NDH8304 [FAIRCHILD]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | NDH8304 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 1997
NDH8304P
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
-2.7 A, -20 V. RDS(ON) = 0.07 W @ VGS = -4.5 V
RDS(ON) = 0.095 W @ VGS = -2.7 V.
SuperSOTTM-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________________
4
5
6
3
2
7
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Units
NDH8304P
Drain-Source Voltage
-20
V
V
A
VDSS
VGSS
ID
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
±8
-2.7
-10
0.8
(Note 1)
(Note 1)
Maximum Power Dissipation
W
PD
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1)
Thermal Resistance, Junction-to-Case
156
40
°C/W
°C/W
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDH8304P Rev.C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -16 V, VGS = 0 V
-20
V
Zero Gate Voltage Drain Current
-1
µA
µA
nA
nA
-10
TJ= 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = - 250 µA
VGS = -4.5 V, ID = -2.7 A
-0.4
-0.3
-0.7
-0.5
-1
V
-0.8
TJ= 125°C
TJ= 125°C
RDS(ON)
Static Drain-Source On-Resistance
0.061
0.087
0.082
0.07
0.125
0.095
W
VGS = -2.7 V, ID = -2.3 A
VGS = -4.5 V, VDS = -5 V
VGS = -2.7 V, VDS = -5 V
VDS = -5 V, ID = -2.7 A
On-State Drain Current
-10
-3
A
S
ID(on)
Forward Transconductance
8
gFS
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
865
415
150
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
11
25
78
55
16
2.4
5.1
22
50
ns
ns
tD(on)
tr
tD(off)
tf
VDD = -5 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 W
150
100
23
ns
ns
nC
nC
nC
Qg
Qgs
Qgd
VDS = -10 V,
ID = -2.7 A, VGS = -4.5 V
Gate-Source Charge
Gate-Drain Charge
NDH8304P Rev.C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max
Units
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
-0.67
-1.2
A
V
IS
-0.7
VSD
VGS = 0 V, IS = -0.67 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T
J- T
T
J- T
A
A
PD
=
=
= I2D (t) ´ RDS(ON )
J
+R CA(t)
( )
t
T
R
qJA(t)
R
q
q
JC
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH8304P Rev.C
Typical Electrical Characteristics
2.5
2
-15
-3.5
VGS =-4.5V
-3.0
-2.7
-2.5
VGS = -2.0V
-12
-9
-6
-3
0
-2.5
1.5
1
-2.7
-2.0
-3.0
-3.5
-4.5
-1.5
0.5
0
-3
-6
-9
-12
-15
0
-1
-2
-3
-4
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.6
1.8
ID = -2.7A
VGS = -4.5V
1.6
1.4
1.2
1
V GS = -4.5V
1.4
1.2
1
T = 125°C
J
25°C
0.8
0.6
0.4
-55°C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
-3
-6
-9
-12
-15
T
, JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
J
D
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 3. On-Resistance Variation with
Temperature.
-8
-6
-4
-2
0
1.2
T
= -55°C
VDS = -5V
J
VDS = VGS
25°C
125°C
1.1
I D = -250µA
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
-0.5
-1
-1.5
-2
-2.5
T
, JUNCTION TEMPERATURE (°C)
J
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 6. Gate Threshold Variation with
Temperature.
Figure 5. Transfer Characteristics.
NDH8304P Rev.C
Typical Electrical Characteristics
10
3
1.1
VGS = 0V
ID = -250µA
1.08
T
= 125°C
J
1
1.06
1.04
1.02
1
0.5
25°C
0.1
0.01
-55°C
0.98
0.96
0.94
0.001
0.0001
-50
-25
0
T
25
50
75
100
125
150
0
0.2
-V
0.4
0.6
0.8
1
1.2
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 8. Body Diode Forward Voltage
Figure 7. Breakdown Voltage Variation with
Temperature.
Variation with Current and Temperature.
2500
1500
5
4
3
2
1
0
VDS = -5V
I D = -2.7A
-10V
-15V
1000
C
iss
C
oss
500
300
200
f = 1 MHz
VGS = 0 V
C
rss
100
0.1
0.2
-V
0.5
1
2
5
10
20
0
5
10
15
20
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
DS
g
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
-VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
V
VGS
OUT
RGEN
DUT
G
10%
10%
90%
S
V
50%
50%
IN
10%
INVERTED
PULSE WIDTH
Figure 12. Switching Waveforms.
Figure 11. Switching Test Circuit.
NDH8304P Rev.C
Typical Electrical and Thermal Characteristics
15
10
20
V DS = -4.5V
5
T
= -55°C
J
16
12
8
2
1
25°C
0.5
125°C
V
GS = -4.5V
SINGLE PULSE
= See Note 1
0.1
0.05
R
4
JA
q
TA = 25°C
0.01
0
0.1
0.2
0.5
1
2
5
10
20 30
0
-4
-8
-12
-16
-20
- V
, DRAIN-SOURCE VOLTAGE (V)
DS
ID , DRAIN CURRENT (A)
Figure 14. Maximum Safe Operating Area.
Figure 13. Transconductance Variation with Drain
Current and Temperature.
1
D = 0.5
R
(t) = r(t) * R
JA
q
JA
q
R
= See Note 1
0.2
JA
q
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
T
- T = P * R
(t)
JA
Single Pulse
J
A
q
Duty Cycle, D = t 1/ t
2
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 15. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1 .Transient thermal response will change
depending on the circuit board design.
NDH8304P Rev.C
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