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NDH834P [FAIRCHILD]

P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
NDH834P
型号： NDH834P
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

P-Channel Enhancement Mode Field Effect Transistor
P沟道增强型场效应晶体管

晶体 晶体管 场效应晶体管 开关 光电二极管
文件： 总8页 (文件大小：85K)
中文：  中文翻译
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May 1997  
NDH834P  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
-5.6 A, -20 V. RDS(ON) = 0.035 W @ VGS = -4.5 V  
SuperSOTTM-8 P-Channel enhancement mode power field  
effect transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance  
and provide superior switching performance. These devices  
are particularly suited for low voltage applications such as  
battery powered circuits or portable electronics where fast  
switching, low in-line power loss, and resistance to transients  
are needed.  
RDS(ON) = 0.045 W @ VGS = -2.7V.  
Proprietary SuperSOTTM-8 package design using copper  
lead frame for superior thermal and electrical capabilities.  
High density cell design for extremely low RDS(ON)  
.
Exceptional on-resistance and maximum DC current  
capability.  
____________________________________________________________________________________________  
5
4
3
2
1
6
7
8
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol Parameter  
NDH834P  
-20  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
V
V
A
±8  
(Note 1a)  
-5.6  
-15  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.8  
W
PD  
1
(Note 1c)  
0.9  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
70  
20  
°C/W  
°C/W  
© 1997 Fairchild Semiconductor Corporation  
NDH834P Rev.C  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
BVDSS  
IDSS  
Drain-Source Breakdown Voltage  
VGS = 0 V, ID = -250 µA  
VDS = -16 V, VGS = 0 V  
-20  
V
Zero Gate Voltage Drain Current  
-1  
µA  
µA  
nA  
nA  
TJ = 55oC  
-10  
Gate - Body Leakage, Forward  
Gate - Body Leakage, Reverse  
100  
-100  
IGSSF  
IGSSR  
VGS = 8 V, VDS = 0 V  
VGS = -8 V, VDS= 0 V  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
-0.4  
-0.3  
-0.62  
-0.4  
-1  
V
VGS(th)  
VDS = VGS, ID = -250 µA  
VGS = -4.5 V, ID = -5.6 A  
TJ = 125oC  
TJ = 125oC  
-0.8  
Static Drain-Source On-Resistance  
0.029  
0.039  
0.038  
0.035  
0.063  
0.045  
RDS(ON)  
W
VGS = -2.7 V, ID = -5.2 A  
VGS = -4.5 V, VDS = -5 V  
VGS = -2.7 V, VDS = -5 V  
VDS = - 5 V, ID = -5.6 A  
On-State Drain Current  
-15  
-5  
A
S
ID(on)  
Forward Transconductance  
18  
gFS  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
1820  
745  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
VDS = -15 V, VGS = 0 V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
270  
SWITCHING CHARACTERISTICS (Note 2)  
tD(on)  
tr  
tD(off)  
tf  
Turn - On Delay Time  
Turn - On Rise Time  
Turn - Off Delay Time  
Turn - Off Fall Time  
Total Gate Charge  
VDD = -5 V, ID = -1 A,  
15  
36  
30  
70  
ns  
ns  
VGEN = -4.5 V, RGEN = 6 W  
145  
85  
280  
160  
13  
ns  
ns  
Qg  
Qgs  
Qgd  
VDS = -10 V,  
ID = -5.6 A, VGS = -4.5 V  
9.3  
2.3  
1.1  
nC  
nC  
nC  
Gate-Source Charge  
Gate-Drain Charge  
NDH834P Rev.C  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Symbol Parameter Conditions  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Min  
Typ  
Max  
Units  
Maximum Continuous Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage  
-1.5  
-1.2  
A
V
IS  
-0.7  
VSD  
Notes:  
VGS = 0 V, IS = -1.5 A (Note 2)  
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by  
design while RqCA is determined by the user's board design.  
T - T  
T - T  
J A  
= I2D (t) ´ RDS(ON )  
J
J
A
( )  
PD t =  
=
T
R
qJA(t)  
R
+R CA(t)  
q
q
JC  
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:  
a. 70oC/W when mounted on a 1 in2 pad of 2oz copper.  
b. 125oC/W when mounted on a 0.026 in2 pad of 2oz copper.  
c. 135oC/W when mounted on a 0.005 in2 pad of 2oz copper.  
1c  
1a  
1b  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.  
NDH834P Rev.C  
Typical Electrical Characteristics  
2.5  
2
-20  
VGS = -4.5V  
-2.7  
-2.5  
-3.5  
-3.0  
V
GS = -2.0 V  
-15  
-10  
-5  
-2.0  
-2.5  
1.5  
1
-2.7  
-3.0  
-3.5  
-4.5  
-1.5  
0
0.5  
0
-1  
-2  
-3  
0
-5  
-10  
, DRAIN CURRENT (A)  
-15  
-20  
V
, DRAIN-SOURCE VOLTAGE (V)  
I
DS  
D
Figure 2. On-Resistance Variation with Gate  
Voltage and Drain Current.  
Figure 1. On-Region Characteristics.  
1.6  
2
VGS = -4.5V  
ID = -5.6A  
1.4  
V GS = -4.5V  
T = 125°C  
J
1.5  
1
1.2  
1
25°C  
-55°C  
0.5  
0
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-5  
-10  
, DRAIN CURRENT (A)  
-15  
-20  
T
, JUNCTION TEMPERATURE (°C)  
J
I
D
Figure 3. On-Resistance Variation with  
Temperature.  
Figure 4. On-Resistance Variation with Drain  
Current and Temperature.  
-15  
1.3  
1.2  
VDS = -5V  
T
=-55°C  
VDS = V  
GS  
J
25°C  
125°C  
I D = -250µA  
-12  
-9  
-6  
-3  
0
1.1  
1
0.9  
0.8  
0.7  
0.6  
0.5  
-50  
-25  
0
T
25  
50  
75  
100  
125  
150  
-0.5  
-1  
-1.5  
-2  
-2.5  
, JUNCTION TEMPERATURE (°C)  
V
, GATE TO SOURCE VOLTAGE (V)  
J
GS  
Figure 6. Gate Threshold Variation with  
Temperature.  
Figure 5. Transfer Characteristics.  
NDH834P Rev.C  
Typical Electrical Characteristics  
15  
5
1.1  
VGS = 0V  
1.08  
1.06  
1.04  
1.02  
1
I
= -250µA  
D
T
= 125°C  
J
1
0.1  
25°C  
-55°C  
0.01  
0.98  
0.96  
0.94  
0.92  
0.001  
0.0001  
-50  
-25  
0
T
25  
50  
75  
100  
125  
150  
0
0.2  
-V  
0.4  
0.6  
0.8  
1
1.2  
, JUNCTION TEMPERATURE (°C)  
, BODY DIODE FORWARD VOLTAGE (V)  
J
SD  
Figure 8. Body Diode Forward Voltage  
Variation with Current and  
Temperature.  
Figure 7. Breakdown Voltage Variation  
with Temperature.  
5000  
5
I D = -5.6A  
3000  
2000  
VDS = -5V  
4
C
iss  
-10V  
-15V  
3
2
1
0
C
1000  
oss  
500  
C
rss  
f = 1 MHz  
300  
VGS = 0 V  
150  
0.1  
0.2  
0.5  
1
2
5
10  
20 30  
0
2
4
6
8
10  
-V  
, DRAIN TO SOURCE VOLTAGE (V)  
Q
, GATE CHARGE (nC)  
DS  
g
Figure 9. Capacitance Characteristics.  
Figure 10. Gate Charge Characteristics.  
-VDD  
ton  
toff  
td(off)  
t d(on)  
tr  
tf  
RL  
VIN  
90%  
90%  
D
VOUT  
V
OUT  
VGS  
10%  
10%  
90%  
RGEN  
DUT  
G
V
50%  
50%  
IN  
S
10%  
INVERTED  
PULSE WIDTH  
Figure 11. Switching Test Circuit.  
Figure 12. Switching Waveforms.  
NDH834P Rev.C  
Typical Thermal Characteristics  
2.5  
2
40  
VDS = - 5V  
32  
24  
16  
8
T = -55°C  
J
1a  
25°C  
1.5  
1
125°C  
1b  
1c  
0.5  
0
4.5"x5" FR-4 Board  
TA  
25 o  
Still Air  
=
C
0
0
-4  
-8  
-12  
-16  
-20  
0
0.2  
0.4  
0.6  
0.8  
1
2
2oz COPPER MOUNTING PAD AREA (in  
)
I
, DRAIN CURRENT (A)  
D
Figure 13. Transconductance Variation with Drain  
Current and Temperature.  
Figure 14. SOT-8 Maximum Steady-State Power  
Dissipation versus Copper Mounting Pad  
Area.  
30  
6
10  
5
1a  
5
4
3
2
2
1
1b  
1c  
0.5  
VGS = -4.5V  
0.1  
4.5"x5" FR-4 Board  
TA  
25 o  
Still Air  
VGS  
SINGLE PULSE  
=
C
R
JA = See Note 1c  
0.05  
q
T A = 25°C  
=
-4.5V  
0.01  
0.1  
0.2  
0.5  
- V  
1
2
5
10  
20  
40  
0
0.2  
0.4  
0.6  
0.8  
1
, DRAIN-SOURCE VOLTAGE (V)  
2
)
DS  
2oz COPPER MOUNTING PAD AREA (in  
Figure 15. Maximum Steady-State Drain  
Current versus Copper Mounting Pad  
Area.  
Figure 16. Maximum Safe Operating Area.  
1
D = 0.5  
0.2  
0.5  
R
(t) = r(t) * R  
JA  
q
0.3  
0.2  
JA  
q
R
= See Note 1c  
JA  
q
0.1  
0.1  
P(pk)  
0.05  
t
1
0.05  
t
2
0.02  
0.01  
Single Pulse  
0.03  
0.02  
T
- T  
= P * R  
(t)  
2
J
JA  
A
q
Duty Cycle, D = t / t  
1
0.01  
0.0001  
0.001  
0.01  
0.1  
, TIME (sec)  
1
10  
100  
300  
t
1
Figure 17. Transient Thermal Response Curve.  
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change  
depending on the circuit board design.  
NDH834P Rev.C  
NDH834P Rev.C  
NDH834P Rev.C  

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