NDT2955(J23Z) [FAIRCHILD]
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 ; 晶体管| MOSFET | P沟道| 60V V（ BR ） DSS | 2.5AI （D ） | SOT- 223\n
| 型号： | NDT2955(J23Z) |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223
|
| 文件： | 总6页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 1996
NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and DC motor control.
-2.5A, -60V. RDS(ON) = 0.3W @ VGS = -10V.
High density cell design for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
_______________________________________________________________________________________________________
D
D
D
S
S
G
G
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol Parameter
NDT2955
-60
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
V
V
A
±20
Drain Current
- Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
-2.5
-15
3
W
PD
1.3
(Note 1b)
(Note 1c)
1.1
TJ,TSTG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
R
JA
q
Thermal Resistance, Junction-to-Case
R
JC
q
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT2955 Rev. B2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -60 V, VGS = 0 V
-60
V
Zero Gate Voltage Drain Current
-10
µA
TJ = 125oC
-100
100
µA
nA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
IGSSF
IGSSR
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
-2
-2.4
-2
-4
V
VGS(th)
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -2.5 A
TJ = 125oC
TJ = 125oC
-0.8
-2.6
0.3
Static Drain-Source On-Resistance
0.21
0.3
RDS(ON)
W
0.45
0.5
VGS = -4.5 V, ID = -2 A
VGS = -10 V, VDS = -5 V
VDS = -10 V, ID = -2.5 A
0.36
On-State Drain Current
-12
A
S
ID(on)
gFS
Forward Transconductance
3.5
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
570
140
40
pF
Output Capacitance
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
8
20
20
5
15
40
40
20
25
5
ns
tD(on)
tr
tD(off)
tf
VDD = -30 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 W
ns
ns
ns
Qg
Qgs
Qgd
VDS = -30 V,
ID = -2.5 A, VGS = -10 V
16
2
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
4
8
NDT2955 Rev. B2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max Units
IS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
-2.3
-1.3
A
V
VSD
VGS = 0 V, IS = -2.5 A (Note2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T
J- T
TJ- T
A
PD
=
=
(t)
R
q
= I2 (t) ´ RDS(ON
A
( )
t
)
T
J
D
R
+R (t)
qJ
A
q
CA
J
C
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.
c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.
1c
1b
1a
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT2955 Rev. B2
Typical Electrical Characteristics
3
2.5
2
-12
VGS = -10V
-8.0
VGS = -4.0V
-7.0
-4.5
-6.0
-5.0
-9
-6
-3
0
-5.5
-5.5
-6.0
-5.0
1.5
1
-4.5
-7.0
-8.0
-4.0
-3.5
-10
0.5
0
-1
-2
-3
-4
-5
-6
0
-3
-6
-9
-12
-15
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
1.6
3
2
1
0
VGS = -10 V
ID = -2.5A
1.4
V GS = -10V
T
= 125°C
25°C
1.2
1
J
-55°C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
-3
-6
-9
-12
-15
T
, JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
J
D
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
-10
-8
-6
-4
-2
0
1.2
T
= -55°C
VDS = -10V
J
25°C
VDS = VGS
125°C
1.1
1
I D = -250µA
0.9
0.8
0.7
-2
-3
V
-4
-5
-6
-7
-50
-25
0
25
50
75
100
125
150
, GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCTION TEMPERATURE (°C)
J
Figure 5. Drain Current Variation with Gate
Figure 6. Gate Threshold Variation with
Temperature.
Voltage and Temperature.
NDT2955 Rev. B2
Typical Electrical Characteristics (continued)
1.15
10
5
VGS = 0V
125°C
I D = -250µA
1.1
1
0.5
25°C
1.05
1
T
= -55°C
J
0.1
0.01
0.95
0.9
0.001
-50
-25
0
25
50
75
100
125
150
-0.3
-0.6
V
-0.9
-1.2
-1.5
-1.8
-2.1
T
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
1000
500
10
VDS = -10V
C
iss
IDS = -2.5A
-30V
-20V
8
6
4
2
0
300
200
C
oss
100
50
C
rss
f = 1 MHz
VGS = 0V
30
20
0
5
10
15
20
0.1
0.2
0.5
DS
1
2
5
10
20
50
Q
, GATE CHARGE (nC)
-V
, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
-VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
90%
VIN
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
DUT
G
V
50%
50%
IN
S
10%
INVERTED
PULSE WIDTH
Figure 12. Switching Waveforms.
Figure 11. Switching Test Circuit.
NDT2955 Rev. B2
Typical Electrical Characteristics (continued)
6
20
10
5
T
= -55°C
25°C
VDS = -15V
J
2
1
4
2
0
125°C
0.5
V GS = -10V
0.1
SINGLE PULSE
R
JA = 42 o C/W
0.05
q
TA = 25°C
0.01
0
-2
-4
-6
-8
-10
0.1
0.2
0.5
- V
1
2
5
10
60 100
I
, DRAIN CURRENT (A)
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. Maximum Safe Operating Area.
1
0.5
D = 0.5
0.2
0.2
0.1
R
(t) = r(t) * R
JA
JA
q
q
0.1
R
= See Note 1 c
JA
q
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t1
t2
0.005
T
- T = P * R
(t)
J
A
JA
Single Pulse
q
Duty Cycle, D = t1 / t2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 15. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDT2955 Rev. B2
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