
-55°C
0.5
-50
-25
0
25
50
75
100
125
150
175
0
20
40
, DRAIN CURRENT (A)
60
80
T
, JUNCTION TEMPERATURE (°C)
I
J
D
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
with Temperature.
Drain Current and Temperature.
40
30
20
10
0
1.2
1.1
1
T
= -55°C
25
J
VDS = V
VDS = 10V
GS
125
I D = 250µA
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
175
2
3
4
5
6
7
8
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDP610.SAM
Typical Electrical Characteristics (continued)
1.15
30
10
I
= 250µA
VGS = 0V
D
1.1
1.05
1
T
= 125°C
J
25°C
-55°C
1
0.1
0.95
0.9
-50
-25
0
25
50
75
100
125
150
175
0.01
0.2
0.4
V
0.6
0.8
1
1.2
T
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
Variation with Temperature.
20
3000
V DS= 20V
ID = 26A
2000
50
C
C
iss
80
15
10
5
1000
oss
300
200
f = 1 MHz
V GS = 0V
C
rss
100
50
0
0
20
40
60
80
0.1
0.2
0.5
1
2
5
10
20
50
Q
, GATE CHARGE (nC)
V
, DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
INVERTED
DUT
G
V
50%
50%
IN
S
10%
PULSE W IDTH
Figure 36. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP610.SAM
Typical Electrical Characteristics (continued)
25
VDS = 10V
L
VGS = 10V
+
T
= -55°C
25°C
J
tp
20
15
10
5
VDD
-
tp is adjusted to reach
125°C
the desired peak inductive
current, I L
.
BV DSS
tp
I L
VDD
0
0
5
10
15
20
25
30
I
, DRAIN CURRENT (A)
D
Figure 13. Transconductance Variation
Figure 14. Unclamped Inductive Load
with Drain Current and Temperature.
Circuit and Waveforms.
200
100
50
10
5
VGS = 20V
SINGLE PULSE
TC = 25°C
2
1
0.5
1
2
3
5
10
20
50
100 150
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 15. Maximum Safe Operating Area.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 1.5 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
t1
t2
- T = P * R
J
0.03
0.01
T
(t)
Single Pulse
C
q
JC
0.02
Duty Cycle, D = t1 /t2
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
t1 ,TIME (ms)
Figure 16. Transient Thermal Response Curve.
NDP610.SAM
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