NDP410A [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | NDP410A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 1994
NDP410A / NDP410AE / NDP410B / NDP410BE
NDB410A / NDB410AE / NDB410B / NDB410BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
9 and 8A, 100V. RDS(ON) = 0.25 and 0.30W.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON)
.
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
NDP410A NDP410AE
NDB410A NDB410AE
NDP410B NDP410BE
NDB410B NDB410BE
Symbol Parameter
Units
V
VDSS
VDGR
VGSS
Drain-Source Voltage
100
100
±20
±40
V
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
V
V
- Nonrepetitive (tP < 50 ms)
Drain Current - Continuous
- Pulsed
ID
9
8
A
36
32
A
PD
50
W
Total Power Dissipation @ TC = 25°C
Derate above 25°C
0.33
W/°C
°C
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
275
TL
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
°C
© 1997 Fairchild Semiconductor Corporation
NDP410.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Type
Min Typ
Max Units
EAS
Single Pulse Drain-Source
Avalanche Energy
VDD = 25 V, ID = 9 A
NDP410AE
NDP410BE
NDB410AE
NDB410BE
50
9
mJ
A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
ALL
ALL
100
V
Voltage
IDSS
Zero Gate Voltage Drain
Current
VDS = 100 V,
VGS = 0 V
250
1
µA
mA
nA
TJ = 125°C
TJ = 125°C
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2)
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V
ALL
ALL
100
-100
Gate - Body Leakage, Reverse
nA
VGS = -20 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
ALL
2
2.9
2.3
0.2
4
V
V
VDS = VGS,
ID = 250 µA
1.4
3.6
RDS(ON)
Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 4.5 A
NDP410A
NDP410AE
NDB410A
0.25
W
0.38
0.5
0.3
TJ = 125°C NDB410AE
W
W
VGS = 10 V,
ID = 4 A
NDP410B
NDP410BE
NDB410B
TJ = 125°C NDB410BE
0.6
W
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
NDP410A
NDP410AE
NDB410A
NDB410AE
9
8
3
A
NDP410B
NDP410BE
NDB410B
NDB410BE
A
S
gFS
Forward Transconductance
VDS = 10 V, ID = 4.5 A
ALL
4.8
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
ALL
ALL
ALL
385
80
500
100
30
pF
pF
pF
C
iss
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
20
NDP410.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions
SWITCHING CHARACTERISTICS (Note 2)
Type
Min Typ
Max Units
tD(ON)
Turn - On Delay Time
Turn - On Rise Time
VDD = 50 V, ID = 9 A,
VGS = 10 V, RGEN = 24 W
ALL
ALL
7.5
29
20
50
nS
nS
tr
tD(OFF)
Turn - Off Delay Time
Turn - Off Fall Time
ALL
ALL
26
24
45
45
nS
nS
tf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 80 V,
ID = 9 A, VGS = 10V
ALL
ALL
ALL
11.6
2.3
5
17
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward VGS = 0 V,
NDP410A
NDP410AE
NDB410A
NDB410AE
9
8
A
A
A
A
NDP410B
NDP410BE
NDB410B
NDB410BE
ISM
NDP410A
NDP410AE
NDB410A
NDB410AE
36
32
NDP410B
NDP410BE
NDB410B
NDB410BE
VSD
(Note 2)
ALL
0.87
0.75
85
1.3
1.2
V
V
Voltage
IS = 4.5 A
TJ = 125°C
Reverse Recovery Time
Reverse Recovery Current
VGS = 0 V, IS = 9 A,
dIS/dt = 100 A/µs
ALL
ALL
120
ns
trr
Irr
6
9
A
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ALL
ALL
3
°C/W
°C/W
RqJC
62.5
RqJA
Notes:
1. NDP410A/410B and NDB410A/410B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
NDP410.SAM
Typical Electrical Characteristics
2
1.8
1.6
1.4
1.2
1
16
V GS= 20V
12
10
VGS = 5V
8.0
7.0
6.0
12
8
7.0
8.0
10
12
20
6.0
5.0
4
0
0.8
0
2
4
6
8
0
4
8
12
16
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.8
2.4
2
2.5
2
V
= 10V
ID = 4.5A
GS
T
= 125°C
V GS = 10V
J
1.5
1
1.6
1.2
0.8
0.4
25°C
-55°C
0.5
0
-50
-25
0
25
50
75
100
125
150
175
0
4
8
12
16
T
, JUNCTION TEMPERATURE (°C)
J
I
, DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
1.2
10
8
T
= -55°C
VDS= V
25
V DS = 10V
GS
125
J
I D = 250µA
1.1
1
6
0.9
0.8
0.7
0.6
4
2
0
-50
-25
0
25
50
75
100
125
150
175
2
3
4
5
6
7
8
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDP410.SAM
Typical Electrical Characteristics (continued)
1.06
15
10
VGS = 0V
I D = 250µA
1.04
1.02
1
T
= 125°C
J
25°C
1
-55°C
0.1
0.98
0.96
-50
0.01
-25
0
25
50
75
100
125
150
175
0.2
0.4
V
0.6
0.8
1
1.2
1.4
T
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
20
1000
500
ID = 9A
VDS = 20V
50
C
iss
80
15
10
5
200
100
50
C
oss
C
rss
f = 1 MHz
VGS = 0V
20
10
0
0
5
10
15
20
0.1
0.2
0.5
1
2
5
10
20
50
Q
, GATE CHARGE (nC)
V
, DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
r
t
tf
t d(on)
90%
90%
RL
VIN
D
VOUT
Output, V
Input, V
out
10%
90%
10%
VGS
Inverted
RGEN
DUT
G
50%
in
50%
10%
S
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP410.SAM
Typical Electrical Characteristics (continued)
8
VDS = 10V
L
VGS = 10V
+
T
= -55°C
25°C
J
tp
VDD
6
4
2
0
-
tp is adjusted to reach
the desired peak inductive
125°C
current, I L .
tp
BVDSS
I L
VDD
0
2
4
6
8
10
I
, DRAIN CURRENT (A)
D
Figure 13. Transconductance Variation
Figure 14. Unclamped Inductive Load
Circuit and Waveforms.
with Drain Current and Temperature.
50
10
5
VGS = 20V
SINGLE PULSE
TC = 25°C
2
1
0.5
1
2
3
5
10
20
50
100 150
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 15. Maximum Safe Operating Area.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 3.0 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.02
0.01
0.05
t1
t 2
0.03
0.02
T
- T = P * R
(t)
Single Pulse
0.02
J
C
q
JC
Duty Cycle, D = t1 /t2
0.01
0.01
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
t1 ,TIME (ms)
Figure 16. Transient Thermal Response Curve.
NDP410.SAM
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