NDP4050 [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | NDP4050 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 1996
NDP4050 / NDB4050
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
15A, 50V. RDS(ON) = 0.10W @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
____________________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP4050
NDB4050
Units
V
VDSS
VDGR
Drain-Source Voltage
50
50
V
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
± 20
± 40
V
VGSS
- Nonrepetitive (tP < 50 µs)
Drain Current - Continuous
ID
± 15
A
- Pulsed
± 45
PD
Total Power Dissipation
50
W
W/°C
°C
Derate above 25°C
0.33
TJ,TSTG
TL
Operating and Storage Temperature Range
-65 to 175
275
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
°C
NDP4050 Rev. B
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS
IAR
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 15 A
40
15
mJ
A
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
50
V
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = 50 V, VGS = 0 V
Zero Gate Voltage Drain Current
250
1
µA
mA
nA
nA
TJ= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
2
3
4
3.6
V
VGS(th)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 7.5 A
1.4
2.4
TJ= 125°C
TJ= 125°C
RDS(ON)
Static Drain-Source On-Resistance
0.078
0.12
0.1
W
0.165
On-State Drain Current
15
3
A
S
ID(on)
gFS
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 7.5 A
Forward Transconductance
5.7
DYNAMIC CHARACTERISTICS
Input Capacitance
370
165
50
450
200
100
pF
pF
pF
Ciss
Coss
Crss
VDS = 25, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = 30 V, ID = 15 A
VGS = 10 V, RGEN = 25 W
8
70
18
37
12.7
3.2
7
20
100
30
ns
ns
ns
50
ns
Qg
Qgs
Qgd
VDS = 48 V
ID = 15 A, VGS = 10 V
17
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
NDP4050 Rev. B
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max
Units
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
15
45
A
A
V
ISM
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 7.5 A (Note 1)
0.95
0.88
46
1.3
1.2
100
TJ= 125°C
Reverse Recovery Time
VGS = 0 V, IF = 15 A,
dIF/dt = 100 A/µs
25
ns
A
trr
Irr
Reverse Recovery Current
1.5
3.4
7
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
3
°C/W
°C/W
R
JC
q
62.5
R
JA
q
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP4050 Rev. B
Typical Electrical Characteristics
30
2
1.8
1.6
1.4
1.2
1
VGS = 20V
VGS = 6.0V
12
10
9.0
25
20
15
10
5
7.0
8.0
8.0
9.0
7.0
10
6.0
12
20
0.8
0.6
5.0
0
0
5
10
15
20
25
30
0
1
2
3
4
5
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 1. On-Region Characteristics.
2.2
3
ID = 7.5 A
VGS = 10 V
2
VGS = 10 V
2.5
2
1.8
1.6
1.4
1.2
1
T
= 125°C
J
1.5
1
25°C
-55°C
0.8
0.6
0.5
-50
-25
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
I
, DRAIN CURRENT (A)
T
, JUNCTION TEMPERATURE (°C)
J
D
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
20
15
10
5
1.2
T
= -55°C
VDS = 10V
25°C
J
125°C
VDS = VGS
1.1
1
ID = 250µA
0.9
0.8
0.7
0.6
0
2
4
6
8
10
-50
-25
0
25
T , JUNCTION TEMPERATURE (°C)
J
50
75
100
125
150
175
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 6. Gate Threshold Variation with
Temperature.
Figure 5. Drain Current Variation with Gate
Voltage and Temperature.
NDP4050 Rev. B
Typical Electrical Characteristics (continued)
20
10
5
1.15
VGS = 0V
I D = 250µA
1.1
1.05
1
T
= 125°C
J
25°C
2
1
-55°C
0.5
0.95
0.9
0.2
0.1
0.4
0.6
V
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
175
, BODY DIODE FORWARD VOLTAGE (V)
T
, JUNCTION TEMPERATURE (°C)
SD
J
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
700
500
20
ID = 15A
C
iss
VDS = 12V
15
24V
300
200
48V
C
oss
10
5
100
f = 1 MHz
VGS = 0V
50
30
C
rss
0
1
2
3
5
10
20
30
60
0
5
10
, GATE CHARGE (nC)
15
20
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
DS
g
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
INVERTED
DUT
G
V
50%
50%
IN
S
10%
PULSE WIDTH
Figure 12. Switching Waveforms.
Figure 11. Switching Test Circuit.
NDP4050 Rev. B
Typical Electrical Characteristics (continued)
8
70
50
T
= -55°C
J
VDS = 15V
25°C
6
4
2
0
20
10
125°C
VGS = 20V
2
1
SINGLE PULSE
R
JC = 3 o C/W
q
TC = 25°C
0.5
0
2
4
6
8
10
1
2
5
10
30
50
70
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 13. Transconductance Variation with
Figure 14. Maximum Safe Operating Area.
Drain Current and Temperature.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 3.0 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
t1
t2
0.03
T
- T = P * R
(t)
0.01
J
C
q
JC
0.02
Duty Cycle, D = t1 /t2
Single Pulse
0.05
0.01
0.01
0.1
0.5
1
5
10
50
100
500
1000
t1 , TIME (ms)
Figure 15. Transient Thermal Response Curve.
NDP4050 Rev. B
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