NDS8858HL86Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8;
| 型号： | NDS8858HL86Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 1996
NDS8858H
Complementary MOSFET Half Bridge
General Description
Features
These Complementary MOSFET half bridge devices are
produced using Fairchild's proprietary, high cell density,
DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage half bridge
applications or CMOS applications when both gates are
connected together.
N-Channel 6.3A, 30V, RDS(ON)=0.035W @ VGS=10V.
P-Channel -4.8A, -30V, RDS(ON)=0.065W @ VGS=-10V.
High density cell design or extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Matched pair for equal input capacitance and power capability
.
________________________________________________________________________________
V+
Vout
Vout
P-Gate
Vout
Vout
N -Gate
V-
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
N-Channel
P-Channel
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
30
20
6.3
20
-30
-20
-4.8
20
V
V
A
VDSS
VGSS
ID
(Note 1a &2)
(Note 1a)
PD
Maximum Power Dissipation
(Single Device)
2.5
1.2
W
(Note 1b)
(Note 1c)
1
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
50
25
°C/W
°C/W
R
JA
q
(Single Device)
(Note 1a)
(Note 1a)
Thermal Resistance, Junction-to-Case
(Single Device)
R
JC
q
© 1997 Fairchild Semiconductor Corporation
NDS8858H Rev. C
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
Parameter
Conditions
Type Min
Typ
Max
Units
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
VDS = 24 V, VGS = 0 V
N-Ch
P-Ch
N-Ch
30
V
-30
V
IDSS
Zero Gate Voltage Drain Current
1
10
µA
µA
µA
µA
nA
nA
TJ = 55°C
TJ = 55°C
VDS = -24 V, VGS = 0 V
P-Ch
-1
-10
100
-100
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
All
All
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
N-Ch
P-Ch
N-Ch
1
0.7
-1
1.6
1.2
2.8
2.2
V
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
VGS = 10 V, ID = 4.8 A
TJ = 125°C
TJ = 125°C
TJ = 125°C
-1.6
-1.2
-2.8
-2.2
-0.7
Static Drain-Source On-Resistance
0.033 0.035
RDS(ON)
W
0.046
0.046
0.052
0.075
0.085
0.063
0.05
0.065
0.13
0.1
VGS = 4.5 V, ID = 3.7 A
VGS = -10 V, ID = -4.8 A
P-Ch
TJ = 125°C
VGS = -4.5 V, ID = -3.7 A
VGS = 10 V, VDS = 5 V
VGS = -10 V, VDS = -5 V
VDS = 10 V, ID = 4.8 A
VDS = -10 V, ID = -4.8 A
On-State Drain Current
N-Ch
P-Ch
N-Ch
P-Ch
20
A
S
ID(on)
-20
Forward Transconductance
10
7
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
N-Channel
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
720
690
370
430
250
160
pF
pF
pF
Ciss
Coss
Crss
Output Capacitance
P-Channel
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance
NDS8858H Rev. C
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type Min
Typ
Max
Units
ns
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
N-Channel
VDD = 10 V, ID = 1 A,
VGEN = 10 V, RGEN = 6 W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
12
9
20
20
30
25
50
50
20
40
30
30
13
20
29
40
10
19
19
21
2.1
3.2
5.2
5.2
ns
tr
P-Channel
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 W
ns
tD(off)
tf
ns
Qg
Qgs
Qgd
N-Channel
VDS = 10 V,
ID = 4.8 A, VGS = 10 V
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
P-Channel
VDS = -10 V,
ID = -4.8 A, VGS = -10 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
2
A
V
-2
Drain-Source Diode Forward Voltage
Reverse Recovery Time
0.9
1.2
-1.2
100
VSD
VGS = 0 V, IS = 2.0 A (Note 2)
VGS = 0 V, IS = -2.0 A (Note 2)
-0.85
N-Channel
ns
trr
VGS = 0 V, IF = 2.0 A, dIF/dt = 100 A/µs
P-Channel
P-Ch
100
VGS = 0 V, IF = -2.0 A, dIF/dt = 100 A/µs
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T
J- T
TJ- T
A
A
= I2 (t) ´ RDS (ON
( )
PD t =
=
)
T
J
D
R
(t)
A
R
+R
C qCA
t
( )
qJ
qJ
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 105oC/W when mounted on a 0.04 in2 pad of 2oz copper.
c. 125oC/W when mounted on a 0.006 in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS8858H Rev. C
Typical Electrical Characteristics
-20
-15
-10
-5
25
VGS = -10V
VGS =10V
6.0
5.0
-6.0
4.5
-5.0
20
4.0
-4.5
15
10
5
-4.0
3.5
-3.5
3.0
-3.0
0
0
0
0.5
1
1.5
2
2.5
3
0
-1
V
-2
-3
-4
V
, DRAIN-SOURCE VOLTAGE (V)
DS
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. N-Channel On-Region Characteristics.
Figure 2. P-Channel On-Region Characteristics.
3
3
VGS = -3.5V
VGS = 3.0V
2.5
2
2.5
2
3.5
- 4.0
-4.5
-5.0
4.0
4.5
5.0
6.0
10
1.5
1
1.5
1
-6.0
-10
0.5
0.5
0
5
10
15
20
25
0
-4
-8
-12
-16
-20
I
, DRAIN CURRENT (A)
D
I
, DRAIN CURRENT (A)
D
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
1.6
1.4
1.2
1
1.6
ID = -4.8A
ID = 4.8A
VGS =10V
V GS = -10V
1.4
1.2
1
0.8
0.6
0.8
0.6
-50
-50
-25
0
25
50
75
100
125
150
-25
0
T
25
50
75
100
125
150
T
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
J
J
Figure 6. P-Channel On-Resistance Variation
with Temperature.
Figure 5. N-Channel On-Resistance Variation
with Temperature.
NDS8858H Rev. C
Typical Electrical Characteristics
2
2
1.5
1
VGS = 10V
1.75
VGS = -10V
T
= 125°C
1.5
1.25
1
J
T
= 125°C
J
25°C
25°C
-55°C
0.75
0.5
-55°C
0.5
0
5
10
15
20
25
0
-4
-8
-12
-16
-20
I
, DRAIN CURRENT (A)
D
I
, DRAIN CURRENT (A)
D
Figure 8. P-Channel On-Resistance Variation
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
with Drain Current and Temperature.
-20
25
20
15
10
5
T
= -55°C
T
= -55°C
J
25°C
VDS = 10V
VDS = -10V
J
125°C
125°C
25°C
-15
-10
-5
0
0
-1
-2
-3
-4
-5
-6
1
2
3
4
5
6
V
, GATE TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
GS
GS
Figure 10. P-Channel Transfer
Characteristics.
Figure 9. N-Channel Transfer
Characteristics.
1.2
1.1
1
1.2
1.1
1
VDS = VGS
VDS= VGS
I D = 250µA
I D = -250µA
0.9
0.8
0.7
0.6
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
, JUNCTION TEMPERATURE (°C)
J
50
75
100
125
150
T
, JUNCTION TEMPERATURE (°C)
T
J
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDS8858H Rev. C
Typical Electrical Characteristics
1.1
1.08
1.06
1.04
1.02
1
1.1
ID = 250µA
I D = -250µA
1.05
1
0.95
0.9
0.98
0.96
0.94
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
, JUNCTION TEMPERATURE (°C)
J
T
, JUNCTION TEMPERATURE (°C)
J
Figure 14. P-Channel Breakdown Voltage
Variation with Temperature.
Figure 13. N-Channel Breakdown Voltage
Variation with Temperature.
2000
1500
2000
1000
1000
500
C
C
iss
iss
C
500
C
oss
oss
300
200
f = 1 MHz
VGS = 0V
200
100
f = 1 MHz
C
rss
C
rss
VGS = 0V
100
0.1
0.1
0.2
0.5
1
2
5
10
20 30
0.2
0.5
1
2
5
10
30
V
, DRAIN TO SOURCE VOLTAGE (V)
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
Figure 15. N-Channel Capacitance
Characteristics.
Figure 16. P-Channel Capacitance
Characteristics.
10
8
10
8
ID = 4.8A
VDS = 5V
ID = -4.8A
VDS= -5V
10V
20V
-20V
-10V
6
6
4
4
2
2
0
0
0
0
5
10
15
20
25
5
10
15
20
25
Q
, GATE CHARGE (nC)
g
Q
, GATE CHARGE (nC)
g
Figure 18. P-Channel Gate Charge Characteristics.
Figure 17. N-Channel Gate Charge Characteristics.
NDS8858H Rev. C
Typical Electrical and Thermal Characteristics
20
12
9
T
= -55°C
VDS = 10V
J
VDS = -10V
T
= -55°C
J
16
12
8
25°C
25°C
125°C
6
125°C
3
4
0
0
0
5
10
15
20
25
0
-4
-8
-12
-16
-20
I
, DRAIN CURRENT (A)
I
, DRAIN CURRENT (A)
D
D
Figure 19. N-Channel Transconductance Variation with
Drain Current and Temperature.
Figure 20. P-Channel Transconductance Variation
with Drain Current and Temperature.
20
20
10
VGS = 0V
10
VGS =0V
5
5
T
= 125°C
J
1
1
0.1
25°C
T
= 125°C
-55°C
J
25°C
-55°C
0.1
0.01
0.01
0.001
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.4
0.8
1.2
1.6
2
V
, BODY DIODE FORWARD VOLTAGE (V)
-V
, BODY DIODE FORWARD VOLTAGE (V)
SD
SD
Figure 21. N-Channel Body Diode Forward Voltage
Figure 22. P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature.
Variation with Current and Temperature.
2.5
1a
2
1.5
1b
1c
1
4.5"x5" FR-4 Board
TA
Still Air
= C
25o
0.5
0
0.2
0.4
0.6
0.8
1
2
2oz COPPER MOUNTING PAD AREA (in
)
Figure 23. SO-8 Single Device DC Power Dissipation versus
Copper Mounting Pad Area.
NDS8858H Rev. C
Typical Thermal Characteristics
7
6
7
6
5
4
3
2
1a
5
4
3
2
1b
1c
1a
1b
1c
4.5"x5" FR-4 Board
TA
25o
Still Air
VGS 10V
4.5"x5" FR-4 Board
TA
25o
Still Air
=
C
=
C
=
VGS
=
-10V
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
2
)
1
2
2oz COPPER MOUNTING PAD AREA (in
)
2oz COPPER MOUNTING PAD AREA (in
Figure 25. P-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
Figure 24. N-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
50
50
20
10
5
20
10
5
1
1
0.5
0.5
VGS = 10V
V GS = -10V
SINGLE PULSE
SINGLE PULSE
0.1
0.1
R
= See Note 1c
JA
R
= See Note 1c
JA
q
0.05
0.05
q
TA = 25°C
TA = 25°C
0.01
0.01
0.1
0.2
0.5
1
2
5
10
30
50
0.1
0.2
0.5
1
2
5
10
30
50
V
, DRAIN-SOURCE VOLTAGE (V)
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 27. P-Ch Maximum Safe Operating
Figure 26. N-Ch Maximum Safe Operating
Area.
Area.
1
D = 0.5
0.5
0.2
0.2
0.1
R
(t) = r(t) * R
JA
q
JA
q
R
= See Note 1c
0.1
JA
q
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t1
Single Pulse
t2
0.005
T
- T = P * R
(t)
J
JA
A
q
Duty Cycle, D = t / t 2
1
0.002
0.001
0.0001
0.001
0.01
0.1
1
1
10
100
300
t , TIME (sec)
Figure 28. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDS8858H Rev. C
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
ELECTROSTATIC
SENSITIVE DEVICES
DO NO
T
S
M
HI
P
OR
S
TO
RE
N
E
AR
S
T
RO NG
E
L
E
CTROS
T
ATIC
made from dissipative (carbon filled) polycarbonate
a
E
L
E
CTRO
AGN
E
TI
C,
M
AG NE
T
IC
O
R R ADIO ACTIVE FI ELD S
TNR DATE
PT NUMB E
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
R
PEEL STRENGTH MIN ______________gms
MAX _____________gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside
comes in different sizes depending on the number of parts
shipped.
a barcode labeled shipping box which
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
F
NDS
9959
852
Customized
Label
F
F
F
F
Pin 1
SOIC (8lds) Packaging Information
Standard
L86Z
F011
D84Z
Packaging Option
(no flow code)
SOIC-8 Unit Orientation
Packaging type
TNR
2,500
Rail/Tube
TNR
4,000
TNR
500
Qty per Reel/Tube/Bag
Reel Size
95
-
13" Dia
13" Dia
7" Dia
Box Dimension (mm)
Max qty per Box
343x64x343 530x130x83 343x64x343 184x187x47
5,000
0.0774
0.6060
30,000
0.0774
-
8,000
0.0774
0.9696
1,000
0.0774
0.1182
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
ESD Label
F63TN Label
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
640mm minimum or
80 empty pockets
1680mm minimum or
210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
0.450
+/-
0.150
(8lds)
SOIC
(12mm)
6.50
+/-0.10
5.30
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.1
+/-0.10
9.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
12mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
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Preliminary
First Production
This datasheet contains preliminary data, and
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