NDS9925AF011 [FAIRCHILD]
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8;
| 型号： | NDS9925AF011 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 1998
NDS9925A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
4.5 A, 20 V. RDS(ON) = 0.060 W @ VGS = 4.5 V
RDS(ON) = 0.075 W @ VGS = 2.7 V.
High density cell design for extremely low RDS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SuperSOTTM-6
SOT-223
SOIC-16
SuperSOTTM-8
SO-8
SOT-23
D2
D2
5
6
7
8
4
D1
D1
3
2
G2
S2
1
G1
pin 1
SO-8
S1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
NDS9925A
Units
V
Drain-Source Voltage
Gate-Source Voltage
20
±8
V
Drain Current
- Continuous
- Pulsed
(Note 1a)
4.5
A
15
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
1.6
W
(Note 1a)
(Note 1b)
(Note 1c)
1
0.9
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
78
40
°C/W
°C/W
(Note 1)
NDS9925A Rev. A
© 1998 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS= 0 V
20
V
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
1
µA
nA
nA
IGSSF
IGSSR
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 4.5 V, ID = 4.5 A
VGS = 2.7 V, ID = 4 A
VGS = 4.5 V, VDS = 5 V
0.4
15
1
V
RDS(ON)
Static Drain-Source On-Resistance
0.06
0.075
W
ID(on)
On-State Drain Current
A
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
1.3
1.2
A
V
VSD
VGS = 0 V, IS = 1.3 A (Note 2)
Notes :
1. Rq is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rq is
JA
JC
guaranteed by design while RqCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9925A Rev. A
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
ELECTROSTATIC
SENSITIVE DEVICES
DO NO
ELECTRO
T
SHI
P
OR STO
RE
N
E
AR STRO NG ELECTROS
T
FI
ATIC
ELD S
made from dissipative (carbon filled) polycarbonate
a
M
AGN
E
TI
C,
M
AG NETIC
O
R
R
ADIO ACTIVE
TNR DATE
PT NUMB E
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
R
PEEL STRENGTH MIN ______________gms
MAX _____________gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside
comes in different sizes depending on the number of parts
shipped.
a barcode labeled shipping box which
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
F
NDS
9959
852
Customized
Label
F
F
F
F
Pin 1
SOIC (8lds) Packaging Information
Standard
L86Z
F011
D84Z
Packaging Option
(no flow code)
SOIC-8 Unit Orientation
Packaging type
TNR
2,500
Rail/Tube
TNR
4,000
TNR
500
Qty per Reel/Tube/Bag
Reel Size
95
-
13" Dia
13" Dia
7" Dia
Box Dimension (mm)
Max qty per Box
343x64x343 530x130x83 343x64x343 184x187x47
5,000
0.0774
0.6060
30,000
0.0774
-
8,000
0.0774
0.9696
1,000
0.0774
0.1182
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
ESD Label
F63TN Label
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
640mm minimum or
80 empty pockets
1680mm minimum or
210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
0.450
+/-
0.150
(8lds)
SOIC
(12mm)
6.50
+/-0.10
5.30
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.1
+/-0.10
9.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
12mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
TinyLogic™
UHC™
VCX™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
相关型号：
NDS9925AL86Z
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
NDS9925AL99Z
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
NDS9925AS62Z
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
NDS9925A_NL
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOIC-8
FAIRCHILD
NDS9933AD84Z
Power Field-Effect Transistor, 2.8A I(D), 20V, 0.14ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明