NDP7052 [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | NDP7052 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 1997
NDP7052 / NDB7052
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
75 A, 50 V. RDS(ON) = 0.01 W @ VGS= 10 V.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
NDP7052
NDB7052
Units
V
VDSS
VDGR
Drain-Source Voltage
50
50
V
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
±20
±40
V
VGSS
- Nonrepetitive (tP < 50 µs)
Drain Current - Continuous
- Pulsed
ID
75
A
225
150
W
W/°C
°C
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
1
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
THERMAL CHARACTERISTICS
RqJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
°C/W
°C/W
Rq JA
62.5
© 1997 Fairchild Semiconductor Corporation
NDP7052 Rev.B1
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note)
WDSS
IAR
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
VDD = 25 V, ID = 75 A
550
75
mJ
A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
50
V
ID = 250 µA, Referenced to 25 o C
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
57
DBVDSS/DTJ
IDSS
10
1
µA
mA
nA
nA
VDS = 40 V, VGS = 0 V
TJ = 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (Note)
ID = 250 µA, Referenced to 25 o C
mV/oC
V
Gate Threshold VoltageTemp. Coefficient
-5.2
DVGS(th)/DTJ
Gate Threshold Voltage
2
2.2
1.55
0.008
3
VGS(th)
VDS = VGS, ID = 250 µA
TJ = 125°C
1.4
2.4
Static Drain-Source On-Resistance
0.01
RDS(ON)
VGS = 10 V, ID = 37.5 A
TJ = 125°C
W
0.011 0.018
52
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS= 10 V
VDS = 10 V, ID = 37.5 A
60
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
3400
1300
460
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note)
Turn - On Delay Time
Turn - On Rise Time
15
30
nS
nS
tD(on)
VDD = 30 V, ID = 75 A,
VGS = 10 V, RGEN = 5 W
147
250
tr
Turn - Off Delay Time
Turn - Off Fall Time
85
150
300
nS
nS
tD(off)
165
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
117
12
160
nC
nC
nC
Qg
VDS = 24 V,
ID = 37.5 A, VGS = 10 V
Qgs
Qgd
46
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
75
225
1.3
150
10
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 13 A (Note)
VGS = 0 V, IF = 37.5 A,
dIF/dt = 100 A/µs
0.9
75
4
V
ns
A
Irr
Reverse Recovery Current
Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7052 Rev.B1
Typical Electrical Characteristics
100
2.5
2
V
= 10V
6.0
5.5
GS
7.0
V
=4.0V
GS
5.0
80
60
40
20
0
4.5
4.5
5.0
5.5
1.5
1
6.0
4.0
6.5
7.0
8.0
80
10.0
3.5
0.5
0
0.5
1
1.5
2
2.5
3
0
20
40
60
100
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.05
0.04
0.03
0.02
0.01
0
2
I
=37.5A
ID=37.5A
D
1.8
1.6
1.4
1.2
1
V
= 10V
GS
125°C
0.8
0.6
0.4
25°C
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On-Resistance Variation
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
with Temperature.
60
50
40
30
20
10
0
60
V
=0V
GS
V
= 10V
DS
10
5
T = 125°C
J
1
0.5
25°C
-55°C
0.1
0.01
T = -55°C
J
0.001
0.0001
25°C
125°C
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature.
Figure 5. Transfer Characteristics.
NDP7052 Rev.B1
Typical Electrical Characteristics (continued)
10
6000
ID = 37.5A
VDS = 12V
24V
C
iss
8
6
4
2
0
48V
2000
1000
500
C
oss
C
rss
f = 1 MHz
= 0V
V
GS
200
1
5
10
20
50
0
20
40
60
80
100
120
140
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
g
Figure 8.Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
2000
400
200
100
50
SINGLE PULSE
1500
1000
500
0
Rq
=1° C/W
JC
TC = 25°C
20
10
5
VGS = 10V
SINGLE PULSE
RqJC= 1oC/W
TC = 25 °C
2
1
0.5
0.5
0.1
0.3
1
3
10
30
100
300
1,000
1
3
5
10
20 30
80
SINGLE PULSE TIME (mS)
V
, DRAIN-SOURCE VOLTAGE (V))
DS
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
R
q
= 1°C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
t
1
t
2
0.03
0.01
T - T = P * R
JC
q
Duty Cycle, D = t /t
(t)
J
C
0.02
1
2
Single Pulse
0.01
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
t
,TIME (ms)
1
Figure 11. Transient Thermal Response Curve.
NDP7052 Rev.B1
NDP7052 Rev.B1
NDP7052 Rev.B1
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