NDP5060L [FAIRCHILD]

N-Channel Logic Level Enhancement Mode Field Effect Transistor; N沟道逻辑电平增强模式场效应晶体管
NDP5060L
型号: NDP5060L
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

N-Channel Logic Level Enhancement Mode Field Effect Transistor
N沟道逻辑电平增强模式场效应晶体管

晶体 晶体管 场效应晶体管
文件: 总12页 (文件大小:359K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
October 1996  
NDP5060L / NDB5060L  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
26 A, 60 V. RDS(ON) = 0.05 W @ VGS= 5 V  
RDS(ON) = 0.035 W @ VGS= 10 V.  
These logic level N-Channel enhancement mode power  
field effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This  
very high density process has been especially tailored  
to minimize on-state resistance, provide superior  
switching performance, and withstand high energy  
pulses in the avalanche and commutation modes.  
These devices are particularly suited for low voltage  
applications such as automotive, DC/DC converters,  
PWM motor controls, and other battery powered  
circuits where fast switching, low in-line power loss,  
and resistance to transients are needed.  
Critical DC electrical parameters specified at elevated  
temperature.  
Rugged internal source-drain diode can eliminate the need  
for an external Zener diode transient suppressor.  
175°C maximum junction temperature rating.  
High density cell design for extremely low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both through hole  
and surface mount applications.  
________________________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
Symbol Parameter  
TC = 25°C unless otherwise noted  
NDP5060L  
NDB5060L  
Units  
V
Drain-Source Voltage  
60  
60  
VDSS  
VDGR  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
±16  
±25  
V
VGSS  
- Nonrepetitive (tP < 50 µs)  
Drain Current - Continuous  
ID  
26  
A
- Pulsed  
78  
PD  
Total Power Dissipation @ TC = 25°C  
68  
W
W/°C  
°C  
Derate above 25°C  
Operating and Storage Temperature Range  
0.45  
-65 to 175  
TJ,TSTG  
© 1997 Fairchild Semiconductor Corporation  
NDP5060L Rev.A  
Electrical Characteristics (TC = 25°C unless otherwise noted)  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Units  
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)  
WDSS  
Single Pulse Drain-Source Avalanche  
Energy  
VDD = 30 V, ID = 26 A  
100  
26  
mJ  
A
Maximum Drain-Source Avalanche Current  
IAR  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
60  
V
BVDSS  
IDSS  
VGS = 0 V, ID = 250 µA  
VDS = 60 V, VGS = 0 V  
Zero Gate Voltage Drain Current  
250  
1
µA  
mA  
nA  
nA  
TJ = 125°C  
Gate - Body Leakage, Forward  
Gate - Body Leakage, Reverse  
100  
-100  
IGSSF  
IGSSR  
VGS = 16 V, VDS = 0 V  
VGS = -16 V, VDS = 0 V  
ON CHARACTERISTICS (Note 1)  
Gate Threshold Voltage  
1
1.4  
1
2
V
VGS(th)  
VDS = VGS, ID = 250 µA  
VGS = 5 V, ID = 13 A  
0.65  
1.5  
TJ = 125°C  
TJ = 125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
0.042  
0.07  
0.031  
0.05  
0.08  
0.035  
W
VGS = 10 V, ID = 13 A  
VGS = 5 V, VDS = 10 V  
VDS = 10 V, ID = 13 A  
ID(on)  
gFS  
On-State Drain Current  
26  
A
S
Forward Transconductance  
16  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
Ciss  
840  
230  
75  
pF  
pF  
pF  
VDS = 30 V, VGS = 0 V,  
f = 1.0 MHz  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS (Note 1)  
Turn - On Delay Time  
Turn - On Rise Time  
13  
20  
nS  
nS  
tD(on)  
VDD = 30 V, ID = 26 A,  
VGS = 5 V, RGEN = 30 W  
RGS = 30 W  
200  
400  
tr  
Turn - Off Delay Time  
Turn - Off Fall Time  
45  
80  
nS  
nS  
tD(off)  
102  
200  
tf  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
17  
4
24  
nC  
nC  
nC  
Qg  
Qgs  
Qgd  
VDS = 24 V,  
ID = 26 A, VGS = 5 V  
10  
NDP5060L Rev.A  
Electrical Characteristics (TC = 25°C unless otherwise noted)  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Units  
DRAIN-SOURCE DIODE CHARACTERISTICS  
IS  
Maximum Continuos Drain-Source Diode Forward Current  
Maximum Pulsed Drain-Source Diode Forward Current  
26  
78  
A
A
ISM  
VSD  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
VGS = 0 V, IS = 13 A (Note 1)  
0.9  
54  
1.3  
120  
V
ns  
VGS = 0 V, IF = 26 A,  
dIF/dt = 100 A/µs  
trr  
Irr  
Reverse Recovery Current  
2.1  
8
A
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Case  
2.2  
°C/W  
°C/W  
R
JC  
q
Thermal Resistance, Junction-to-Ambient  
62.5  
R
JA  
q
Note:  
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.  
NDP5060L Rev.A  
Typical Electrical Characteristics  
50  
2
1.8  
1.6  
1.4  
1.2  
1
VGS = 10V  
6.0  
VGS = 3.0 V  
5.0  
40  
4.5  
3.5  
4.0  
30  
4.0  
4.5  
5.0  
3.5  
20  
10  
0
6.0  
3.0  
10  
0.8  
0.6  
2.5  
0
1
2
3
4
5
0
10  
20  
30  
40  
50  
V
, DRAIN-SOURCE VOLTAGE (V)  
I
, DRAIN CURRENT (A)  
DS  
D
Figure 2. On-Resistance Variation with Gate  
Voltage and Drain Current.  
Figure 1. On-Region Characteristics.  
2
2
VGS = 5 V  
ID = 13A  
T
= 125°C  
J
1.75  
VGS = 5V  
1.5  
1
1.5  
1.25  
1
25°C  
-55°C  
0.5  
0
0.75  
0.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
T
, JUNCTION TEMPERATURE (°C)  
J
I
D
, DRAIN CURRENT (A)  
Figure 3. On-Resistance Variation  
Figure 4. On-Resistance Variation with Drain  
with Temperature.  
Current and Temperature.  
1.3  
1.2  
1.1  
1
20  
16  
12  
8
T
= -55°C  
VDS = 5V  
J
VDS = VGS  
25°C  
125°C  
ID = 250µA  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
1
2
3
4
5
T
, JUNCTION TEMPERATURE (°C)  
V
, GATE TO SOURCE VOLTAGE (V)  
J
GS  
Figure 6. Gate Threshold Variation with  
Figure 5. Transfer Characteristics.  
Temperature.  
NDP5060L Rev.A  
Typical Electrical Characteristics (continued)  
20  
10  
5
1.15  
I D = 250µA  
VGS = 0V  
1.1  
T
= 125°C  
J
1
0.1  
1.05  
25°C  
1
0.95  
0.9  
0.01  
-55°C  
0.001  
0.0001  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
T
, JUNCTION TEMPERATURE (°C)  
J
V
, BODY DIODE FORWARD VOLTAGE (V)  
SD  
Figure 7. Breakdown Voltage Variation with  
Figure 8. Body Diode Forward Voltage  
Temperature.  
Variation with Current and Temperature.  
10  
8
1500  
1000  
VDS = 12V  
I D = 26A  
24V  
C
iss  
48V  
500  
200  
6
C
oss  
4
f = 1 MHz  
VGS = 0V  
2
100  
50  
C
rss  
0
0
10  
20  
30  
40  
1
2
3
5
10  
20  
30  
50  
Q
, GATE CHARGE (nC)  
g
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
Figure 9. Capacitance Characteristics.  
Figure 10. Gate Charge Characteristics.  
ton  
toff  
VDD  
td(off)  
t d(on)  
tf  
tr  
RL  
90%  
VIN  
90%  
D
VOUT  
VOUT  
10%  
VGEN  
10%  
90%  
INVERTED  
RGEN  
DUT  
G
VIN  
50%  
50%  
RGS  
S
10%  
PULSE WIDTH  
Figure 11. Switching Test Circuit.  
Figure 12. Switching Waveforms.  
NDP5060L Rev.A  
Typical Electrical Characteristics (continued)  
100  
60  
25  
VDS = 5V  
T
= -55°C  
J
20  
15  
10  
5
30  
25°C  
10  
5
125°C  
VGS = 5V  
SINGLE PULSE  
2
1
R
JC =2.2o C/W  
q
TC = 25°C  
0.5  
0
1
3
5
10  
20  
40  
60 80  
0
5
10  
15  
20  
25  
V
, DRAIN-SOURCE VOLTAGE (V))  
I
, DRAIN CURRENT (A)  
DS  
D
Figure 13. Transconductance Variation with Drain  
Figure 14. Maximum Safe Operating Area.  
Current and Temperature.  
1
D = 0.5  
0.5  
R
(t) = r(t) * R  
q
q
JC  
JC  
0.3  
R
=2.2 °C/W  
q
JC  
0.2  
0.2  
P(pk)  
0.1  
0.05  
0.1  
t1  
t2  
0.02  
0.01  
T
- T = P * R  
t)  
JC  
q
J
C
0.05  
Single Pulse  
Duty Cycle, D = t 1/t  
2
0.03  
0.1  
0.5  
1
10  
100  
1000  
3000  
10000  
t
,TIME (ms)  
1
Figure 15. Transient Thermal Response Curve.  
NDP5060L Rev.A  
TO-220 Tape and Reel Data and Package Dimensions  
TO-220 Tube Packing  
Configuration: Figur e 1.0  
Packaging Description:  
TO-220 parts are shipped normally in tube. The tube is  
made of PVC plastic treated with anti-static agent.These  
tubes in standard option are placed inside  
plastic bag, barcode labeled, and placed inside  
a
dissipative  
box  
a
45 units per Tube  
made of recyclable corrugated paper. One box contains  
two bags maximum (see fig. 1.0). And one or several of  
these boxes are placed inside  
a labeled shipping box  
whic h comes in different sizes dependi ng on the number  
of parts shipped. The other option comes in bulk as  
described in the Packaging Information table. The units in  
this option are placed inside  
static bubble sheet. These smaller boxes are individually  
labeled and placed inside larger box (see fig. 3.0).  
These larger or intermediate boxes then will be placed  
finally inside a labeled shipping box which still comes in  
different sizes depending on the number of units shipped.  
a small box laid with anti-  
a
12 Tubes per Bag  
530mm x 130mm x 83mm  
Intermediate box  
2 bags per Box  
Conduct ive Plastic Bag  
TO-220 Packaging  
Information: Figure 2.0  
FSCINT Label sample  
FAIRCHILD SEMICONDUCTOR CORPORATION  
HTB:B  
QTY:  
1080  
LOT:  
CBVK741B019  
1080 units maximum  
quantity per box  
TO-220 Packaging Information  
NSID:  
D/C1:  
SPEC:  
FDP7060  
Standard  
(no flow code)  
Packaging Option  
S62Z  
SPEC REV:  
QA REV:  
D9842  
B2  
Packaging type  
Rail/Tube  
BULK  
300  
Qty per Tube/Box  
Box Dimension (mm)  
Max qty per Box  
45  
FSCINT Label  
(FSCINT)  
530x130x83 114x102x51  
1,080  
1,500  
Weight per unit (gm)  
1.4378  
1.4378  
Note/Comments  
TO-220 bulk Packing  
Configuration: Figure 3.0  
Anti-static  
530mm x 130mm x 83mm  
Intermediate box  
Bubbl e Sheets  
FSCINT Label  
1500 units maximum  
quantity per intermediate box  
300 units per  
EO70 box  
5 EO70 boxes per per  
Intermediate Box  
114mm x 102mm x 51mm  
EO70 Immediate Box  
FSCINT Label  
TO-220 Tube  
Configuration: Figure 4.0  
0.123  
+0.001  
-0.003  
0.165  
0.080  
Note: All dim ensions are in inches  
0.275  
0.450  
±.030  
9852  
9852  
9852  
9852  
9852  
9852  
9852 9852 9852 9852 9852  
F F F F F  
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L  
9852  
F
F
F
F
F
F
F
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L  
1.300  
±.015  
0.160  
0.032  
±.003  
20.000  
+0.031  
-0.065  
0.800  
0.275  
August 1999, Rev. B  
TO-220 Tape and Reel Data and Package Dimensions, continued  
TO-220 (FS PKG Code 37)  
1:1  
Scale 1:1 on letter size paper  
Dimensions shown below are in:  
inches [millimeters]  
Part Weight per unit (gram): 1.4378  
September 1998, Rev. A  
TO-263AB/D2PAK Tape and Reel Data and Package  
Dimensions  
TO-263AB/D2PAK Packaging  
Configuration: Figure 1.0  
Packaging Description:  
TO-263/D2PAK parts are shipped in tape. The carrier tape  
ELECTROSTATIC  
SENSITIVE DEVICES  
DO NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC  
ELECTRO  
is made from  
a dissipative (carbon filled) polycarbonate  
M
AGN ETI C, M AG NETIC O R R ADIO ACTIVE FI ELD S  
TNR DATE  
PT NUMB E  
resin. The cover tape is a multilayer film (Heat Activated  
Adhesive in nature) primarily composed of polyester film,  
adhesive layer, sealant, and anti-static sprayed agent.  
These reeled parts in standard option are shipped with  
800 units per 13" or 330cm diameter reel. The reels are  
dark blue in color and is made of polystyrene plastic (anti-  
static coated). This and some other options are further  
described in the Packaging Information table.  
R
PEEL STRENGTH MIN ______________gms  
MAX _____________gms  
Antistatic Cover Tape  
ESD Label  
These full reels are individually barcode labeled, dry  
packed, and placed inside  
a standard intermediate box  
(illustrated in figure 1.0) made of recyclable corrugated  
brown paper. One box contains one reel maximum. And  
these boxes are placed inside a barcode labeled shipping  
box which comes in different sizes depending on the  
number of parts shipped.  
Static Dissipative  
Embossed Carrier Tape  
Moisture Sensitive  
Label  
F63TNR  
Label  
Customized  
Label  
A 3 L 0 B 6 D F  
3 5 9 F 8  
A 3 L 0 B 6 D F  
3 5 9 F 8  
A 3 L 0 B 6 D F  
3 5 9 F 8  
A 3 L 0 B 6 D F  
3 5 9 F 8  
TO-263AB/D2PAK Packaging Information  
Standard  
(no flow code)  
L86Z  
Packaging Option  
TO-263AB/D2PAK Unit Orientation  
Packaging type  
TNR  
800  
Rail/Tube  
Qty per Reel/Tube/Bag  
Reel Size  
45  
-
13" Dia  
Box Dimension (mm)  
Max qty per Box  
Weight per unit (gm)  
Weight per Reel  
359x359x57 530x130x83  
800  
1,080  
1.4378  
-
359mm x 359mm x 57mm  
Standard Intermediate box  
1.4378  
1.6050  
ESD Label  
Note/Comments  
Moisture Sensitive  
Label  
F63TNR Label sample  
F63TNR Label  
LOT: CBVK741B019  
QTY: 800  
SPEC:  
FSID: FDB6320L  
DRYPACK Bag  
D/C1: D9842  
D/C2:  
QTY1:  
QTY2:  
SPEC REV:  
CPN:  
N/F: F  
(F63TNR)3  
TO-263AB/D2PAK Tape Leader and Trailer  
Configuration: Figure 2.0  
Carrier Tape  
Cover Tape  
Components  
Trailer Tape  
Leader Tape  
400mm minimum or  
25 empty pockets  
1520mm minimum or  
95 empty pockets  
September 1999, Rev. B  
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued  
TO-263AB/D2PAK Embossed Carrier Tape  
Configuration: Figure 3.0  
P0  
D0  
T
E1  
E2  
F
W
K0  
Wc  
B0  
Tc  
A0  
D1  
P1  
User Direction of Feed  
Dimensions are in millimeter  
A0  
B0  
W
D0  
D1  
E1  
E2  
F
P1  
P0  
K0  
T
Wc  
Tc  
Pkg type  
TO263AB/  
D2PAK  
(24mm)  
10.60  
+/-0.10  
15.80  
+/-0.10  
24.0  
+/-0.3  
1.55  
+/-0.05  
1.60  
+/-0.10  
1.75  
+/-0.10  
22.25  
min  
11.50  
+/-0.10  
16.0  
+/-0.1  
4.0  
+/-0.1  
4.90  
+/-0.10  
0.450  
+/-0.150  
21.0  
+/-0.3  
0.06  
+/-0.02  
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481  
rotational and lateral movement requirements (see sketches A, B, and C).  
0.9mm  
maximum  
10 deg maximum  
Typical  
component  
cavity  
center line  
0.9mm  
maximum  
B0  
10 deg maximum component rotation  
Typical  
component  
center line  
Sketch A (Side or Front Sectional View)  
Component Rotation  
Sketch C (Top View)  
Component lateral movement  
A0  
Sketch B (Top View)  
Component Rotation  
TO-263AB/D2PAK Reel Configuration:  
Figure 4.0  
W1 Measured at Hub  
Dim A  
Max  
B Min  
Dim C  
Dim A  
max  
Dim D  
min  
Dim N  
DETAIL AA  
See detail AA  
W3  
13" Diameter Option  
W2 max Measured at Hub  
Dimensions are in inches and millimeters  
Reel  
Option  
Tape Size  
Dim A  
Dim B  
Dim C  
Dim D  
Dim N  
Dim W1  
Dim W2  
Dim W3 (LSL-USL)  
13.00  
330  
0.059  
1.5  
512 +0.020/-0.008  
13 +0.5/-0.2  
0.795  
20.2  
4.00  
100  
0.961 +0.078/-0.000  
24.4 +2/0  
1.197  
30.4  
0.941 – 0.1.079  
23.9 – 27.4  
24mm  
13" Dia  
August 1999, Rev. B  
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued  
TO-263AB/D2PAK (FS PKG Code 45)  
1:1  
Scale 1:1 on letter size paper  
Dimensions shown below are in:  
inches [millimeters]  
Part Weight per unit (gram): 1.4378  
August 1998, Rev. A  
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FACT™  
FACT Quiet Series™  
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FAST®  
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FASTr™  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. D  

相关型号:

NDP5060LJ69Z

Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD

NDP5060S62Z

Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD

NDP506A

26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
TI

NDP506AE

26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
TI

NDP506AL

TRANSISTOR 26 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power
NSC

NDP506AL

26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
TI

NDP506AL/J69Z

26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
TI

NDP506B

TRANSISTOR 24 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power
NSC

NDP506B

24A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
TI

NDP506B/J69Z

24A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
TI

NDP506BE

TRANSISTOR 24 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power
NSC

NDP506BE

24A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
TI